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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI086N10N3GXKSA1

Name: IPI086N10N3GXKSA1
Brand: Infineon Technologies
SKU: IPI086N10N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI086N10N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI086N10N3GXKSA1.pdf

Description:: MOSFET N-CH 100V 80A TO262-3

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Product details

Overview

IPI086N10N3GXKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO262-3 (IPAK) package, rated for 100 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 7.4–8.6 mΩ R_DS(on) at V_GS = 10 V / I_D = 73 A. It features 175 °C maximum junction temperature, low gate charge (Q_g = 42–55 nC), and is optimized for high-frequency switching in DC-DC converters and synchronous rectification.

For engineers reviewing the IPI086N10N3GXKSA1 datasheet, IPI086N10N3GXKSA1 pinout, IPI086N10N3GXKSA1 application, or IPI086N10N3GXKSA1 equivalent, key selection criteria include its 100 V breakdown voltage, 7.4 mΩ typical R_DS(on) at 10 V drive, 1.2 K/W R_thJC, 3980 pF C_iss, and suitability for thermally constrained industrial SMPS designs.

Technical Context

This OptiMOS™3 device uses a trench-gate silicon process to achieve low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency operation above 100 kHz. Its gate threshold voltage (V_GS(th) = 2.0–3.5 V) supports standard 10 V gate drivers while maintaining robust noise immunity.

The integrated body diode exhibits 1.0–1.2 V forward voltage at 80 A and 71 ns reverse recovery time, making it suitable for synchronous rectifier configurations where diode conduction and recovery losses must be minimized in buck converters and OR-ing circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source blocking voltage before avalanche onset.
R_DS(on) max	8.6 mΩ at V_GS = 10 V, I_D = 73 A, T_j = 25 °C - Enables <1 W conduction loss at 80 A in TO262 package with adequate heatsinking.
I_D cont	80 A at T_C = 25 °C - Supports high-current output stages in server VRMs and telecom PSUs without parallel devices.
Q_g	42–55 nC - Low total gate charge reduces driver power and enables efficient 500 kHz+ switching in hard-switched topologies.
R_thJC	1.2 K/W - Junction-to-case thermal resistance allows direct mounting to heatsink; enables 125 W P_tot dissipation at T_C = 25 °C.
E_AS	110 mJ - Single-pulse avalanche energy rating ensures ruggedness during transient overvoltage events in inductive loads.
T_j max	175 °C - Extended temperature rating supports operation in sealed enclosures or high-ambient industrial environments.

Pinout & Package

Package: PG-TO262-3 (IPAK), surface-mount variant of TO-220 with isolated tab; drain-connected tab requires insulated mounting or PCB copper area for thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node in half-bridge configurations.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <55 nC charge for full enhancement; sensitive to ESD and ringing.
Pin 3 (Drain)	Power output	Internally connected to metal tab; carries full load current and must be thermally coupled to heatsink or large copper pour.

Key Features

Feature	Design Value
N-channel normal-level logic	Operates fully enhanced with standard 10 V gate drive; no level-shifting required in low-side switch applications.
Optimized FOM (Q_g × R_DS(on))	Enables >95% efficiency in 48 V–12 V buck converters at 300–500 kHz switching frequencies.
175 °C rated junction	Supports sustained operation in ambient temperatures up to 105 °C when derated per thermal curves.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and JEDEC J-STD-20 standards for lead-free assembly and environmental compliance.

Applications

Server Voltage Regulator Modules

Telecom DC-DC Converters

Use Scenario: High-current, multiphase buck converter supplying CPU core voltage in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in 300–600 kHz phase-legs.

Use Value: 7.4 mΩ R_DS(on) and 1.2 K/W R_thJC reduce conduction loss and enable compact thermal design under 80 A per phase.

Use Scenario: Isolated 48 V–12 V intermediate bus converter in 5G base station power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or LLC resonant topology.

Use Value: 1.0–1.2 V V_SD and 71 ns t_rr minimize diode conduction loss and reverse recovery spikes during ZVS transitions.

Industrial Motor Drives

EV Onboard Chargers

Use Scenario: Inverter half-bridge stage driving 3-phase BLDC motors in HVAC compressors or pumps.

IC Role / Device Role / Timing Role: Low-side switch in 10–20 kHz PWM inverter leg with bootstrap gate drive.

Use Value: 110 mJ E_AS and 175 °C T_j ensure reliability during motor stall or short-circuit fault conditions.

Use Scenario: Primary-side switching MOSFET in AC/DC PFC stage of 3.3–6.6 kW OBC.

IC Role / Device Role / Timing Role: Fast-switching, low-R_DS(on) device in continuous conduction mode (CCM) boost converter.

Use Value: 3980 pF C_iss and 42 nC Q_g support stable 65–100 kHz operation with minimal driver loss and EMI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP086N10N3GXKSA1	PG-TO220-3 package; R_DS(on) max = 8.6 mΩ; R_thJC = 1.2 K/W	Through-hole mounting; higher mechanical robustness in vibration-prone environments	Select when board-level reliability under mechanical stress is prioritized over footprint size.
IPD082N10N3GXKSA1	PG-TO252-3 package; R_DS(on) max = 8.2 mΩ; R_thJC = 1.4 K/W	Surface-mount only; smaller footprint but higher thermal resistance than TO262	Select when PCB space is constrained and thermal margin allows 0.2 K/W higher junction-to-case resistance.

Compared with IPP086N10N3GXKSA1 and IPD082N10N3GXKSA1, IPI086N10N3GXKSA1 balances thermal performance (1.2 K/W), package flexibility (surface-mount IPAK), and proven ruggedness in high-current synchronous rectification-making it optimal for industrial SMPS where thermal density and manufacturability both matter.

Availability

IPI086N10N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPI086N10N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™3 product line, engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum gate-source voltage rating for IPI086N10N3GXKSA1?

The absolute maximum gate-source voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –5 V to +15 V for reliable turn-off and turn-on; gate drivers should include clamping or Zener protection to prevent overshoot beyond ±15 V during fast switching transients.

Does IPI086N10N3GXKSA1 have an integrated Schottky diode?

No. It contains a standard silicon body diode inherent to vertical N-channel MOSFET construction. This diode has V_SD = 1.0–1.2 V at 80 A and t_rr = 71 ns - not a Schottky structure. For lower V_F or faster recovery, external SiC or GaN co-packaged solutions are required.

Can IPI086N10N3GXKSA1 be used in avalanche mode continuously?

No. The 110 mJ E_AS rating applies only to single-pulse avalanche events. Continuous avalanche operation is not specified or guaranteed. Designers must avoid operating in the avalanche region during normal switching; snubbers or clamping circuits should limit V_DS excursions to within 100 V.

Is the drain tab electrically isolated in the PG-TO262-3 package?

No. In the PG-TO262-3 (IPAK) package, the drain is internally connected to the metal tab. Electrical isolation requires either insulating hardware (e.g., shoulder washers) or use of a dielectric thermal pad between tab and heatsink. PCB layout must assign the tab pad exclusively to the drain net.

IPI086N10N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 8.6mOhm @ 73A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 75µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3980 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI086N10N3GXKSA1 FAQ

1.How can I place an order for IPI086N10N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI086N10N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI086N10N3GXKSA1 reliable?

The price and inventory of IPI086N10N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI086N10N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPI086N10N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI086N10N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI086N10N3GXKSA1?

IPI086N10N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI086N10N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI086N10N3GXKSA1?

For technical support, including IPI086N10N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI086N10N3GXKSA1 requirements.

6.How does Aetrix verify that IPI086N10N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI086N10N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI086N10N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPI086N10N3GXKSA1?

All IPI086N10N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI086N10N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI086N10N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPI086N10N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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