Infineon Technologies IPN80R1K2P7ATMA1

Overview

IPN80R1K2P7ATMA1 from Infineon is an 800V N-channel superjunction MOSFET in PG-SOT223 package, designed for high-voltage hard/soft-switching flyback and PFC stages. It delivers R_DS(on) = 1.2 Ω (max), Q_g = 11 nC (typ), V_GS(th) = 3 V (typ), and integrated Zener-protected gate, targeting LED lighting, low-power adapters, and industrial auxiliary supplies.

For engineers reviewing the IPN80R1K2P7ATMA1 datasheet, IPN80R1K2P7ATMA1 pinout, IPN80R1K2P7ATMA1 application, or IPN80R1K2P7ATMA1 equivalent, key selection criteria include 800V V_DS rating, 1.2 Ω R_DS(on) at 10 V_GS, ±0.5 V V_GS(th) tolerance, ESD Class 2 HBM compliance, and DPAK-equivalent thermal performance with R_thJA = 75 °C/W on 6 cm² copper.

Technical Context

This CoolMOS™ P7 device uses charge-compensation superjunction architecture to achieve best-in-class figure-of-merit (R_DS(on) × E_oss) of 1.2 Ω × 1.0 µJ at 500 V. Its 3 V gate threshold enables direct drive from 3.3 V/5 V controllers without level-shifting, while tight ±0.5 V V_GS(th) variation ensures consistent turn-on behavior across production lots.

The integrated Zener diode provides robust ±20 V gate-source ESD protection (HBM Class 2), and its optimized C_iss = 300 pF and C_oss = 6 pF support fast switching with low capacitive losses. The device is fully qualified per JEDEC industrial standards and supports parallel operation with ferrite-bead gate damping.

Key Specifications

Pinout & Package

Package: PG-SOT223 (DPAK-equivalent footprint, tab-connected to Drain). Thermal resistance R_thJS = 18.3 °C/W enables efficient heat transfer from junction to solder point.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800V superjunction MOSFET applications.

Compared with STP80NF55-08 and IPP60R1K2P7, IPN80R1K2P7ATMA1 uniquely combines 800 V capability, SOT223 footprint, 11 nC gate charge, and ±0.5 V V_GS(th) tolerance-enabling compact, high-efficiency, and production-stable designs in sub-15 W flyback and auxiliary supplies.

Availability

IPN80R1K2P7ATMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, low-power AC/DC adapters, and industrial auxiliary power supplies requiring stable component supply and long-term industrial qualification.

Supply support for IPN80R1K2P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification.

This part belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for high-voltage, high-efficiency SMPS topologies-including flyback, PFC, and resonant converters-in consumer, lighting, and industrial power applications.

FAQ

What is the maximum continuous drain current for IPN80R1K2P7ATMA1 at 100°C case temperature?

The maximum continuous drain current is 3.1 A at T_C = 100°C, as specified in Table 2 of the datasheet. This value accounts for thermal derating due to junction-to-case thermal resistance and safe operating area limits-not ambient temperature alone. Operation above this current requires active cooling or reduced duty cycle to maintain T_j ≤ 150°C.

Does IPN80R1K2P7ATMA1 include a body diode, and what are its reverse recovery characteristics?

Yes, it features an integrated fast-recovery body diode with t_rr = 580 ns, Q_rr = 3.8 µC, and I_rrm = 9 A at V_R = 400 V and dI_F/dt = 50 A/µs. These values are measured under standardized conditions and enable predictable snubberless operation in quasi-resonant flyback designs.

Can IPN80R1K2P7ATMA1 be used in parallel configurations, and what layout guidance applies?

Yes-its tight V_GS(th) tolerance (±0.5 V) and matched dynamic parameters support paralleling. Infineon recommends using individual ferrite beads on each gate trace (not shared) and separate totem-pole drivers to prevent oscillation and ensure current sharing. Layout symmetry and equal trace lengths are mandatory.

Is the PG-SOT223 package lead-free and RoHS-compliant?

Yes, IPN80R1K2P7ATMA1 is manufactured in a lead-free, RoHS-compliant process and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements. The package uses matte tin plating and supports standard reflow profiles up to 260°C peak temperature.