Infineon Technologies IPN80R1K4P7ATMA1

Overview

IPN80R1K4P7ATMA1 from Infineon is an 800V N-channel superjunction MOSFET in PG-SOT223 package, designed for high-voltage hard/soft-switching flyback and PFC stages. It delivers R_DS(on) = 1.4 Ω (max), Q_g = 10 nC (typ), V_GS(th) = 3 V (typ), and E_oss = 0.9 µJ @ 500 V - enabling compact LED drivers, low-power adapters, and auxiliary power supplies.

For engineers reviewing the IPN80R1K4P7ATMA1 datasheet, IPN80R1K4P7ATMA1 pinout, IPN80R1K4P7ATMA1 application, or IPN80R1K4P7ATMA1 equivalent, key selection criteria include its 3 V gate threshold with ±0.5 V variation, integrated Zener-protected gate, 800 V breakdown rating, and DPAK-equivalent thermal performance in SOT223 footprint.

Technical Context

This CoolMOS™ P7 device uses charge compensation technology to achieve best-in-class figure-of-merit (R_DS(on) × E_oss) among 800 V superjunction MOSFETs. Its low C_iss (250 pF) and C_oss (6.5 pF) reduce switching losses, while the 4.5 V gate plateau voltage ensures stable turn-on under varying drive conditions.

The MOSFET integrates a robust body diode with t_rr = 800 ns and Q_rr = 5 µC, optimized for snubberless flyback operation. Its 100 V/ns dv/dt ruggedness and 1.5 Ω gate resistance support reliable operation in noisy industrial environments without external gate damping.

Key Specifications

Pinout & Package

Package: PG-SOT223 (lead-free, RoHS-compliant), with exposed drain tab for thermal conduction. Standard SOT223 footprint with 2.3 mm pitch; drain connected to tab for direct heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP80NF55-08 and IPP60R1K4C7XKSA1, IPN80R1K4P7ATMA1 uniquely balances 800 V capability, SOT223 footprint, and ultra-low gate charge-making it optimal for space-constrained, high-efficiency flyback designs requiring universal input support.

Availability

IPN80R1K4P7ATMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, low-power AC/DC adapters, and auxiliary power supplies requiring stable component supply and long-lifecycle support.

Supply support for IPN80R1K4P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions, with over 30 years of leadership in silicon power devices.

This part belongs to the CoolMOS™ P7 family, engineered specifically for high-efficiency, high-density offline SMPS topologies-including flyback, PFC, and resonant converters-where low gate charge and tight V_GS(th) tolerance are critical.

FAQ

What is the maximum continuous drain current for IPN80R1K4P7ATMA1 at 100°C case temperature?

The maximum continuous drain current is 2.7 A at T_C = 100°C, as specified in Table 2 of the datasheet. This limit is thermally derived-not absolute SOA-bound-and assumes proper PCB copper area (6 cm²) and vertical mounting without forced airflow. Exceeding this current risks junction temperature exceeding 150°C.

Does IPN80R1K4P7ATMA1 require an external gate resistor for stability in flyback applications?

Yes, a gate resistor (typically 10–47 Ω) is recommended to dampen ringing and prevent spurious turn-on due to Miller capacitance coupling. The device's 1.5 Ω intrinsic gate resistance is insufficient alone; external resistance controls dV/dt during switching transitions and ensures clean gate waveform integrity.

Can IPN80R1K4P7ATMA1 be used in parallel configurations?

Yes, it is explicitly qualified for paralleling per Infineon's application note AN2017-04. Use individual gate ferrite beads (e.g., 100 Ω @ 100 MHz) and matched gate trace lengths to ensure current sharing within ±10%. Avoid shared gate resistors to prevent oscillation.

Is the drain tab electrically isolated from the PCB copper in PG-SOT223 packaging?

No-the drain tab is directly connected to Pin 2 and must be soldered to a dedicated, non-isolated copper pour serving as both thermal path and high-voltage node. Electrical isolation requires insulating thermal pads or dielectric coatings; standard assembly ties drain to primary-side ground reference.