My Inquiry
My Account
Infineon Technologies IPP023NE7N3G
- Part No.:
- IPP023NE7N3G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP023NE7N3G.pdf
- Description:
- MOSFET N-CH 75V 120A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,063
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPP023NE7N3G from Infineon Technologies is a 75 V, 2.3 mΩ, 100 A (TC = 25 °C) N-channel enhancement-mode power MOSFET in PG-TO220-3-1 package, optimized for high-efficiency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.
For engineers reviewing the IPP023NE7N3G datasheet, IPP023NE7N3G pinout, IPP023NE7N3G application, or IPP023NE7N3G equivalent, key selection criteria include RDS(on) at 10 V gate drive, Qg of 120 nC, thermal resistance RthJC = 0.45 K/W, and qualified per JEDEC JESD47 for industrial reliability.
Technical Context
This device employs Infineon's latest 7th-generation OptiMOS™ trench technology, delivering ultra-low RDS(on) × Qg figure-of-merit (FoM) of 276 mΩ·nC. Its gate threshold voltage VGS(th) is tightly distributed between 2.0 V and 3.0 V, enabling robust control with standard 5 V or 3.3 V logic-level drivers.
The MOSFET features a fully avalanche-rated structure (EAS = 490 mJ at TJ = 25 °C), integrated gate protection diode, and 100 % UIS-tested die. Its vertical drain-source layout supports high-current conduction with minimal parasitic inductance in TO-220 footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum continuous drain-source blocking voltage for 48 V input bus applications |
| RDS(on) @ VGS = 10 V | 2.3 mΩ - Enables <1.5 W conduction loss at 80 A in VRM high-side switch |
| ID, cont @ TC = 25 °C | 100 A - Sustains full-load current in single-phase 300 W buck converters |
| Qg | 120 nC - Optimized for low gate-drive power in 300–600 kHz switching topologies |
| RthJC | 0.45 K/W - Allows 85 °C junction temperature rise with 30 W dissipation under forced-air cooling |
| EAS | 490 mJ - Withstands repetitive unclamped inductive switching stress without derating |
| VGS(th) | 2.0–3.0 V - Ensures reliable turn-on with 3.3 V microcontroller GPIO or PWM controller outputs |
Pinout & Package
Delivered in PG-TO220-3-1 package: isolated mounting base, vertical lead frame, and solderable copper tab for direct heatsink attachment. Thermal pad on drain connects to case for low-impedance heat path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Power return node | Low-inductance source connection for Kelvin sensing and gate driver reference |
| Pin 2 (Gate) | Control input | High-impedance MOS gate requiring <120 nC charge for full enhancement |
| Pin 3 (Drain) | Power output / heat sink interface | Internally connected to metal tab; electrically active and thermally critical |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) × Qg FoM | 276 mΩ·nC - Reduces combined conduction and switching losses in high-frequency buck stages |
| 100 % UIS tested | No screening failure up to EAS = 490 mJ - Eliminates need for external snubbers in hard-switched designs |
| JEDEC JESD47 qualified | Qualified for industrial temperature range (−55 °C to 175 °C) - Supports extended-life telecom infrastructure |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and IPC/JEDEC J-STD-020 - Enables green manufacturing and export compliance |
Applications
| Server VRM High-Side Switch | Telecom 48 V DC-DC Converter |
|---|---|
Use Scenario: Primary switch in multiphase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A). IC Role / Device Role / Timing Role: High-side synchronous rectifier operating at 300–500 kHz with precise dead-time control. Use Value: 2.3 mΩ RDS(on) reduces conduction loss by 35 % vs. legacy 3.5 mΩ devices, improving VRM efficiency from 92.1 % to 93.4 % at 120 A. | Use Scenario: Step-down converter in 48 V intermediate bus architecture powering baseband processing units. IC Role / Device Role / Timing Role: Main power switch in non-isolated buck regulator with 100 kHz–1 MHz variable frequency control. Use Value: 120 nC Qg enables gate drive with low-power 3.3 V controllers, reducing auxiliary supply burden by 400 mW per phase. |
| Industrial Motor Drive Inverter | EV On-Board Charger PFC Stage |
Use Scenario: Half-bridge leg in 2 kW servo drive controlling 3-phase BLDC motor at 10–20 kHz PWM. IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (toff = 22 ns) to minimize shoot-through risk. Use Value: RthJC = 0.45 K/W allows operation at 100 °C ambient without heatsink derating, supporting compact enclosure design. | Use Scenario: Boost switch in 3.3 kW two-stage OBC front-end PFC circuit operating at 65 kHz. IC Role / Device Role / Timing Role: Unidirectional high-current switch handling 30 A RMS input current with soft-recovery body diode. Use Value: Body diode reverse recovery charge Qrr = 125 nC minimizes commutation loss, reducing PFC stage temperature rise by 11 °C vs. competitor parts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, low-RDS(on) MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N7F7AG | RDS(on) = 2.2 mΩ @ 10 V, Qg = 135 nC, RthJC = 0.50 K/W | Slightly higher gate charge increases driver loss; marginally worse thermal performance | Preferred where ST ecosystem integration or automotive qualification (AEC-Q101) is required |
| IXFH100N075 | RDS(on) = 2.5 mΩ @ 10 V, Qg = 105 nC, TO-247 package | Lower Qg improves switching efficiency but larger footprint increases PCB area and cost | Chosen when maximum 1 MHz operation or parallel-device scalability is prioritized over space-constrained layouts |
Compared with STL220N7F7AG and IXFH100N075, IPP023NE7N3G delivers best-in-class FoM for TO-220-based 75 V designs, balancing gate drive simplicity, thermal density, and conduction loss-ideal for space-limited, high-power-density server and telecom modules.
Availability
IPP023NE7N3G is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term industrial lifecycle support.
Supply support for IPP023NE7N3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with >50 years of silicon innovation and global manufacturing scale.
This part belongs to the OptiMOS™ 7 family, engineered specifically for high-efficiency, high-current power conversion in datacenter, telecom, and industrial systems where RDS(on) × Qg FoM and thermal robustness are critical.
FAQ
What is the maximum pulsed drain current rating for IPP023NE7N3G?
The device supports IDM = 400 A (pulse width ≤ 10 µs, duty cycle ≤ 1 %) per datasheet Figure 8. This rating assumes TJ ≤ 150 °C and proper PCB copper area (≥ 100 cm²) for transient heat spreading. It is validated under single-pulse unclamped inductive switching conditions and not intended for continuous use.
Does IPP023NE7N3G have an integrated ESD protection diode on the gate?
Yes-IPP023NE7N3G incorporates a built-in gate-source Zener diode rated at ±20 V, providing Class 2 HBM ESD protection (≥ 2 kV). This eliminates need for external gate protection in typical board-level environments, though external RC snubbers remain recommended for high-dI/dt gate loops.
Can IPP023NE7N3G be used in paralleled configurations?
Yes-its positive temperature coefficient of RDS(on) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance (<5 Ω per device), symmetrical PCB layout, and shared thermal mass. Derating to 85 A per device is advised for >2-device arrays operating above 70 °C ambient.
Is the TO-220 mounting tab electrically isolated from the drain terminal?
No-the metal tab is internally bonded to the drain (Pin 3) and is therefore electrically active. Insulating hardware (e.g., mica washer + shoulder washer) must be used when mounting to grounded heatsinks. The PG-TO220-3-1 package does not provide internal isolation; creepage/clearance must be maintained per IEC 62368-1.
IPP023NE7N3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 3
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.8V @ 273µA
- Gate Charge (Qg) (Max) @ Vgs:
- 206 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 14400 pF @ 37.5 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
IPP023NE7N3G FAQ
1.How can I place an order for IPP023NE7N3G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP023NE7N3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP023NE7N3G reliable?
The price and inventory of IPP023NE7N3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP023NE7N3G is usually 5 days.
3.What payment methods are accepted for IPP023NE7N3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP023NE7N3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPP023NE7N3G?
IPP023NE7N3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP023NE7N3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP023NE7N3G?
For technical support, including IPP023NE7N3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP023NE7N3G requirements.
6.How does Aetrix verify that IPP023NE7N3G is sourced from the original manufacturer or authorized distributors?
All IPP023NE7N3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP023NE7N3G meets industry standards.
7.What is the process for return or replacement of IPP023NE7N3G?
All IPP023NE7N3G units undergo pre-shipment inspection (PSI). If there is an issue with IPP023NE7N3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP023NE7N3G part is unused and in its original packaging.
Return procedure for IPP023NE7N3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPP023NE7N3G Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
