Infineon Technologies IPL60R365P7AUMA1

Overview

IPL60R365P7AUMA1 from Infineon Technologies is a 600 V, 365 mΩ superjunction N-channel power MOSFET in ThinPAK 8x8 package, optimized for high-efficiency PFC and LLC resonant converters. It delivers 13 nC total gate charge, 800 A/µs body diode commutation speed, and 2.73 °C/W junction-to-case thermal resistance - enabling compact, low-loss hard- and soft-switching stages in server PSUs and telecom rectifiers.

For engineers reviewing the IPL60R365P7AUMA1 datasheet, IPL60R365P7AUMA1 pinout, IPL60R365P7AUMA1 application, or IPL60R365P7AUMA1 equivalent, key selection criteria include R_DS(on) at 150 °C (≤0.725 Ω), E_oss at 400 V (1.6 µJ), body diode dI_F/dt ruggedness (800 A/µs), and JEDEC industrial qualification - all critical for reliable high-frequency, high-voltage switching designs.

Technical Context

This CoolMOS™ P7 device implements a superjunction architecture with optimized charge balancing for simultaneous reduction of conduction and switching losses. Its gate plateau voltage is 5.2 V, and it features a low 6.2 Ω gate resistance, enabling precise turn-on/turn-off timing control under 13 V gate drive.

The MOSFET supports both unidirectional hard-switched PWM and bidirectional resonant operation due to its robust 27 mJ single-pulse avalanche energy rating and 50 V/ns reverse diode dv/dt capability. Its 0.9 V body diode forward voltage at 2.7 A and 145 ns reverse recovery time further support efficient synchronous rectification and zero-voltage switching topologies.

Key Specifications

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, exposed drain pad for thermal conduction. Pin 1: Gate; Pin 2: Source (Driver); Pins 3–4: Power Source (common source); Pin 5: Drain (exposed pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R041P7XKSA1 and STP60N3LLH6, IPL60R365P7AUMA1 uniquely balances low gate charge (13 nC), industry-qualified reliability, and ThinPAK thermal performance - making it optimal for space-constrained, high-frequency, mission-critical power stages where driver simplicity and long-term stability are mandatory.

Availability

IPL60R365P7AUMA1 is available at Aetrix Electronics and suitable for server PSUs, telecom rectifiers, and industrial UPS systems requiring stable component supply, JEDEC-qualified reliability, and high-frequency switching capability.

Supply support for IPL60R365P7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

The CoolMOS™ P7 product line was developed to replace aging superjunction platforms in high-efficiency AC–DC and DC–DC conversion, targeting 96%+ efficiency in 1–5 kW server, telecom, and industrial power supplies.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off in a 300 kHz LLC resonant converter?

A 10 Ω gate resistor is validated in the datasheet test conditions (td(off) = 42 ns at RG = 10.0 Ω). For 300 kHz operation, RG ≤ 15 Ω maintains safe dv/dt control while limiting peak gate current to <1.3 A with 13 V drive - ensuring ZVS integrity without excessive ringing or shoot-through risk.

Can IPL60R365P7AUMA1 be paralleled in a 2 kW PFC module, and what layout precautions are required?

Yes - parallel operation is supported per Infineon's application note AN2017-05. Critical requirements include individual 10 Ω gate resistors with ferrite beads (600 Ω @ 100 MHz) on each gate trace, matched source inductance (<0.5 nH difference), and symmetrical thermal coupling to a common heatsink to avoid current imbalance above 85 °C junction temperature.

Does this MOSFET require a negative gate turn-off voltage to prevent spurious turn-on during high dv/dt switching?

No - the device's gate threshold voltage (3–4 V) and 30 V dynamic V_GS rating allow stable operation with 0 V to 13 V gate drive. Its low 6.2 Ω intrinsic gate resistance and low Q_gd/Q_g ratio suppress Miller-induced turn-on, eliminating need for negative bias in properly laid-out 400 V bus applications.

Is the ThinPAK 8x8 package compatible with standard reflow profiles for lead-free assembly?

Yes - the device is qualified for MSL2a per J-STD-020 and supports peak reflow temperatures up to 260 °C for ≤30 seconds. Recommended profile uses ramp rate ≤3 °C/s, preheat 150–200 °C for 90–120 s, and time above liquidus (217 °C) of 60–90 s - matching IPC-J-STD-020 Class 2a requirements.