Infineon Technologies IPP013N04NF2SAKMA1

Overview

IPP013N04NF2SAKMA1 from Infineon is an N-channel enhancement-mode MOSFET in PG-TO220-3 package, rated for 40 V drain-source voltage, 1.3 mΩ typical R_DS(on) at V_GS = 10 V, and 198 A continuous drain current at T_C = 25 °C. It serves as a high-current synchronous rectifier or primary-side switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IPP013N04NF2SAKMA1 datasheet, IPP013N04NF2SAKMA1 pinout, IPP013N04NF2SAKMA1 application, or IPP013N04NF2SAKMA1 equivalent, key selection criteria include its 1.3 mΩ on-resistance, 176 nC output charge, 100% avalanche-tested ruggedness, JEDEC-qualified reliability, and TO-220 thermal performance with 0.51 °C/W R_thJC.

Technical Context

This StrongIRFET™2 device uses trench-gate silicon technology optimized for low conduction and switching losses in high-frequency hard-switched topologies. Its gate threshold voltage (2.1–3.4 V) ensures robust noise immunity while enabling direct drive from standard 5 V or 3.3 V logic controllers.

The MOSFET integrates a fast, low-Q_rr body diode (t_rr = 44–55 ns, Q_rr = 65–230 nC) suitable for synchronous rectification in buck, half-bridge, and LLC resonant converters. Thermal design leverages the exposed drain tab for direct heatsink mounting and achieves 294 W power dissipation at T_C = 25 °C.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS/halogen-free compliant). Drain connected to metal tab for thermal and electrical conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 40 V MOSFET applications.

Compared with IPB013N04LGATMA1 and STL220N4F7AG, IPP013N04NF2SAKMA1 delivers the lowest R_DS(on) × Q_oss product in TO-220 form factor-making it optimal for thermally constrained, high-current, medium-frequency (<1 MHz) applications requiring maximum power density and avalanche ruggedness.

Availability

IPP013N04NF2SAKMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IPP013N04NF2SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™2 family-designed specifically for high-efficiency, high-current power conversion in data center, industrial, and renewable energy systems where low R_DS(on), rugged avalanche behavior, and thermal performance are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 175 °C as the absolute maximum case temperature. Continuous operation at this limit requires active cooling and derating of I_D per Figure 2 (I_D vs. T_C). At T_C = 100 °C, the continuous drain current drops to 153 A. Thermal design must maintain T_C ≤ 125 °C for reliable long-term use in industrial environments.

Is the drain tab electrically isolated from the package leads?

No-the drain (Pin 2) is internally connected to the metal tab, which is electrically active and thermally conductive. The tab must be electrically insulated from the heatsink using a mica or ceramic washer unless the drain node is at system ground potential. This configuration is standard for TO-220 packages and confirmed in Infineon's Package Outline document.

Does this MOSFET support gate drive from 3.3 V microcontrollers?

No-it is a normal-level (not logic-level) device with V_GS(th) = 2.1–3.4 V and requires ≥10 V gate drive for full R_DS(on) specification. Driving from 3.3 V results in R_DS(on) > 10 mΩ and excessive conduction loss. A dedicated gate driver (e.g., 1EDN7512B) or level-shifting circuit is mandatory for proper enhancement-mode operation.

How does the body diode performance compare to Schottky alternatives in synchronous rectification?

Its body diode has t_rr = 44–55 ns and Q_rr = 65–230 nC-significantly faster and lower-charge than standard silicon MOSFETs, but still slower than Schottky diodes (t_rr ≈ 0 ns). In synchronous rectifiers, it eliminates forward voltage drop (V_F ≈ 0.85 V) but introduces recoverable reverse recovery loss. Best used where gate drive timing allows soft recovery or where Schottky voltage rating (≤30 V) is insufficient.