Infineon Technologies IPN60R600P7SATMA1

Overview

IPN60R600P7SATMA1 from Infineon Technologies is a 600 V, 0.6 Ω R_DS(on) superjunction MOSFET in PG-SOT223 package, optimized for high-efficiency PFC and LLC resonant converters. It delivers 9 nC total gate charge, 1.1 µJ E_oss at 400 V, and 900 A/µs body diode commutation speed, enabling compact, cool-running power supplies in PC Silverbox, server PSU, and telecom rectifiers.

For engineers reviewing the IPN60R600P7SATMA1 datasheet, IPN60R600P7SATMA1 pinout, IPN60R600P7SATMA1 application, or IPN60R600P7SATMA1 equivalent, key selection criteria include its low ringing tendency in hard-switched PFC stages, robust 150 °C junction rating, and validated 16 A pulsed drain current capability under thermal constraint.

Technical Context

This CoolMOS™ P7 device implements a superjunction architecture with trench-gate cell design, delivering reduced R_DS(on) × area (0.59 Ω·mm²) and enhanced dv/dt ruggedness (80 V/ns). Its gate plateau voltage is 5.2 V, and it features a 6.3 Ω intrinsic gate resistance-enabling stable switching without external gate damping in most 100–300 kHz PFC designs.

The body diode supports 900 A/µs reverse recovery diF/dt and exhibits 160 ns trr with 0.71 µC Q_rr at 400 V, making it suitable for bidirectional conduction in synchronous rectification and half-bridge LLC secondary-side operation where hard commutation occurs.

Key Specifications

Pinout & Package

Package: PG-SOT223 (TO-261AA), surface-mount, single-drain-tab configuration with exposed drain pad for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STP60N6F7, IPN60R600P7SATMA1 offers 28% lower gate charge and SMT compatibility; versus IPP60R600P7, it trades 2.2× smaller PCB area for 2.2× higher thermal resistance-making it optimal for space-constrained 25–40 W PFC stages.

Availability

IPN60R600P7SATMA1 is available at Aetrix Electronics and suitable for PC Silverbox power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IPN60R600P7SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.

The CoolMOS™ P7 product line targets high-efficiency, high-power-density offline power conversion-specifically engineered to replace older superjunction generations in PFC, LLC, and resonant SMPS designs demanding low EMI and simplified thermal design.

FAQ

What is the maximum recommended gate drive voltage for IPN60R600P7SATMA1?

The absolute maximum static gate-source voltage is ±20 V, and dynamic (AC) rating is ±30 V. For reliable operation, gate drive should be clamped to 13 V with a 12 V Zener or dedicated gate driver IC. Exceeding 15 V risks accelerated gate oxide degradation over time, especially at elevated junction temperatures above 125 °C.

Can IPN60R600P7SATMA1 be paralleled for higher current capacity?

Yes, but only with careful layout: use individual 10 Ω gate resistors per device, add ferrite beads (600 Ω @ 100 MHz) in series with each gate, and ensure matched trace lengths and symmetric copper pours. Parallel operation beyond two units is not recommended due to inherent R_DS(on) mismatch and thermal coupling effects observed in PG-SOT223 packages.

Does this MOSFET require a gate driver with negative turn-off capability?

No. The device's low 6.3 Ω internal gate resistance and 5.2 V gate plateau voltage enable clean turn-off with standard 0–12 V CMOS drivers. Negative turn-off is unnecessary unless operating above 300 kHz with ultra-low-inductance layouts where Miller-induced false turn-on is observed-verified only in lab conditions with >500 V/ns dv/dt transients.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the SOA is limited to 4 A DC current at V_DS = 100 V, or 1.2 A at V_DS = 400 V, per the datasheet Figure 2 and derating curves. This reflects thermal saturation-not avalanche limit-and assumes proper PCB copper area (≥6 cm²) and no airflow. Pulse operation up to 16 A is permitted only for t_p ≤ 100 µs with duty cycle <0.1%.