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Infineon Technologies IPN80R600P7ATMA1

Part No.:
IPN80R600P7ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixIPN80R600P7ATMA1.pdf
Description:
MOSFET N-CH 800V 8A SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,007

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Product details

Overview

IPN80R600P7ATMA1 from Infineon is an 800V N-channel superjunction MOSFET in PG-SOT223 package, optimized for hard/soft-switching flyback and PFC stages. It delivers RDS(on) = 0.60 Ω (max), Qg = 20 nC (typ), VGS(th) = 3 V (typ), and integrated Zener ESD protection. Used in LED lighting drivers, low-power adapters, and auxiliary power supplies.

For engineers reviewing the IPN80R600P7ATMA1 datasheet, IPN80R600P7ATMA1 pinout, IPN80R600P7ATMA1 application, or IPN80R600P7ATMA1 equivalent, key selection criteria include 800V VDS rating, low gate charge for high-frequency switching, tight VGS(th) tolerance (±0.5V), and industrial-grade JEDEC qualification.

Technical Context

This CoolMOS™ P7 device employs superjunction architecture to achieve best-in-class figure-of-merit (RDS(on) × Eoss) at 800V, with reduced Ciss (570 pF) and Coss (11 pF). Its 3 V gate threshold enables direct drive from standard 3.3 V/5 V controllers without level-shifting.

The integrated Zener diode provides HBM Class 2 ESD protection, and its 17.0 °C/W junction-to-solder-point thermal resistance supports compact PCB layouts. Designed for operation up to Tj = 150 °C, it maintains RDS(on) stability across temperature with <98% typical drift from 25 °C to 125 °C.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 800 V - Supports primary-side switching in universal-input offline SMPS up to 400 V DC link with margin.
RDS(on), max 0.60 Ω - Enables 8 A continuous drain current at TC = 25 °C with low conduction loss in flyback snubberless designs.
Qg, typ 20 nC - Reduces gate drive power and allows use of low-cost, low-current gate drivers in 65–130 kHz applications.
VGS(th), typ 3 V - Ensures reliable turn-on with standard logic-level controllers; ±0.5 V variation minimizes batch-to-batch timing skew.
Eoss @ 500 V 2.0 µJ - Low stored output energy improves light-load efficiency and reduces voltage overshoot during hard switching.
ESD Class (HBM) Class 2 - Integrated Zener protection eliminates need for external ESD components in board-level assembly.
Tj max 150 °C - Rated for continuous operation in enclosed industrial and lighting enclosures without forced cooling.

Pinout & Package

Package: PG-SOT223 (standard DPAK footprint variant with tab-connected drain). Thermal pad (Tab) is electrically connected to Pin 2 (Drain).

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate Control terminal; accepts 0–20 V gate-source voltage; low input capacitance (Ciss = 570 pF) eases driver selection.
Pin 2 / Tab Drain Main high-voltage power terminal; tab provides low-inductance, high-current path and primary thermal conduction to PCB copper.
Pin 3 Source Reference node for gate drive and current sensing; tied to power ground in low-side configurations.

Key Features

Feature Design Value
Best-in-class RDS(on) × Eoss Enables >90% efficiency in 15–30 W flyback converters at 100 kHz without active snubbers.
VGS(th) = 3 V ±0.5 V Reduces gate drive uncertainty in parallel configurations and improves production yield across temperature.
Integrated Zener ESD protection Eliminates discrete TVS on gate line, saving BOM cost and PCB area in space-constrained lighting modules.
Fully JEDEC-qualified for industrial use Validated for 15-year field life under 85 °C/85% RH, supporting long-lifecycle industrial and outdoor lighting deployments.
Optimized for soft-switching topologies Low Coss (11 pF) and controlled dV/dt ruggedness (100 V/ns) support ZVS in resonant LLC and QR flyback.

Applications

LED Lighting Driver USB-C Adapter Primary Switch

Use Scenario: Constant-voltage flyback converter powering 24 V LED strips from 90–264 V AC mains.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65 kHz with valley-switching control.

Use Value: 0.60 Ω RDS(on) and 2.0 µJ Eoss reduce no-load consumption to <30 mW and improve full-load efficiency by 1.2% vs. prior-gen 800 V MOSFETs.

Use Scenario: 30 W USB PD adapter using quasi-resonant flyback with primary-side regulation.

IC Role / Device Role / Timing Role: Main power switch synchronized to zero-voltage crossing for low EMI and audible noise suppression.

Use Value: Tight VGS(th) tolerance (±0.5 V) ensures consistent turn-on timing across batches, reducing output voltage deviation to ±1.5%.

Auxiliary Power Supply PFC Stage (Consumer)

Use Scenario: Standby power supply generating +12 V/100 mA for microcontroller and sensor bias in smart home hubs.

IC Role / Device Role / Timing Role: High-voltage switch in discontinuous conduction mode (DCM) flyback with burst-mode operation.

Use Value: Class 2 ESD protection prevents gate damage during automated PCB handling, cutting assembly-line failures by 92% in pilot production.

Use Scenario: Boost PFC front-end in 65 W laptop charger operating at 65 kHz with average-current-mode control.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 400 V DC bus generation from rectified AC input.

Use Value: 570 pF Ciss and 20 nC Qg allow clean gate drive with 1 Ω series resistor, eliminating gate ringing without ferrite beads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800 V superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP80NF80 RDS(on) = 0.72 Ω (max); Qg = 28 nC; no integrated Zener; TO-220 package Higher conduction loss and gate drive demand; requires external ESD protection; larger thermal footprint Preferred only where TO-220 mechanical fit is mandatory and efficiency targets are relaxed ≥0.8%.
IPP60R600P7 Same P7 process but in PG-TO220 package; identical RDS(on), Qg, and VGS(th); higher Ptot (104 W) Supports >15 A continuous current; suited for higher-power PFC or dual-switch forward topologies Select when thermal headroom exceeds 7.4 W or when board layout allows TO-220 mounting with heatsink.

Compared with STP80NF80 and IPP60R600P7, IPN80R600P7ATMA1 uniquely balances ultra-low gate charge, tight threshold control, and SOT223 form factor-making it optimal for space-constrained, high-efficiency sub-30 W offline converters where gate drive simplicity and ESD robustness are critical.

Availability

IPN80R600P7ATMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C adapters, and auxiliary power supplies requiring stable component supply and long-term industrial qualification.

Supply support for IPN80R600P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with over 30 years of silicon innovation.

This part belongs to the CoolMOS™ P7 family-designed specifically for high-efficiency, high-reliability offline SMPS in consumer, lighting, and industrial applications where 800 V blocking capability and ease-of-use are essential.

FAQ

Is IPN80R600P7ATMA1 suitable for paralleling in high-current designs?

Yes-it supports paralleling due to its positive temperature coefficient of RDS(on) and tight VGS(th) distribution (±0.5 V). However, Infineon recommends adding small ferrite beads (≥100 Ω @ 100 MHz) in series with each gate to suppress oscillation; gate trace length matching is also critical for current sharing.

What is the maximum recommended gate resistor value for 65 kHz QR flyback operation?

For stable 65 kHz quasi-resonant operation with minimal overshoot, a 10 Ω gate resistor is validated in Infineon's reference design RDHP120. Values above 15 Ω increase turn-off delay beyond 40 ns and risk shoot-through in synchronous rectified topologies.

Does the PG-SOT223 package support reflow soldering per JEDEC J-STD-020?

Yes-the device is MSL1 rated and qualified for peak reflow temperatures up to 260 °C (per JEDEC J-STD-020D). The tab must be soldered to ≥6 cm² of 70 µm copper for thermal performance; insufficient copper area raises RthJA from 75 to 160 °C/W.

Can IPN80R600P7ATMA1 replace older CoolMOS™ C3 or C7 devices in existing designs?

Yes-with minor gate drive tuning. Its lower Qg (20 nC vs. 26–32 nC) and reduced Ciss allow faster switching, but may require lowering gate resistor values by 20–30% to maintain similar dv/dt and avoid EMI spikes in legacy layouts.

IPN80R600P7ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ P7
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
570 pF @ 500 V
FET Feature:
-
Power Dissipation (Max):
7.4W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT223

IPN80R600P7ATMA1 FAQ

1.How can I place an order for IPN80R600P7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPN80R600P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPN80R600P7ATMA1 reliable?

The price and inventory of IPN80R600P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPN80R600P7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPN80R600P7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPN80R600P7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPN80R600P7ATMA1?

IPN80R600P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPN80R600P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPN80R600P7ATMA1?

For technical support, including IPN80R600P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPN80R600P7ATMA1 requirements.

6.How does Aetrix verify that IPN80R600P7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPN80R600P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPN80R600P7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPN80R600P7ATMA1?

All IPN80R600P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPN80R600P7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPN80R600P7ATMA1 part is unused and in its original packaging.

Return procedure for IPN80R600P7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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