Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPG20N06S4L26ATMA1

Part No.:
IPG20N06S4L26ATMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-PowerVDFN
Datasheet:
AetrixIPG20N06S4L26ATMA1.pdf
Description:
MOSFET 2N-CH 60V 20A 8TDSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:16,128

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPG20N06S4L26ATMA1 from Infineon Technologies is a dual-channel N-channel logic-level enhancement-mode MOSFET with 60 V VDS, 20 A continuous drain current (TC = 25 °C), and 26 mΩ maximum RDS(on) at VGS = 10 V. It is AEC-Q101 qualified, rated for 175 °C operation, and housed in PG-TDSON-8 package - designed for automotive DC-DC converters, motor control H-bridges, and high-efficiency power switches.

For engineers reviewing the IPG20N06S4L26ATMA1 datasheet, IPG20N06S4L26ATMA1 pinout, IPG20N06S4L26ATMA1 application, or IPG20N06S4L26ATMA1 equivalent, key selection criteria include its dual-channel layout, 4.5 K/W RthJC, 100% avalanche-tested ruggedness, and logic-level gate drive compatibility down to 4.5 V.

Technical Context

This OptiMOS™-T2 device integrates two identical N-channel MOSFETs in a single PG-TDSON-8 package with shared thermal path and independent gate terminals. Its low RDS(on) and optimized gate charge (Qg = 15–20 nC) enable high-frequency switching in synchronous rectification and half-bridge topologies.

The MOSFET features a robust body diode with trr = 33 ns and Qrr = 30 nC at Tj = 25 °C, supporting fast recovery in flyback and LLC resonant converters. Its ±16 V VGS rating and 1.2–2.2 V VGS(th) ensure stable turn-on under noisy automotive supply conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - supports 48 V automotive systems with margin against load dump transients
RDS(on) max26 mΩ @ VGS = 10 V - enables <1.3 W conduction loss at 20 A in single channel
ID cont20 A @ TC = 25 °C - limited by bondwire; usable up to 18 A at 100 °C case temperature
EAS35 mJ @ ID = 10 A - ensures reliable unclamped inductive switching in motor drives
Qg15–20 nC - balances switching speed and gate driver power requirements in 100–500 kHz designs
tr/tf1.5 ns / 10 ns - supports fast edge rates while limiting EMI in compact power stages
RthJC4.5 K/W - allows direct heatsinking via exposed drain pad for thermal management

Pinout & Package

IPG20N06S4L26ATMA1 uses the PG-TDSON-8 (also known as TDSON-8 or LFPAK 56) surface-mount package with exposed drain pad for thermal performance. Pin numbering follows standard top-view orientation: pins 1–4 on left side, 5–8 on right side, with pin 1 marked by notch or dot.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4Source 1 / Drain 1 (shared pad)Pins 1–4 are internally connected to Source 1; drain pad (underside) connects to Drain 1
5, 6, 7, 8Source 2 / Drain 2 (shared pad)Pins 5–8 are internally connected to Source 2; second drain pad (underside) connects to Drain 2
Gate 1 (pin 1)Control terminal for Channel 1Independent gate input; requires separate gate resistor and driver path
Gate 2 (pin 5)Control terminal for Channel 2Independent gate input; enables asynchronous or complementary switching control

Key Features

FeatureDesign Value
Dual N-channel integrationTwo matched MOSFETs in one PG-TDSON-8 package reduce PCB area and interconnect inverter/H-bridge layouts
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications per stress test requirements
Logic-level gate driveGuaranteed turn-on at VGS ≥ 4.5 V - compatible with 5 V microcontrollers and automotive MCUs without level-shifting
100% avalanche testedEach unit passes single-pulse EAS screening - critical for reliability in inductive load switching
MSL1 reflow ratingSuitable for lead-free reflow up to 260 °C peak - eliminates moisture sensitivity concerns in SMT assembly

Applications

Automotive DC-DC ConvertersBrushless DC Motor Control

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Dual-channel synchronous switch enabling high-efficiency power transfer with interleaved phase control.

Use Value: 26 mΩ RDS(on) and 4.5 K/W RthJC minimize conduction loss and thermal derating at 15 A continuous output.

Use Scenario: 3-phase inverter driving 400 W BLDC fan in engine cooling module.

IC Role / Device Role / Timing Role: Half-bridge upper/lower switch pair per phase, operating at 20 kHz PWM frequency.

Use Value: Fast 1.5 ns rise time and low Qgd (1.7–3.4 nC) reduce switching losses and improve gate drive efficiency.

On-Board Charger (OBC) Auxiliary SuppliesIndustrial Power Tools

Use Scenario: Isolated auxiliary 12 V supply using active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier and clamp switch in dual-active-bridge configuration.

Use Value: Body diode trr = 33 ns and Qrr = 30 nC prevent voltage spikes during zero-voltage switching transitions.

Use Scenario: 18 V battery-powered cordless drill with integrated motor driver IC.

IC Role / Device Role / Timing Role: High-side/low-side switch in half-bridge gate driver stage controlling brushed motor direction and braking.

Use Value: AEC-Q101 qualification and 175 °C Tj rating ensure robustness under sustained stall-current conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPG20N06S4L30ATMA1RDS(on) max = 30 mΩ @ VGS = 10 V; otherwise identical package, pinout, and qualificationHigher conduction loss - suitable where thermal margin exists but cost is prioritizedSelect when system efficiency target permits ~15% higher I²R loss at full load
IRFH7107TRPBFSingle-channel 60 V MOSFET (SO-8); RDS(on) = 29 mΩ; no AEC-Q101 qualificationLacks dual-channel integration and automotive qualification - limited to industrial/commercial useChoose only for non-automotive designs requiring SO-8 footprint and lower gate charge (Qg = 12.5 nC)

Compared with IPG20N06S4L30ATMA1, this part delivers lower conduction loss and better thermal performance; versus IRFH7107TRPBF, it provides dual-channel integration and automotive-grade reliability at the cost of higher gate charge and larger footprint.

Availability

IPG20N06S4L26ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, BLDC motor inverters, and industrial power tools requiring stable component supply across extended temperature and lifecycle demands.

Supply support for IPG20N06S4L26ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability automotive power conversion where dual-channel integration, avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The absolute maximum junction temperature is +175 °C. At TC = 100 °C, the continuous drain current drops to 18 A due to thermal derating - confirmed by the ID vs. TC curve on page 4 of the datasheet. This reflects actual silicon capability, not package limitation.

Is the body diode suitable for synchronous rectification in flyback converters?

Yes - the body diode has trr = 33 ns and Qrr = 30 nC at 25 °C, enabling clean commutation in 100–300 kHz flyback designs. Its soft recovery characteristic minimizes voltage overshoot when paired with proper snubbing and gate timing.

Can both channels be paralleled to increase current capacity?

No - the two channels share no internal current-sharing mechanism and exhibit parametric mismatch. Parallel operation is not recommended. Each channel must be driven independently with matched gate resistors and layout symmetry for balanced dynamic behavior.

What is the meaning of "PG-TDSON-8" and how does it differ from standard SO-8?

PG-TDSON-8 is Infineon's designation for a thermally enhanced 8-pin surface-mount package with exposed copper drain pads on the underside. Unlike SO-8, it offers 4.5 K/W RthJC (vs. >60 K/W for SO-8), enabling >3× higher power dissipation in the same PCB area.

IPG20N06S4L26ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
20A
Rds On (Max) @ Id, Vgs:
26mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1430pF @ 25V
Power - Max:
33W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-4

IPG20N06S4L26ATMA1 FAQ

1.How can I place an order for IPG20N06S4L26ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPG20N06S4L26ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPG20N06S4L26ATMA1 reliable?

The price and inventory of IPG20N06S4L26ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPG20N06S4L26ATMA1 is usually 5 days.

3.What payment methods are accepted for IPG20N06S4L26ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPG20N06S4L26ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPG20N06S4L26ATMA1?

IPG20N06S4L26ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPG20N06S4L26ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPG20N06S4L26ATMA1?

For technical support, including IPG20N06S4L26ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPG20N06S4L26ATMA1 requirements.

6.How does Aetrix verify that IPG20N06S4L26ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPG20N06S4L26ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPG20N06S4L26ATMA1 meets industry standards.

7.What is the process for return or replacement of IPG20N06S4L26ATMA1?

All IPG20N06S4L26ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPG20N06S4L26ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPG20N06S4L26ATMA1 part is unused and in its original packaging.

Return procedure for IPG20N06S4L26ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPG20N06S4L26ATMA1 Tags

  • IPG20N06S4L26ATMA1
  • IPG20N06S4L26ATMA1 PDF
  • IPG20N06S4L26ATMA1 Datasheet
  • IPG20N06S4L26ATMA1 Specifications
  • IPG20N06S4L26ATMA1 Images
  • Infineon Technologies
  • Infineon Technologies IPG20N06S4L26ATMA1
  • Buy IPG20N06S4L26ATMA1
  • IPG20N06S4L26ATMA1 Price
  • IPG20N06S4L26ATMA1 Distributor
  • IPG20N06S4L26ATMA1 Supplier
  • IPG20N06S4L26ATMA1 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER