Infineon Technologies IPP041N04NGXKSA1

Overview

IPP041N04NGXKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, rated for 40 V V_DS, 4.1 mΩ R_DS(on) max at V_GS = 10 V and I_D = 80 A, 100% avalanche tested, and optimized for high-efficiency DC/DC converters and SMPS primary-side switching.

For engineers reviewing the IPP041N04NGXKSA1 datasheet, IPP041N04NGXKSA1 pinout, IPP041N04NGXKSA1 application, or IPP041N04NGXKSA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), 42–56 nC total gate charge, 1.6 K/W junction-to-case thermal resistance, and integrated robust body diode with Q_rr = 46 nC.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 4 technology, delivering fast switching with t_r = 3.8 ns and t_f = 4.8 ns under standard test conditions. Its gate plateau voltage is 5.1 V, supporting reliable turn-on with standard 5 V or 10 V logic-level drive.

The device features a thermally enhanced TO-220-3 package with drain-connected tab, enabling direct heatsinking. Its R_DS(on) remains stable across –55 °C to 175 °C, and it meets JEDEC J-STD-20/JESD22 reliability standards for industrial power applications.

Key Specifications

Pinout & Package

IPP041N04NGXKSA1 uses the PG-TO220-3 package (standard through-hole variant), with drain connected to the metal tab for thermal and electrical integration. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with IPB041N04NG and IRL40B215, IPP041N04NGXKSA1 offers superior thermal interface via TO-220 tab, guaranteed avalanche capability for robustness, and balanced FOM-making it optimal for high-reliability, medium-to-high power industrial and telecom power stages where manual serviceability and proven ruggedness matter.

Availability

IPP041N04NGXKSA1 is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC/DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP041N04NGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's OptiMOS™ 4 product line, engineered specifically for high-frequency, high-efficiency power conversion in datacenter, telecom, and industrial SMPS applications where low R_DS(on), low gate charge, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPP041N04NGXKSA1 supports 80 A continuous drain current at both T_C = 25 °C and T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low R_DS(on) temperature coefficient, enabling stable high-current operation without derating up to 100 °C case temperature.

Is this MOSFET suitable for synchronous rectification in a 48 V to 12 V LLC converter?

Yes - its 40 V V_DS rating, 0.96–1.2 V body diode forward voltage, and low 46 nC Q_rr make it well-suited for secondary-side synchronous rectification in 48 V input LLC converters. The low R_DS(on) further reduces conduction loss compared to Schottky diodes, especially above 10 A load current.

Does the PG-TO220-3 package require insulating hardware when mounted to a heatsink?

Yes - the drain is internally connected to the metal tab, so electrical isolation (e.g., mica washer or silicone pad) and insulated mounting hardware are required unless the heatsink is intentionally held at drain potential. Failure to isolate may cause short circuits in grounded-system configurations.

How does the 100% avalanche testing impact reliability in flyback converter designs?

100% single-pulse avalanche testing to 60 mJ ensures each unit can withstand unclamped inductive energy during MOSFET turn-off in flyback transformers. This eliminates field failures due to voltage overshoot and removes the need for conservative voltage derating or external clamping circuits in cost-sensitive consumer and industrial flyback SMPS.