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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP040N08NF2SAKMA1

Name: IPP040N08NF2SAKMA1
Brand: Infineon Technologies
SKU: IPP040N08NF2SAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP040N08NF2SAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP040N08NF2SAKMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP040N08NF2SAKMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-current DC-DC conversion and motor control. It delivers 80 V V_DS, 4.0 mΩ R_DS(on) max at V_GS = 10 V, 115 A continuous drain current at T_C = 25 °C, and 100% avalanche tested for ruggedness in hard-switching industrial inverters.

For engineers reviewing the IPP040N08NF2SAKMA1 datasheet, IPP040N08NF2SAKMA1 pinout, IPP040N08NF2SAKMA1 application, or IPP040N08NF2SAKMA1 equivalent, key selection criteria include its low Q_g (54 nC), low Q_oss (65 nC), strong body diode (t_rr = 33 ns), and thermal resistance R_thJC = 1 °C/W - critical for high-efficiency, thermally constrained power stages.

Technical Context

This StrongIRFET™ 2 device uses trench-gate field-stop superjunction technology to achieve ultra-low conduction loss while maintaining fast switching performance. Its gate threshold voltage (2.2–3.8 V) enables robust drive with standard 5 V or 10 V logic-level controllers, and its 175 °C maximum junction temperature supports operation in sealed enclosures without forced cooling.

The MOSFET integrates a low-V_SD (0.95 V typ. at 80 A) intrinsic body diode with controlled reverse recovery (Q_rr = 189 nC), making it suitable for synchronous rectification and freewheeling paths where diode commutation stress must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V nominal bus systems with 2× safety margin against transients
R_DS(on) max	4.0 mΩ at V_GS = 10 V - enables ≤0.37 W conduction loss at 95 A, reducing heatsink requirements
I_D continuous	115 A at T_C = 25 °C - sustains high-power motor phase currents without derating on standard TO-220 heatsinks
Q_g	54 nC - allows efficient gate driving with <1 W driver loss at 100 kHz switching
E_AS	119 mJ - withstands single-pulse inductive energy in 24–48 V solenoid or relay drivers
R_thJC	1 °C/W - permits direct mounting to aluminum heatsinks with predictable thermal rise under full load
t_rr	33 ns - minimizes diode switching loss and EMI during hard-commutation in half-bridge topologies

Pinout & Package

Package: PG-TO220-3 (lead-free, RoHS-compliant, halogen-free), with electrically isolated tab connected to Drain (Pin 2). Mounting requires thermal interface material and mechanical clamping per Infineon's TO-220 mounting guidelines.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives gate drive signal; low C_iss (3800 pF) reduces Miller effect and improves noise immunity
Pin 2 (Drain) / Tab	High-side power node	Tab is electrically connected to Drain; serves as primary heat path and high-current return path
Pin 3 (Source)	Reference node	Provides ground reference for gate drive and current sensing; low-inductance layout essential for stability

Key Features

Feature	Design Value
100% avalanche rated	Guarantees survivability under unclamped inductive switching events up to 119 mJ without parameter shift
Optimized for 6–10 V gate drive	Ensures full enhancement at standard microcontroller or gate driver output levels, eliminating need for level shifters
Low Q_oss/Q_g ratio (1.2)	Reduces turn-off loss and improves light-load efficiency in resonant and soft-switching converters
Strong body diode with t_rr < 35 ns	Enables reliable synchronous rectification in buck converters and bidirectional DC-DC stages
JEDEC-qualified reliability	Validated for automotive-grade temperature cycling and humidity exposure per AEC-Q101 stress test plan

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter Primary Switch

Use Scenario: High-current 3-phase BLDC inverter for HVAC compressors operating at 48 V bus and 20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack IGBT/MOSFET module replacement, handling peak phase currents >90 A.

Use Value: 4.0 mΩ R_DS(on) cuts conduction loss by 35% vs. legacy 6.5 mΩ devices, enabling passive cooling in space-constrained enclosures.

Use Scenario: Primary-side switch in 1 kW isolated flyback converter for factory automation PLC power supplies.

IC Role / Device Role / Timing Role: Hard-switched main power transistor with 100 kHz operation and 40 V V_DS stress.

Use Value: 65 nC Q_oss limits capacitive turn-on loss, improving full-load efficiency to >92% without snubbers.

Solenoid & Relay Driver

Onboard Charger (OBC) Bidirectional Switch

Use Scenario: 24 V/48 V high-reliability solenoid actuator driver in railway signaling cabinets with ambient up to 70 °C.

IC Role / Device Role / Timing Role: Single-ended switch controlling 80 A inductive loads with integrated freewheeling path.

Use Value: 119 mJ E_AS rating eliminates external TVS clamping, simplifying BOM and improving MTBF.

Use Scenario: Bidirectional AC/DC and DC/AC switch in 3.3 kW OBC using dual-active-bridge topology.

IC Role / Device Role / Timing Role: Synchronous rectifier and reverse conduction switch in secondary-side H-bridge.

Use Value: 33 ns t_rr and 189 nC Q_rr reduce reverse recovery loss and EMI, meeting CISPR-25 Class 5 limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N8F6	R_DS(on) = 4.3 mΩ, Q_g = 62 nC, no avalanche rating specified	Lacks guaranteed E_AS spec; requires external clamping in inductive loads	Prefer when cost sensitivity outweighs ruggedness requirements and layout allows TVS protection
IRFP4368PbF	R_DS(on) = 3.8 mΩ, Q_g = 76 nC, TO-247 package, higher C_iss	Larger footprint and higher gate drive loss limit use in compact 100 kHz designs	Choose only if board real estate permits TO-247 and thermal budget allows higher Q_g-related losses

Compared with STP110N8F6 and IRFP4368PbF, IPP040N08NF2SAKMA1 offers the best balance of low R_DS(on), low Q_g, certified avalanche ruggedness, and TO-220 manufacturability - making it optimal for high-volume industrial power modules where reliability and assembly yield are prioritized.

Availability

IPP040N08NF2SAKMA1 is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and solenoid/relay drivers requiring stable component supply across multi-year production cycles.

Supply support for IPP040N08NF2SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and sensor solutions, with over 30 years of high-reliability power device innovation.

This part belongs to the StrongIRFET™ 2 family, engineered specifically for high-current, high-efficiency industrial switching applications where low R_DS(on), fast switching, and ruggedness under transient stress are mandatory.

FAQ

What is the maximum safe operating junction temperature for IPP040N08NF2SAKMA1?

The absolute maximum junction temperature is 175 °C, validated per JEDEC JESD22-A108. Continuous operation at this temperature requires thermal design ensuring case temperature remains ≤125 °C, given R_thJC = 1 °C/W and power dissipation limits shown in Diagram 1 of the datasheet.

Can IPP040N08NF2SAKMA1 be driven directly from a 3.3 V microcontroller GPIO?

No - its V_GS(th) range (2.2–3.8 V) means a 3.3 V drive may result in incomplete turn-on and excessive R_DS(on). A dedicated gate driver (e.g., 1EDN7512B) supplying ≥5 V with ≥2 A peak current is required to ensure full enhancement and minimize switching loss.

Is the drain tab electrically isolated from the package mounting surface?

No - the metal tab is internally connected to Pin 2 (Drain) and is not insulated. Electrical isolation must be achieved externally using insulating shoulder washers and non-conductive thermal pads when mounting to grounded heatsinks.

Does IPP040N08NF2SAKMA1 support paralleling for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (see Diagram 9) ensures inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (≥5 Ω) to suppress oscillation and ensure simultaneous switching.

IPP040N08NF2SAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 115A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP040N08NF2SAKMA1 FAQ

1.How can I place an order for IPP040N08NF2SAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP040N08NF2SAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP040N08NF2SAKMA1 reliable?

The price and inventory of IPP040N08NF2SAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP040N08NF2SAKMA1 is usually 5 days.

3.What payment methods are accepted for IPP040N08NF2SAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP040N08NF2SAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP040N08NF2SAKMA1?

IPP040N08NF2SAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP040N08NF2SAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP040N08NF2SAKMA1?

For technical support, including IPP040N08NF2SAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP040N08NF2SAKMA1 requirements.

6.How does Aetrix verify that IPP040N08NF2SAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPP040N08NF2SAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP040N08NF2SAKMA1 meets industry standards.

7.What is the process for return or replacement of IPP040N08NF2SAKMA1?

All IPP040N08NF2SAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP040N08NF2SAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP040N08NF2SAKMA1 part is unused and in its original packaging.

Return procedure for IPP040N08NF2SAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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