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Infineon Technologies IPP030N06NF2SAKMA1

Part No.:
IPP030N06NF2SAKMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP030N06NF2SAKMA1.pdf
Description:
TRENCH 40<-<100V PG-TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:566

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Product details

Overview

IPP030N06NF2SAKMA1 from Infineon is an N-channel enhancement-mode MOSFET in PG-TO220-3 package, rated for 60 V drain-source voltage, 3.05 mΩ typical RDS(on) at VGS = 10 V, and 120 A continuous drain current at TC = 25 °C. It serves as a high-efficiency power switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IPP030N06NF2SAKMA1 datasheet, IPP030N06NF2SAKMA1 pinout, IPP030N06NF2SAKMA1 application, or IPP030N06NF2SAKMA1 equivalent, key selection criteria include RDS(on) at 10 V drive, 100% avalanche ruggedness, gate charge (Qg = 68 nC), thermal resistance (RthJC = 0.95 °C/W), and TO-220 mechanical compatibility.

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in hard-switched topologies. Its 60 V rating supports 48 V input systems, while the 3.05 mΩ RDS(on) enables high-current operation with minimal I²R loss at 70 A.

The MOSFET features a fully characterized body diode with trr = 41 ns and Qrr = 44 nC at dI/dt = 100 A/μs, supporting synchronous rectification and bidirectional energy transfer in LLC and buck-boost converters.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage compatible with 48 V nominal bus systems and transient overvoltage tolerance up to 60 V.
RDS(on), max3.05 mΩ at VGS = 10 V, ID = 70 A - Enables ≤2.1 W conduction loss at 70 A, critical for high-current power stages.
Qg68 nC - Total gate charge determines driver strength requirement and switching loss in hard-switched applications.
ID, cont120 A at TC = 25 °C - Supports high-output-current designs when mounted on adequate heatsink (e.g., 40 mm × 40 mm copper area).
RthJC0.95 °C/W - Junction-to-case thermal resistance allows direct thermal interface to heatsink without thermal derating penalty.
EAS192 mJ - Single-pulse avalanche energy rating confirms robustness against inductive switching stress without external snubbers.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS-compliant). Tab is electrically connected to Drain.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control terminalReceives gate drive signal; requires ≥10 V for full enhancement; gate threshold is 2.1–3.3 V.
Pin 2 (Drain) + TabHigh-side power pathConnected directly to heatsink; carries full load current and must be electrically isolated from PCB ground if used in high-side configuration.
Pin 3 (Source)Reference nodeServes as return path for load current and reference for gate drive; common connection point for sense resistor or current monitoring.

Key Features

FeatureDesign Value
100% avalanche testedGuarantees single-pulse ruggedness up to 192 mJ without failure-enables reliable operation in inductive switching circuits without added protection.
Pb-free, halogen-freeComplies with RoHS and IEC61249-2-21 standards-supports environmentally compliant manufacturing and end-of-life recycling requirements.
Optimized for wide range of applicationsValidated across motor control, DC-DC, and battery-powered systems-reduces qualification effort across multiple product lines.
StrongIRFET™2 architectureDelivers lower RDS(on) × Qg figure-of-merit than prior generation-improves efficiency in both conduction and switching domains.

Applications

Motor Drive Inverter Stage48 V Input DC-DC Converter

Use Scenario: High-current half-bridge leg in BLDC motor controller for industrial automation equipment.

IC Role / Device Role / Timing Role: Power switch in low-side position; commutates 70–100 A phase current at 20–50 kHz PWM frequency.

Use Value: Low RDS(on) reduces conduction loss by >30% vs. legacy 5 mΩ devices, enabling smaller heatsinks and higher power density.

Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V isolated buck converter for telecom power shelf.

IC Role / Device Role / Timing Role: Secondary-side switch operating in synchronous rectification mode with precise gate timing control.

Use Value: Fast body diode recovery (trr = 41 ns) minimizes reverse recovery loss and EMI during dead-time transitions.

Industrial UPS Output StageEV Onboard Charger PFC Switch

Use Scenario: Output H-bridge in 3 kVA uninterruptible power supply delivering clean 230 VAC sine wave.

IC Role / Device Role / Timing Role: Hard-switched power switch handling peak currents up to 480 A in pulsed mode during overload conditions.

Use Value: 480 A pulsed rating and 192 mJ avalanche capability ensure fault tolerance during short-circuit events without desaturation protection.

Use Scenario: Boost switch in active PFC stage of 6.6 kW EV onboard charger operating at 65 kHz.

IC Role / Device Role / Timing Role: High-duty-cycle switching element with 68 nC total gate charge and low output capacitance (Coss = 1000 pF).

Use Value: Optimized Ciss/Coss ratio improves zero-voltage switching margin and reduces turn-on loss in transition-mode PFC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP036N06LGRDS(on) = 3.6 mΩ (higher), Qg = 52 nC (lower), same 60 V rating and TO-220 packageBetter switching efficiency but higher conduction loss; suited for medium-current, high-frequency PFCSelect when gate drive capability is limited and switching loss dominates system loss budget
IPB033N06N3RDS(on) = 3.3 mΩ, Qg = 72 nC, PG-TO263-3 surface-mount packageNo through-hole mounting; requires PCB reflow and thermal pad design; not mechanically interchangeableChoose only for new SMT-based designs where board space and automated assembly outweigh through-hole serviceability

Compared with IPP030N06NF2SAKMA1, IPP036N06LG trades conduction loss for easier gate driving, while IPB033N06N3 offers similar RDS(on) in a non-drop-in SMT form factor-making the original optimal for high-current, through-hole, thermally demanding applications.

Availability

IPP030N06NF2SAKMA1 is available at Aetrix Electronics and suitable for industrial motor drives, 48 V DC-DC power conversion, and UPS output stages requiring stable component supply and long-term production continuity.

Supply support for IPP030N06NF2SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™2 family-designed specifically for high-current, high-efficiency power switching in industrial, renewable energy, and e-mobility applications where ruggedness and thermal performance are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, and the device is rated for continuous operation up to this limit when case temperature is maintained at or below 175 °C via proper heatsinking. Thermal derating applies above TC = 25 °C per Figure 2 in the datasheet, with full current capability retained only when TC ≤ 100 °C under standard cooling conditions.

Is the drain tab electrically isolated from the package leads?

No-the drain (Pin 2) and metal tab are internally connected and electrically identical. The tab must be electrically isolated from the heatsink or chassis unless the drain node is referenced to system ground. Insulating pads or shoulder washers are required when mounting to grounded heatsinks.

Does this MOSFET support gate drive voltages below 10 V?

Yes-it is a normal-level device with VGS(th) = 2.1–3.3 V, and it conducts at VGS = 4.5 V (RDS(on) ≈ 5.5 mΩ). However, full enhancement and specified RDS(on) = 3.05 mΩ require VGS = 10 V. Operation at 5–8 V is feasible but increases conduction loss and thermal stress.

Can IPP030N06NF2SAKMA1 replace IPP030N06N3 in existing designs?

Yes-both share identical pinout, package (PG-TO220-3), and core specifications (60 V, ~3.0 mΩ, 120 A). The F2 suffix indicates enhanced avalanche ruggedness and updated process; no layout or drive circuit changes are needed, and reliability improves under inductive switching stress.

IPP030N06NF2SAKMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
StrongIRFET™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
26A (Ta), 119A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
3.05mOhm @ 70A, 10V
Vgs(th) (Max) @ Id:
3.3V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:
102 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4600 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-U05

IPP030N06NF2SAKMA1 FAQ

1.How can I place an order for IPP030N06NF2SAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP030N06NF2SAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP030N06NF2SAKMA1 reliable?

The price and inventory of IPP030N06NF2SAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP030N06NF2SAKMA1 is usually 5 days.

3.What payment methods are accepted for IPP030N06NF2SAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP030N06NF2SAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP030N06NF2SAKMA1?

IPP030N06NF2SAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP030N06NF2SAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP030N06NF2SAKMA1?

For technical support, including IPP030N06NF2SAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP030N06NF2SAKMA1 requirements.

6.How does Aetrix verify that IPP030N06NF2SAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPP030N06NF2SAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP030N06NF2SAKMA1 meets industry standards.

7.What is the process for return or replacement of IPP030N06NF2SAKMA1?

All IPP030N06NF2SAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP030N06NF2SAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP030N06NF2SAKMA1 part is unused and in its original packaging.

Return procedure for IPP030N06NF2SAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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