Infineon Technologies IPG20N06S415ATMA2

Overview

IPG20N06S415ATMA2 from Infineon Technologies is a dual-channel AEC-Q101-qualified N-channel enhancement-mode MOSFET in PG-TDSON-8 package, rated for 60 V V_DS, 20 A continuous drain current per channel at T_C = 25 °C, and 15.5 mΩ R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is fully avalanche-tested (E_AS = 90 mJ), targeting automotive powertrain and body control modules.

For engineers reviewing the IPG20N06S415ATMA2 datasheet, IPG20N06S415ATMA2 pinout, IPG20N06S415ATMA2 application, or IPG20N06S415ATMA2 equivalent, key selection criteria include its dual-channel layout, 3 K/W R_thJC, 100% avalanche ruggedness, integrated body diode with t_rr = 35 ns, and MSL1 reflow compatibility - all critical for high-reliability 12 V/24 V automotive switching.

Technical Context

This device implements two independent OptiMOS™-T2 silicon dies in a single thermally optimized PG-TDSON-8 package with exposed drain pad. Each channel supports 60 V blocking, 20 A DC current, and exhibits low gate charge (Q_g = 22–29 nC) and fast switching (t_r = 2 ns, t_f = 9 ns) under standard 10 V drive.

Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the integrated Schottky-like body diode delivers V_SD = 0.95–1.3 V at I_F = 17 A and t_rr = 35 ns - essential for synchronous rectification and freewheeling in DC-DC converters and motor drivers.

Key Specifications

Pinout & Package

IPG20N06S415ATMA2 uses the PG-TDSON-8 package (3.3 mm × 3.3 mm × 0.85 mm), featuring an exposed drain pad on the bottom side for thermal and electrical connection. The top-side pins are arranged in two symmetrical 4-pin groups (1–4 and 5–8), each serving one N-channel channel.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel automotive MOSFET applications.

Compared with IPB20N06S4-15 and IRF7832TRPBF, IPG20N06S415ATMA2 uniquely delivers dual-channel functionality, AEC-Q101 compliance, 175 °C operation, and 3 K/W R_thJC in a compact 3.3 mm × 3.3 mm footprint - making it the only option for space-constrained, high-temperature automotive power switches requiring functional integration and reliability validation.

Availability

IPG20N06S415ATMA2 is available at Aetrix Electronics and suitable for automotive body control modules, electric power steering subsystems, and 12 V DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPG20N06S415ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-reliability 12 V/24 V automotive power switching applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IPG20N06S415ATMA2?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of −10 V to +10 V. Exceeding ±20 V risks permanent gate oxide damage. Drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching transitions, especially in high-dV/dt environments like motor drives.

How is thermal performance validated for this dual-channel MOSFET?

Thermal resistance is specified as R_thJC = 3 K/W (junction-to-case), measured with the device mounted on a 40 mm × 40 mm FR4 PCB with 6 cm² copper area for the drain pad. This value assumes vertical mounting in still air and is validated per JEDEC JESD51-2. No R_thJA is guaranteed due to PCB dependency.

Does IPG20N06S415ATMA2 support paralleling of channels for higher current?

No - the two channels share a common drain pad and are not electrically isolated. They are designed for independent source/gate control but cannot be paralleled to increase current capacity beyond 20 A per channel. Attempting to force current sharing may cause thermal imbalance and premature failure.

What is the significance of the "4N0615" marking on the device top?

"4N0615" is the package-specific marking code indicating the IPG20N06S4-15 variant in PG-TDSON-8 package. It encodes the voltage rating (06 = 60 V), current capability (20 = 20 A), technology generation (S4 = OptiMOS™-T2), and R_DS(on) grade (15 = 15.5 mΩ max). This code matches Infineon's internal traceability and reel labeling standards.