Infineon Technologies IPN60R360P7SATMA1

Overview

IPN60R360P7SATMA1 from Infineon Technologies is a 600V superjunction N-channel power MOSFET in the CoolMOS™ P7 generation, designed for high-efficiency hard- and soft-switching applications. It delivers R_DS(on) = 360 mΩ (max), Q_g = 13 nC (typ), E_oss = 1.6 µJ at 400 V, and supports I_D,pulse = 26 A - enabling compact, low-loss PFC and LLC stages in PC Silverbox, server PSU, and telecom power supplies.

For engineers reviewing the IPN60R360P7SATMA1 datasheet, IPN60R360P7SATMA1 pinout, IPN60R360P7SATMA1 application, or IPN60R360P7SATMA1 equivalent, key selection criteria include its 900 A/µs body diode commutation speed, 80 V/ns dv/dt ruggedness, 2 kV HBM ESD rating, and PG-SOT223 package thermal resistance of 17.4 °C/W (junction-to-solder point).

Technical Context

This device implements Infineon's 7th-generation superjunction architecture with optimized charge balancing for reduced switching and conduction losses. Its gate plateau voltage is 5.2 V, and it features a low C_iss of 555 pF and C_oss of 10 pF at 400 V, supporting fast, low-ringing switching in resonant topologies.

The body diode exhibits validated hard-commutation robustness up to 900 A/µs diF/dt and reverse recovery charge Q_rr = 0.74 µC at 400 V, making it suitable for bidirectional current paths in LLC half-bridge and active clamp flyback designs without external snubbing.

Key Specifications

Pinout & Package

IPN60R360P7SATMA1 uses the PG-SOT223 package (standard SOT-223 outline with exposed drain tab). The drain connects to the metal tab for enhanced thermal conduction and electrical grounding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with IPN60R280P7 and STP60N6F7, IPN60R360P7SATMA1 offers optimal balance of conduction loss, switching loss, and SMT thermal performance in space-constrained 600 V applications - especially where board-level ESD robustness (>2 kV HBM) and body diode ruggedness are design-critical.

Availability

IPN60R360P7SATMA1 is available at Aetrix Electronics and suitable for PC Silverbox power supplies, telecom rectifier modules, and LED high-bay lighting systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IPN60R360P7SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The CoolMOS™ P7 product line targets high-efficiency AC-DC conversion in server, telecom, and industrial power supplies, emphasizing reduced system size, improved thermal behavior, and simplified EMI filtering through low ringing and controlled switching.

FAQ

What is the maximum continuous drain current for IPN60R360P7SATMA1 at 100°C case temperature?

The maximum continuous drain current is 6 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating is thermally limited by junction temperature (T_j,max = 150°C) and the device's R_th,JS = 17.4 °C/W. Derating curves in Diagram 1 confirm 6 A is sustainable with proper PCB copper area and ambient conditions.

Can IPN60R360P7SATMA1 replace older CoolMOS™ P6 devices in existing designs?

Yes - it is a direct drop-in replacement for IPN60R360P6 in PG-SOT223 packages, with identical pinout, voltage rating, and R_DS(on). Key improvements include 15% lower E_oss, 20% lower Q_g, and enhanced body diode ruggedness, enabling immediate efficiency gains without layout changes.

Is a gate resistor required for stable operation in a 100 kHz LLC resonant converter?

Yes - a 5–10 Ω gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 555 pF C_iss and 6.2 Ω internal R_G. Layout best practices (short gate traces, local decoupling, Kelvin source connection) further improve stability at 100 kHz switching.

Does IPN60R360P7SATMA1 support parallel operation in high-current PFC designs?

Yes - but requires gate ferrite beads or individual totem-pole drivers per device to ensure current sharing. The datasheet explicitly recommends this approach due to minor threshold voltage variation (3.0–4.0 V) and thermal coupling effects in parallel configurations.