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Infineon Technologies IPG20N06S4L14ATMA2

Part No.:
IPG20N06S4L14ATMA2
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-PowerVDFN
Datasheet:
AetrixIPG20N06S4L14ATMA2.pdf
Description:
MOSFET 2N-CH 60V 20A 8TDSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,950

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Product details

Overview

IPG20N06S4L14ATMA2 from Infineon Technologies is a dual-channel N-channel logic-level enhancement-mode MOSFET with 60 V VDS, 13.7 mΩ RDS(on) at VGS = 10 V and ID = 17 A, AEC-Q101 qualified, and rated for 175 °C operation - used in automotive DC-DC converters, motor control half-bridges, and high-efficiency power supplies.

For engineers reviewing the IPG20N06S4L14ATMA2 datasheet, IPG20N06S4L14ATMA2 pinout, IPG20N06S4L14ATMA2 application, or IPG20N06S4L14ATMA2 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.2–2.2 V), avalanche ruggedness (EAS = 90 mJ), thermal resistance (RthJC = 3 K/W), and dual-channel integration for space-constrained half-bridge layouts.

Technical Context

This OptiMOS™-T2 device integrates two identical N-channel MOSFETs in a single PG-TDSON-8 package, enabling synchronous rectification or half-bridge topologies without external matching. Its low RDS(on) and optimized gate charge (Qg = 30–39 nC) support high-frequency switching up to 1 MHz in automotive-grade SMPS.

The MOSFET features robust body diode performance (trr = 35 ns, Qrr = 35 nC) and 100% single-pulse avalanche testing - critical for inductive load commutation in 12 V/48 V vehicle subsystems where voltage transients exceed 60 V.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - supports 48 V automotive bus with 20 % transient margin
RDS(on) max13.7 mΩ at VGS = 10 V, ID = 17 A - enables ≤2.3 W conduction loss at 20 A
ID continuous20 A per channel at TC = 25 °C - limited by bondwire, not die thermal limit
EAS90 mJ at ID = 10 A - withstands inductive energy spikes without failure
Qg30–39 nC - determines gate driver current requirement (~3.9 A peak for 10 ns rise)
tr/tf2.0 ns / 15 ns - enables fast switching with reduced overlap loss in hard-switched converters
VGS(th)1.2–2.2 V - ensures full enhancement with 3.3 V or 5 V logic-level microcontrollers

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, MSL1 rated to 260 °C).

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4Source (Channel 1)Low-side return path for first MOSFET; internally paralleled for current sharing
5, 6, 7, 8Source (Channel 2)Independent source node for second MOSFET - enables floating high-side drive in half-bridge
Drain (exposed pad)Common DrainThermally and electrically connected to both channels; requires PCB copper pour for heat dissipation
Gate 1 (Pin 1)Control Input (Ch1)Logic-level compatible; threshold defined at 20 µA ID; no level-shifting needed
Gate 2 (Pin 8)Control Input (Ch2)Electrically isolated gate terminal - allows independent timing control of each channel

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications per stress test requirements
175 °C operating temperatureEnables placement near hot components (e.g., inverters, DC-DC inductors) without derating
100 % avalanche testedGuarantees single-pulse ruggedness under unclamped inductive switching conditions
Logic-level gate driveOperates fully enhanced with standard MCU GPIO (3.3 V/5 V), eliminating gate driver ICs
Green Product (RoHS)Lead-free, halogen-free, compliant with EU Directive 2011/65/EU and IPC-1752A

Applications

Automotive DC-DC ConvertersBrushless DC Motor Control

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Dual N-channel switch implementing synchronous rectification and high-side switching in interleaved topology.

Use Value: Low RDS(on) and fast tr/tf reduce conduction and switching losses, achieving >96 % efficiency at 5 kW.

Use Scenario: 3-phase inverter driving HVAC blower or EPS assist motor in passenger cars.

IC Role / Device Role / Timing Role: Half-bridge leg (high- and low-side) per phase, leveraging dual-channel integration to minimize layout area.

Use Value: Matched channel parameters and shared thermal path ensure balanced current sharing and thermal stability across PWM cycles.

On-Board Charger (OBC) Auxiliary SuppliesIndustrial 24 V Power Distribution

Use Scenario: Isolated auxiliary supply (12 V/5 V) powered from OBC high-voltage DC link.

IC Role / Device Role / Timing Role: Primary-side active clamp switch and synchronous rectifier in resonant LLC stage.

Use Value: Avalanche rating and low Qgd enable reliable zero-voltage switching (ZVS) over full load range and temperature.

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Load switch with integrated protection - controlled via industrial I/O interface (24 V logic).

Use Value: Logic-level gate and 175 °C rating allow direct drive from PLC FPGA outputs and operation in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPG20N06S4L12ATMA2RDS(on) = 12.5 mΩ max at VGS = 10 V - lower conduction loss but higher Qg (42 nC)Better for low-frequency, high-current apps; less suitable for >500 kHz switching due to increased gate drive lossSelect when thermal budget is tighter than switching frequency constraints
IRF7341TRPBFSingle-die dual N-channel, 55 V VDS, RDS(on) = 26 mΩ - higher on-resistance, no AEC-Q101 or avalanche testLimited to industrial/commercial use; unsuitable for automotive safety-critical systemsAcceptable only for cost-sensitive non-automotive designs with relaxed reliability requirements

Compared with IPG20N06S4L14ATMA2, the IPG20N06S4L12ATMA2 offers lower RDS(on) at the expense of higher gate charge and reduced switching speed, while the IRF7341TRPBF lacks automotive qualification and avalanche ruggedness - making the original part uniquely suited for AEC-Q101-compliant high-reliability power conversion.

Availability

IPG20N06S4L14ATMA2 is available at Aetrix Electronics and suitable for automotive DC-DC converters, brushless motor inverters, and on-board charger auxiliary supplies requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPG20N06S4L14ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability automotive power conversion where logic-level drive, thermal resilience, and transient robustness are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPG20N06S4L14ATMA2?

The absolute maximum VGS is ±16 V, per the datasheet's "Maximum ratings" table. Operation beyond this risks irreversible gate oxide damage. Recommended gate drive is 0 V to 10 V for full enhancement and safe margin; 12 V is permissible but reduces long-term reliability due to increased gate leakage acceleration.

Can IPG20N06S4L14ATMA2 be used in a high-side configuration with bootstrap gate drive?

Yes - its logic-level VGS(th) (1.2–2.2 V) and robust dV/dt immunity (specified in application notes for OptiMOS™-T2) support reliable bootstrap operation in half-bridge configurations up to 200 kHz. The dual-channel isolation allows independent gate routing, minimizing coupling during high dv/dt transitions.

Is the exposed drain pad electrically connected to both channels?

Yes - the bottom-exposed thermal pad is internally connected to the drain terminals of both MOSFETs. It must be soldered to a large PCB copper pour tied to system ground or the high-voltage rail, depending on topology, to ensure thermal performance and electrical integrity.

Does IPG20N06S4L14ATMA2 require external gate resistors for EMI control?

Yes - although not mandatory for functionality, a 5–10 Ω series gate resistor is recommended to dampen ringing caused by parasitic Lg/Ciss resonance. This improves EMI compliance and reduces gate driver stress, especially in high-current, high-dv/dt applications like motor drives.

IPG20N06S4L14ATMA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
20A
Rds On (Max) @ Id, Vgs:
13.7mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:
39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2890pF @ 25V
Power - Max:
50W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-4

IPG20N06S4L14ATMA2 FAQ

1.How can I place an order for IPG20N06S4L14ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPG20N06S4L14ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPG20N06S4L14ATMA2 reliable?

The price and inventory of IPG20N06S4L14ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPG20N06S4L14ATMA2 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPG20N06S4L14ATMA2 transactions.

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IPG20N06S4L14ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPG20N06S4L14ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPG20N06S4L14ATMA2?

For technical support, including IPG20N06S4L14ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPG20N06S4L14ATMA2 requirements.

6.How does Aetrix verify that IPG20N06S4L14ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPG20N06S4L14ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPG20N06S4L14ATMA2 meets industry standards.

7.What is the process for return or replacement of IPG20N06S4L14ATMA2?

All IPG20N06S4L14ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPG20N06S4L14ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPG20N06S4L14ATMA2 part is unused and in its original packaging.

Return procedure for IPG20N06S4L14ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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