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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP032N06N3GXKSA1

Name: IPP032N06N3GXKSA1
Brand: Infineon Technologies
SKU: IPP032N06N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP032N06N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP032N06N3GXKSA1.pdf

Description:: MOSFET N-CH 60V 120A TO220-3

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Product details

Overview

IPP032N06N3GXKSA1 from Infineon Technologies is a 60 V, 100 A, 3.2 mΩ N-channel enhancement-mode MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (34 nC) and fast switching (turn-on delay 15 ns). It features avalanche-rated ruggedness, logic-level gate drive compatibility (V_GS(th) = 2.0–3.0 V), and is qualified per AEC-Q101 for automotive power stages.

For engineers reviewing the IPP032N06N3GXKSA1 datasheet, IPP032N06N3GXKSA1 pinout, IPP032N06N3GXKSA1 application, or IPP032N06N3GXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V, pulsed current capability (I_D,pulse = 400 A), thermal resistance (R_thJC = 0.5 K/W), and gate charge profile for PWM frequency optimization up to 500 kHz.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering low conduction loss via reduced specific on-resistance (R_DS(on) × area) and minimized gate-to-drain charge (Q_gd = 11 nC) for hard-switched topologies. Its vertical power trench structure supports unclamped inductive switching (UIS) with E_AS = 470 mJ at T_j = 25°C.

The device operates in enhancement mode with normally-off behavior, requiring positive V_GS ≥ 4.5 V for full enhancement. Its integrated body diode exhibits t_rr = 51 ns and Q_rr = 98 nC at I_F = 50 A, enabling synchronous rectification in buck converters without external Schottky replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; supports 48 V nominal bus systems with 20% margin for transients.
R_DS(on) max @ V_GS = 10 V	3.2 mΩ - Enables <1.6 W conduction loss at 70 A DC, critical for high-current motor phase legs.
I_D continuous @ T_C = 25°C	100 A - Sustained current rating with TO-220 heatsink; derates to 60 A at T_C = 100°C.
Q_g total	34 nC - Low gate charge reduces driver power demand and enables efficient 200–500 kHz PWM operation.
E_AS	470 mJ - Rated single-pulse avalanche energy ensures robustness against inductive kickback in H-bridge fault conditions.
R_thJC	0.5 K/W - Junction-to-case thermal resistance allows direct mounting to aluminum heatsinks for thermal management in compact inverters.
t_rr of body diode	51 ns - Fast reverse recovery minimizes shoot-through risk and conduction loss in synchronous rectification.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free plating, RoHS compliant).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; electrically connected to tab; must be tied to PCB ground plane for thermal and EMI control.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate; requires 10–15 V drive for full enhancement; sensitive to ESD (HBM 2 kV).
Pin 3 (Drain)	Power output (D)	High-current drain connection; tab is internally bonded to drain; requires insulated mounting when heatsink is grounded.

Key Features

Feature	Design Value
Avalanche-rated ruggedness	Single-pulse E_AS = 470 mJ ensures reliable operation under inductive load switching faults without external snubbers.
Logic-level gate drive	V_GS(th) = 2.0–3.0 V enables direct interface with 3.3 V/5 V microcontrollers, eliminating level-shifting circuitry.
Optimized gate charge ratio	Q_gd/Q_g = 32% minimizes Miller plateau duration, reducing switching transition time and dv/dt-induced noise.
Enhanced thermal performance	0.5 K/W R_thJC supports >120 W continuous dissipation with standard TO-220 heatsink (10 cm², 1 mm Al).
Qualified per AEC-Q101	Stress-tested for automotive temperature cycling (-55°C to +175°C), humidity, and mechanical shock per Grade 0 requirements.

Applications

Automotive HVAC Blower Control

Industrial 48 V DC-DC Converters

Use Scenario: High-side switch in 48 V HVAC blower motor drives with PWM frequencies up to 25 kHz.

IC Role / Device Role / Timing Role: Power switch in half-bridge topology; handles 80 A peak motor current with <100 ns dead-time tolerance.

Use Value: 3.2 mΩ R_DS(on) cuts conduction loss by 35% vs. legacy 5 mΩ MOSFETs, extending motor runtime and reducing heatsink size.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V LLC resonant converter for telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier; body diode used during zero-voltage switching transitions.

Use Value: 51 ns t_rr prevents reverse recovery oscillation, enabling stable 300 kHz operation without added damping components.

Onboard EV Charger Inverter Stage

Server PSU Primary Switch

Use Scenario: Phase-leg switch in 3-phase inverter for 6.6 kW AC-to-DC onboard EV chargers.

IC Role / Device Role / Timing Role: Low-side switch in SiC hybrid inverter; commutates 100 A RMS with 10 µs turn-off time.

Use Value: 34 nC Q_g reduces gate driver losses by 42% versus comparable 4.5 mΩ devices, improving system efficiency above 96%.

Use Scenario: Primary-side switch in 1.5 kW server power supply using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: High-current main switch handling 90 A pulsed drain current at 100 kHz switching frequency.

Use Value: 400 A I_D,pulse rating supports surge currents during cold-start, eliminating need for parallel devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB032N06N3 G	R_DS(on) = 3.2 mΩ (same), but in PG-TO263-3 package; R_thJC = 0.7 K/W; lower I_D,pulse = 320 A.	Suitable for surface-mount PCBs with limited height; less effective thermal dissipation than TO-220 in forced-air environments.	Select for automated assembly where through-hole mounting is unavailable; verify heatsink interface for 15% higher junction temperature rise.
IPP040N06N3 G	R_DS(on) = 4.0 mΩ (25% higher); same package; Q_g = 28 nC; E_AS = 390 mJ (17% lower).	Lower cost alternative for non-automotive applications where 10 A current headroom and 80 mJ avalanche margin are acceptable.	Choose when BOM cost sensitivity outweighs 0.5% system efficiency gain; not recommended for AEC-Q101-requiring designs.

Compared with IPB032N06N3 G, IPP032N06N3GXKSA1 offers superior thermal performance and pulse current capability due to its TO-220 package and qualification grade, while IPP040N06N3 G trades conduction loss for cost reduction in non-automotive industrial use cases.

Availability

IPP032N06N3GXKSA1 is available at Aetrix Electronics and suitable for automotive HVAC systems, industrial 48 V DC-DC converters, and onboard EV charger inverters requiring stable component supply and long-term lifecycle support.

Supply support for IPP032N06N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-efficiency, high-current switching in automotive and industrial power conversion systems operating up to 175°C junction temperature.

FAQ

What is the maximum allowable gate-source voltage for IPP032N06N3GXKSA1?

The absolute maximum V_GS is ±20 V per datasheet Section 6.1. Operation beyond ±16 V risks permanent gate oxide damage. Recommended drive range is 10–15 V for full enhancement with margin; gate resistors should limit dV/dt to ≤5 V/ns during switching to prevent parasitic turn-on.

Does IPP032N06N3GXKSA1 require a gate resistor, and what value is recommended?

Yes - a series gate resistor (R_G) is mandatory to control switching speed and suppress ringing. For 100 kHz PWM with 3.3 V MCU drive, R_G = 10 Ω is typical; for 500 kHz with dedicated gate driver, 4.7 Ω balances switching loss and EMI. Layout must minimize gate loop inductance (<5 nH) to avoid oscillation.

Can IPP032N06N3GXKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables current sharing across paralleled units. Use matched devices (same date code), identical PCB trace lengths, and individual gate resistors (≤5 Ω) to ensure balanced turn-on. Derate total current by 15% for thermal coupling effects in shared heatsinks.

Is the drain tab electrically isolated from the package mount surface?

No - the drain is internally connected to the metal tab in PG-TO220-3. When mounted to a grounded heatsink, electrical isolation (e.g., mica washer + thermal paste) is required to prevent short circuits. Insulated mounting kits meeting UL 94 V-0 are recommended for safety-critical automotive applications.

IPP032N06N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 118µA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP032N06N3GXKSA1 FAQ

1.How can I place an order for IPP032N06N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP032N06N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP032N06N3GXKSA1 reliable?

The price and inventory of IPP032N06N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP032N06N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP032N06N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP032N06N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP032N06N3GXKSA1?

IPP032N06N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP032N06N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP032N06N3GXKSA1?

For technical support, including IPP032N06N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP032N06N3GXKSA1 requirements.

6.How does Aetrix verify that IPP032N06N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP032N06N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP032N06N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP032N06N3GXKSA1?

All IPP032N06N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP032N06N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP032N06N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP032N06N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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