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Infineon Technologies IPL65R230C7AUMA1
- Part No.:
- IPL65R230C7AUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 4-PowerTSFN
- Datasheet:
-
IPL65R230C7AUMA1.pdf
- Description:
- MOSFET N-CH 650V 10A 4VSON
- Quantity:
- Payment:
- Shipping:
Inventory:11,054
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Product details
Overview
IPL65R230C7AUMA1 from Infineon Technologies is a 650 V, 230 mΩ superjunction MOSFET in the CoolMOS™ C7 family, designed for high-efficiency hard-switching and PFC stages. It features a ThinPAK 8x8 SMD package with drain pin 5, gate pin 1, power source pins 3–4, and driver source pin 2-enabling low-inductance switching and precise gate control in server, telecom, and solar power supplies.
For engineers reviewing the IPL65R230C7AUMA1 datasheet, IPL65R230C7AUMA1 pinout, IPL65R230C7AUMA1 application, or IPL65R230C7AUMA1 equivalent, key selection criteria include RDS(on) max of 230 mΩ at 10 VGS, Qg typ of 20 nC, Eoss of 2.3 µJ at 400 V, dv/dt ruggedness up to 100 V/ns, and diF/dt capability of 55 A/µs for fast diode commutation.
Technical Context
This CoolMOS™ C7 device implements a charge-compensated superjunction structure optimized for reduced conduction and switching losses. Its gate plateau voltage of 5.0 V and low Qgd/Qg ratio (6/20 nC) support clean turn-off and robust dv/dt immunity in high-voltage DC-DC and PFC topologies.
The integrated driver source pin (Pin 2) provides Kelvin connection for gate drive loop decoupling, minimizing common-source inductance effects during fast switching. Thermal resistance RthJC is 1.87 °C/W, enabling high-power-density designs on minimal PCB copper area without forced airflow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V bus applications with 1.6× safety margin for transient overvoltage in telecom and UPS systems |
| RDS(on) max | 230 mΩ at Tj = 150 °C - enables <10 W conduction loss at 10 A continuous current in PFC boost stages |
| Qg typ | 20 nC - reduces gate drive power and allows use of lower-cost drivers in 100–300 kHz switching designs |
| Eoss | 2.3 µJ at 400 V - lowers turn-on energy loss and improves efficiency in ZVS-capable resonant converters |
| diF/dt max | 55 A/µs - ensures reliable body diode commutation in critical conduction mode (CrCM) and transition-mode PFC |
| dv/dt ruggedness | 100 V/ns - prevents false turn-on in high-dV/dt half-bridge and LLC primary switches |
| RthJC | 1.87 °C/W - supports >60 W power dissipation with simple heatsinking in compact 8×8 mm SMD layout |
Pinout & Package
Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, leadless, with exposed drain pad for thermal performance and low parasitic inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Standard MOSFET gate terminal; requires ≤20 V drive; low Qg enables fast edge rates |
| Pin 2 (Driver Source) | Kelvin source reference | Provides dedicated return path for gate driver to eliminate source inductance impact on switching behavior |
| Pins 3 & 4 (Power Source) | Main source connection | Carries full load current; tied internally to source region; used for power return and thermal conduction |
| Pin 5 (Drain) | High-voltage output node | Exposed drain pad on bottom; electrically and thermally connected to PCB copper for efficient heat transfer and low LPD |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction architecture | Enables 650 V rating with RDS(on) × Qg FOM 4.6 Ω·nC - best-in-class tradeoff for high-frequency PFC |
| Driver source pin (Kelvin source) | Reduces effective gate loop inductance by >70%, suppressing oscillation and improving switching consistency |
| ThinPAK 8x8 package | 0.95 mm profile with 8 mm × 8 mm footprint - delivers 35–45 °C/W RthJA on 6 cm² PCB copper, ideal for space-constrained servers |
| Industrial-grade qualification | Qualified per JEDEC J-STD-020 (MSL2a) and JESD22 - supports reflow soldering at 260 °C and operation from –40 to +150 °C |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier Module |
|---|---|
Use Scenario: Active front-end boost converter operating at 65–100 kHz in 1U/2U 1–3 kW AC-DC units. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) PFC, handling 10–20 A RMS input current. Use Value: 230 mΩ RDS(on) and 2.3 µJ Eoss reduce total losses by ~1.2 W vs. prior-gen SJ-MOSFETs, lowering heatsink size by 30%. | Use Scenario: 48 V output rectifier with hold-up capacitor and hot-swap capability in -48 V telecom systems. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology, switching at 150–200 kHz with ZVS assist. Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during high-slew-rate transitions, eliminating need for external snubbers. |
| Solar String Inverter DC-DC Stage | Industrial UPS Inverter Bridge |
Use Scenario: Isolated DC-DC stage stepping up PV string voltage (600–1000 V) to intermediate bus before inverter stage. IC Role / Device Role / Timing Role: High-side switch in active clamp forward or LLC resonant converter, operating at 200–300 kHz. Use Value: 55 A/µs diF/dt rating ensures clean body diode recovery during zero-voltage switching transitions, reducing EMI and stress. | Use Scenario: Three-phase IGBT/MOSFET bridge driving motor loads or grid-tie inverters in 5–15 kVA UPS systems. IC Role / Device Role / Timing Role: Low-side switch in hard-switched H-bridge leg, conducting up to 41 A pulsed current during overload events. Use Value: 48 mJ single-pulse avalanche energy rating allows safe operation under short-circuit conditions without external protection circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP65N6F7 | RDS(on) = 65 mΩ higher (295 mΩ), Qg = 26 nC, no driver source pin | Lacks Kelvin source; requires larger gate resistor to damp ringing in high-dv/dt layouts | Prefer when cost sensitivity outweighs layout complexity and efficiency targets |
| IXTH30N65X2 | RDS(on) = 220 mΩ, Qg = 22 nC, TO-247 package (higher RthJC = 0.55 °C/W) | Through-hole mounting; better thermal performance but larger footprint and higher parasitic inductance | Prefer when board-level reliability testing mandates through-hole mechanical stability |
Compared with STP65N6F7 and IXTH30N65X2, IPL65R230C7AUMA1 delivers superior power density via its ThinPAK 8x8 footprint and driver source pin-reducing gate loop inductance by >50% and enabling 10–15% higher switching frequency without compromising EMI or thermal margin.
Availability
IPL65R230C7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar DC-DC converters, and industrial UPS inverters requiring stable component supply across multi-year production cycles.
Supply support for IPL65R230C7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon and wide-bandgap technologies.
The CoolMOS™ C7 series targets high-efficiency, high-power-density AC-DC conversion in computing, telecom, and renewable energy systems-emphasizing low-loss switching, ruggedness, and ease of gate drive implementation.
FAQ
What is the maximum continuous drain current for IPL65R230C7AUMA1 at 100°C case temperature?
The maximum continuous drain current is 7 A at TC = 100 °C, as specified in Table 2 of the datasheet. This rating reflects thermal limits under steady-state conduction, not package or bondwire current capacity. Derating is required above 100 °C case temperature, and pulsed operation up to 41 A is permitted for short durations limited by junction temperature.
Does IPL65R230C7AUMA1 require a negative gate voltage for reliable turn-off?
No. The device operates reliably with 0 V to +10 V gate drive and does not require negative bias. Its gate threshold voltage (VGS(th)) ranges from 3.0 to 4.0 V, and gate oxide integrity is maintained with VGS ≤ ±20 V static or ±30 V dynamic. Negative gate drive may improve noise immunity in extreme EMI environments but is not necessary for functional operation.
Can IPL65R230C7AUMA1 be paralleled with identical units without external gate resistors?
No. Even with matched units, gate loop inductance mismatch can cause current imbalance during switching transients. The datasheet explicitly recommends using ferrite beads on each gate or separate totem-pole drivers to ensure balanced turn-on/turn-off. Driver source pin usage further improves matching but does not eliminate the need for individual gate damping.
Is the ThinPAK 8x8 package RoHS and REACH compliant?
Yes. IPL65R230C7AUMA1 uses Pb-free plating and halogen-free mold compound, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006 requirements. It is qualified to JEDEC J-STD-020 MSL2a, supporting standard lead-free reflow profiles up to 260 °C peak temperature.
IPL65R230C7AUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ C7
- Package/Case:
- 4-PowerTSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 230mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 996 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 67W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-VSON-4
IPL65R230C7AUMA1 FAQ
1.How can I place an order for IPL65R230C7AUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPL65R230C7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPL65R230C7AUMA1 reliable?
The price and inventory of IPL65R230C7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL65R230C7AUMA1 is usually 5 days.
3.What payment methods are accepted for IPL65R230C7AUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL65R230C7AUMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPL65R230C7AUMA1?
IPL65R230C7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPL65R230C7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPL65R230C7AUMA1?
For technical support, including IPL65R230C7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL65R230C7AUMA1 requirements.
6.How does Aetrix verify that IPL65R230C7AUMA1 is sourced from the original manufacturer or authorized distributors?
All IPL65R230C7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL65R230C7AUMA1 meets industry standards.
7.What is the process for return or replacement of IPL65R230C7AUMA1?
All IPL65R230C7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL65R230C7AUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPL65R230C7AUMA1 part is unused and in its original packaging.
Return procedure for IPL65R230C7AUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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