Infineon Technologies IPP050N10NF2SAKMA1

Overview

IPP050N10NF2SAKMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO220-3 package, designed for high-current DC-DC conversion and motor drive switching. It delivers 110 A continuous drain current at TC=25 °C, 5.0 mΩ max RDS(on) at VGS=10 V, and 100 V VDS rating, with 100% avalanche tested ruggedness for industrial power stages.

For engineers reviewing the IPP050N10NF2SAKMA1 datasheet, IPP050N10NF2SAKMA1 pinout, IPP050N10NF2SAKMA1 application, or IPP050N10NF2SAKMA1 equivalent, key selection criteria include its low Qg (51 nC), low Qoss (67 nC), strong thermal performance (RthJC = 1 °C/W), and robust reverse diode (VSD = 0.92 V @ 60 A, trr = 37 ns).

Technical Context

This StrongIRFET™ 2 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching and high avalanche energy (EAS = 100 mJ). Its gate threshold voltage (VGS(th) = 2.2–3.8 V) ensures reliable turn-on with standard 5 V or 10 V logic drivers.

The MOSFET integrates a co-packaged body diode with low forward voltage and fast recovery (Qrr = 247 nC, trr = 37 ns), enabling efficient synchronous rectification and freewheeling in hard-switched topologies. Thermal design is supported by a low junction-to-case resistance (1 °C/W) and validated JEDEC qualification.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (plastic through-hole, isolated tab, lead-free, RoHS-compliant). Tab is electrically connected to Drain (Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with STP110N10F7 and IXFH110N10L2, IPP050N10NF2SAKMA1 offers best-in-class avalanche ruggedness and lowest Qoss for high-frequency hard-switching, while maintaining TO-220 manufacturability and thermal performance.

Availability

IPP050N10NF2SAKMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for IPP050N10NF2SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification.

This part belongs to the StrongIRFET™ 2 family-engineered for high-efficiency, high-reliability power conversion in demanding industrial and renewable energy systems, emphasizing ruggedness, low loss, and thermal stability.

FAQ

Is IPP050N10NF2SAKMA1 suitable for synchronous rectification in a 500 kHz LLC resonant converter?

Yes. With Qoss = 67 nC and trr = 37 ns, it supports ZVS operation up to 600 kHz in secondary-side rectification. Its low RDS(on) minimizes conduction loss at high RMS currents, and the integrated diode's soft recovery reduces EMI. Gate plateau voltage of 4.7 V ensures stable turn-on timing under variable load conditions.

What is the maximum allowable case temperature for continuous 110 A operation?

The 110 A rating applies strictly at TC = 25 °C. At TC = 100 °C, the datasheet specifies ID = 78 A (VGS = 6 V) or 85 A (VGS = 10 V). Derating follows Diagram 2: ID decreases linearly to ~40 A at TC = 150 °C. Sustained 110 A requires active cooling to maintain TC ≤ 35 °C.

Does the PG-TO220-3 package provide electrical isolation between the tab and pins?

No. The metal tab is internally connected to Pin 2 (Drain) and is not electrically isolated. Mounting requires insulating hardware (e.g., silicone pad + shoulder washer) if the heatsink is grounded or at a different potential than the drain node.

How does the 100% avalanche test impact system-level reliability in motor drive applications?

Each unit undergoes single-pulse avalanche stress at EAS = 100 mJ, verifying ability to absorb inductive energy during short-circuit or rapid deceleration events. This eliminates field failures from unclamped inductive kickback, reducing need for external TVS or RCD snubbers in Class A industrial drives.