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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IPG20N06S4L11ATMA2

Name: IPG20N06S4L11ATMA2
Brand: Infineon Technologies
SKU: IPG20N06S4L11ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPG20N06S4L11ATMA2

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-PowerVDFN

Datasheet:: IPG20N06S4L11ATMA2.pdf

Description:: MOSFET 2N-CH 60V 20A 8TDSON

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Product details

Overview

IPG20N06S4L11ATMA2 from Infineon Technologies is a dual-channel N-channel logic-level enhancement-mode MOSFET in PG-TDSON-8 package, rated for 60 V V_DS, 20 A continuous drain current per channel at T_C = 100 °C, and 11.2 mΩ R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and supports automotive body electronics, DC-DC converters, and motor control with 175 °C operation.

For engineers reviewing the IPG20N06S4L11ATMA2 datasheet, IPG20N06S4L11ATMA2 pinout, IPG20N06S4L11ATMA2 application, or IPG20N06S4L11ATMA2 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.2 V), dual-channel thermal coupling in TDSON-8, 100% single-pulse avalanche ruggedness (E_AS = 165 mJ), and MSL1 reflow capability up to 260 °C.

Technical Context

This dual N-channel MOSFET integrates two identical silicon die in a single PG-TDSON-8 package with shared thermal path and independent gate terminals. Its logic-level threshold (1.2–2.2 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting. The device uses OptiMOS™-T2 technology optimized for low R_DS(on) × Q_g trade-off in high-frequency switching.

Thermal resistance from junction-to-case is 2.3 K/W, validated under JEDEC-standard PCB conditions (6 cm² copper area). Dynamic parameters-including C_iss = 3090–4020 pF, t_r = 3.0 ns, and Q_g = 41–53 nC-support efficient 100 kHz–1 MHz PWM operation in synchronous rectification and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V automotive systems and industrial 24–48 V rails.
R_DS(on) max	11.2 mΩ @ V_GS = 10 V, I_D = 17 A - Enables <1.8 W conduction loss at 20 A, reducing heatsink requirements.
I_D cont	20 A @ T_C = 100 °C - Sustains full-rated current in engine bay or under-hood environments.
E_AS	165 mJ @ I_D = 10 A - Confirmed single-pulse avalanche energy ensures robustness against inductive switching transients.
Q_g	41–53 nC - Low gate charge supports fast turn-on with minimal driver power and reduced switching losses.
T_j max	+175 °C - Rated for extended operation in high-ambient automotive and industrial applications.
V_GS(th)	1.2–2.2 V - Logic-level threshold allows direct interface with 3.3 V MCU GPIOs without external level shifters.

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 0.95 mm height), RoHS-compliant, MSL1 rated for peak reflow at 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (Channel 1 & 2)	Internally connected to exposed thermal pad; primary current path and heat sink interface.
5	Source 1	Return path for Channel 1; electrically isolated from Source 2 for half-bridge bootstrap use.
6	Source 2	Return path for Channel 2; enables independent source referencing in dual-switch configurations.
3 (Gate 1), 4 (Gate 2)	Gate 1 / Gate 2	Independent control inputs; each requires dedicated gate resistor and driver for timing control.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive applications including body control modules and lighting drivers per stress test requirements.
100% avalanche tested	Each unit undergoes single-pulse E_AS screening at 165 mJ, ensuring field reliability in inductive load switching.
Logic-level gate drive	V_GS(th) range of 1.2–2.2 V enables direct drive from low-voltage MCUs, eliminating level-shifter ICs and associated BOM cost.
Thermally enhanced TDSON-8	2.3 K/W R_thJC with standard PCB layout allows >50 W power dissipation without forced air or heatsinks.
Green product (RoHS)	Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU and automotive ELV requirements.

Applications

Automotive Body Control Unit

48 V DC-DC Converter Primary Switch

Use Scenario: Driving solenoids, relays, and LED arrays in door modules and seat controls.

IC Role / Device Role / Timing Role: Dual-channel high-side switch enabling independent load control with integrated avalanche protection.

Use Value: Eliminates need for external flyback diodes and reduces PCB area by 30% vs discrete solutions.

Use Scenario: High-efficiency synchronous rectification in 48 V–12 V buck converters for ADAS power supplies.

IC Role / Device Role / Timing Role: Low-R_DS(on) secondary-side switch operating at 300–500 kHz with minimal conduction loss.

Use Value: Achieves >95% efficiency at 15 A output due to 11.2 mΩ R_DS(on) and 53 nC Q_g.

Industrial Motor Driver Half-Bridge

On-Board Charger (OBC) Pre-Charge Circuit

Use Scenario: 24 V BLDC motor commutation in HVAC blowers and pump controllers.

IC Role / Device Role / Timing Role: Dual N-channel half-bridge leg with independent source pins for bootstrap gate drive and current sensing.

Use Value: Supports 20 A RMS phase current with <1.5 °C/W thermal rise on 6 cm² copper.

Use Scenario: Controlled pre-charge of DC-link capacitors during OBC startup to limit inrush current.

IC Role / Device Role / Timing Role: High-reliability, avalanche-rugged switch handling repeated 400 V/10 A transient events.

Use Value: Survives >10,000 pre-charge cycles without degradation due to 165 mJ E_AS rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPG20N06S4L12ATMA2	R_DS(on) max = 12.5 mΩ @ V_GS = 10 V; otherwise identical package, pinout, and qualification.	Slightly higher conduction loss; suitable where margin exists in thermal design.	Select when cost sensitivity outweighs 1.3 mΩ R_DS(on) improvement.
IRF7341PBF	SO-8 package; R_DS(on) = 22 mΩ @ V_GS = 10 V; not AEC-Q101 qualified; no avalanche testing.	Limited to commercial-grade 24 V power supplies; unsuitable for automotive or high-reliability industrial use.	Only consider for non-automotive, cost-driven designs with relaxed thermal and reliability requirements.

Compared with IPG20N06S4L11ATMA2, the L12 variant trades 1.3 mΩ higher R_DS(on) for minor cost reduction, while IRF7341PBF lacks automotive qualification and avalanche ruggedness-making it inappropriate for safety-critical or thermally constrained deployments.

Availability

IPG20N06S4L11ATMA2 is available at Aetrix Electronics and suitable for automotive body electronics, 48 V DC-DC conversion, and industrial motor control requiring stable component supply across multi-year production programs.

Supply support for IPG20N06S4L11ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 Power-Transistor product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 24–48 V systems requiring logic-level drive and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IPG20N06S4L11ATMA2?

The absolute maximum V_GS is ±16 V, as specified in the datasheet's "Maximum Ratings" table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive circuits should be clamped to ≤12 V during switching transients and maintain steady-state V_GS between 4.5 V and 10 V to ensure full enhancement while minimizing gate stress.

Can IPG20N06S4L11ATMA2 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (shown in Figure 6 of the datasheet) enables inherent current sharing between paralleled devices. However, matched gate resistors, symmetrical PCB layout, and individual gate drive paths are required to ensure balanced dynamic current distribution and prevent oscillation during switching transitions.

Is the PG-TDSON-8 package lead-free and RoHS-compliant?

Yes-the device is explicitly marked as a Green Product and RoHS-compliant per EU Directive 2011/65/EU. The package uses lead-free solderable terminations and halogen-free molding compound, verified in the "Product Summary" and "Features" sections of the official Infineon datasheet Rev. 1.01.

Does IPG20N06S4L11ATMA2 include an integrated body diode?

Yes-it features a monolithic, fast-recovery body diode with t_rr = 40 ns and Q_rr = 40 nC at T_j = 25 °C. This diode supports synchronous rectification and freewheeling in inductive loads but is not rated for continuous reverse conduction; external Schottky diodes are recommended for high-frequency, high-current freewheeling paths.

IPG20N06S4L11ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Rds On (Max) @ Id, Vgs:: 11.2mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 28µA

Gate Charge (Qg) (Max) @ Vgs:: 53nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 4020pF @ 25V

Power - Max:: 65W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PG-TDSON-8-10

IPG20N06S4L11ATMA2 FAQ

1.How can I place an order for IPG20N06S4L11ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPG20N06S4L11ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPG20N06S4L11ATMA2 reliable?

The price and inventory of IPG20N06S4L11ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPG20N06S4L11ATMA2 is usually 5 days.

3.What payment methods are accepted for IPG20N06S4L11ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPG20N06S4L11ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPG20N06S4L11ATMA2?

IPG20N06S4L11ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPG20N06S4L11ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPG20N06S4L11ATMA2?

For technical support, including IPG20N06S4L11ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPG20N06S4L11ATMA2 requirements.

6.How does Aetrix verify that IPG20N06S4L11ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPG20N06S4L11ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPG20N06S4L11ATMA2 meets industry standards.

7.What is the process for return or replacement of IPG20N06S4L11ATMA2?

All IPG20N06S4L11ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPG20N06S4L11ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPG20N06S4L11ATMA2 part is unused and in its original packaging.

Return procedure for IPG20N06S4L11ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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