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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP114N12N3GXKSA1

Name: IPP114N12N3GXKSA1
Brand: Infineon Technologies
SKU: IPP114N12N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP114N12N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP114N12N3GXKSA1.pdf

Description:: MOSFET N-CH 120V 75A TO220-3

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Product details

Overview

IPP114N12N3GXKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO220-3 package, rated for 120 V V_DS, 11.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 75 A, with 175 °C maximum junction temperature. It delivers high-frequency switching efficiency and low conduction loss in DC-DC converters and synchronous rectifiers.

For engineers reviewing the IPP114N12N3GXKSA1 datasheet, IPP114N12N3GXKSA1 pinout, IPP114N12N3GXKSA1 application, or IPP114N12N3GXKSA1 equivalent, key selection criteria include gate charge (Q_g = 49–65 nC), thermal resistance (R_thJC = 1.1 K/W), avalanche energy (E_AS = 120 mJ), and diode reverse recovery performance (t_rr = 116 ns, Q_rr = 232 nC).

Technical Context

This MOSFET employs Infineon's OptiMOSTM3 process to optimize the gate charge × R_DS(on) figure-of-merit (FOM) for high-efficiency power conversion. Its low R_DS(on) and fast switching parameters-including t_r = 36 ns and t_f = 7 ns-support operation in hard-switched and resonant topologies up to several hundred kHz.

The integrated body diode features low forward voltage (V_SD = 1.0–1.2 V at I_F = 75 A, T_j = 25 °C) and controlled reverse recovery (Q_rr = 232 nC), enabling reliable synchronous rectification without external Schottky diodes in mid-power SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	120 V - supports 48 V input bus systems with 2.5× safety margin against transients
R_DS(on) max	11.4 mΩ at V_GS = 10 V, I_D = 75 A - enables <1.2 W conduction loss at full load in 75 A applications
Q_g	49–65 nC - determines gate drive power requirement and switching speed in PWM controllers
E_AS	120 mJ - withstands single-pulse inductive energy without failure in motor drives or DC-DC output stages
t_rr / Q_rr	116 ns / 232 nC - minimizes diode switching loss and EMI during freewheeling in synchronous buck converters
R_thJC	1.1 K/W - allows direct heatsink mounting for thermal management in industrial power supplies
I_D continuous	75 A at T_C = 25 °C - defines maximum steady-state current with adequate PCB copper area (6 cm² drain pad)

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS/halogen-free compliant). Tab is electrically connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path and PCB ground plane
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <65 nC charge for full enhancement; sensitive to ESD
Pin 3 (Drain)	Power output / high-side connection	Internally bonded to metal tab; must be mounted to heatsink with electrical isolation if needed

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	~555 mΩ·nC - balances switching loss and conduction loss for 100–300 kHz operation
175 °C rated junction temperature	Enables operation in sealed enclosures or high-ambient environments without derating below 125 °C
Low gate threshold (V_GS(th) = 2–4 V)	Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for automotive and industrial temperature cycling and humidity exposure
Integrated robust body diode	Rated for 75 A continuous forward current and 300 A pulsed current - eliminates need for external anti-parallel diode in half-bridge configurations

Applications

Server VRM

Industrial UPS

Use Scenario: High-current, high-efficiency 12 V input-to-core-voltage regulation in dual-phase CPU VRMs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck converter stage.

Use Value: 11.4 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 20 mΩ devices, improving system efficiency at 60–80 A loads.

Use Scenario: Bidirectional DC-DC stage in online double-conversion UPS systems with battery backup.

IC Role / Device Role / Timing Role: Primary-side switch in isolated LLC resonant converter operating at 200–300 kHz.

Use Value: 120 mJ avalanche energy rating ensures robustness during line surges and battery reconnection events.

Solar Microinverter

EV Onboard Charger

Use Scenario: DC-AC H-bridge output stage in single-phase transformerless microinverters (200–400 V DC input).

IC Role / Device Role / Timing Role: High-side and low-side switching element in full-bridge topology with active clamp.

Use Value: 175 °C T_jmax and low C_oss (543 pF) enable stable operation under solar field ambient extremes and reduce switching loss at 50–100 kHz.

Use Scenario: Secondary-side synchronous rectification in 3.3 kW AC/DC stage of bidirectional OBC (650 V DC link).

IC Role / Device Role / Timing Role: Low-loss freewheeling device replacing Schottky diodes in center-tapped LLC rectifier.

Use Value: Body diode Q_rr = 232 nC and t_rr = 116 ns minimize reverse recovery loss and EMI, improving efficiency by ~0.8% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N12F7	R_DS(on) = 11.5 mΩ, Q_g = 62 nC, R_thJC = 1.2 K/W, same PG-TO220-3 package	Higher gate charge increases driver loss; slightly lower thermal performance	Preferred where gate drive capability exceeds 1 A peak and heatsink design accommodates +0.1 K/W rise
IRFP4110PBF	R_DS(on) = 12.5 mΩ, Q_g = 120 nC, R_thJC = 1.0 K/W, TO-247 package	Larger footprint, higher Q_g limits usable frequency; better thermal resistance but less space-efficient	Selected when board layout permits TO-247 and thermal budget prioritizes junction-to-case over gate drive efficiency

Compared with STP110N12F7 and IRFP4110PBF, IPP114N12N3GXKSA1 offers the lowest combined switching-conduction loss (via best-in-class FOM) and highest temperature rating in a compact TO220 form factor-making it optimal for space-constrained, high-efficiency 100–300 kHz power stages.

Availability

IPP114N12N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial UPS systems, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPP114N12N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOSTM3 family-designed specifically for high-efficiency, high-frequency power conversion in server, industrial, and renewable energy applications where low R_DS(on) and optimized gate charge are critical.

FAQ

Is IPP114N12N3GXKSA1 suitable for logic-level gate drive?

Yes. With a gate threshold voltage V_GS(th) of 2–4 V and full enhancement at V_GS ≥ 10 V, it operates reliably with standard 5 V or 3.3 V logic-level drivers. However, gate drive voltage must reach ≥10 V to achieve rated R_DS(on); using only 5 V results in significantly higher on-resistance (~25–30 mΩ).

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies optimal thermal performance with a 40 mm × 40 mm × 1.5 mm FR4 PCB having 6 cm² of 70 µm-thick copper on the drain pad, mounted vertically in still air. Reducing copper area below 6 cm² increases R_thJA to 62 K/W, limiting safe continuous current to ~35 A at T_C = 100 °C.

Does this MOSFET include avalanche ruggedness testing?

Yes. It is fully specified for single-pulse avalanche energy E_AS = 120 mJ at I_D = 75 A and R_GS = 25 Ω, and qualified per JEDEC standards for repetitive stress. This rating applies to inductive turn-off events in DC-DC converters and motor drives, not sustained avalanche operation.

Can the body diode be used for synchronous rectification in continuous conduction mode?

Yes. The body diode is characterized for 75 A continuous forward current and exhibits controlled reverse recovery (t_rr = 116 ns, Q_rr = 232 nC), making it suitable for synchronous rectification in CCM buck and LLC converters. Gate timing must ensure zero-voltage switching or soft turn-on to avoid diode commutation loss spikes.

IPP114N12N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11.4mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4310 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP114N12N3GXKSA1 FAQ

1.How can I place an order for IPP114N12N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP114N12N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP114N12N3GXKSA1 reliable?

The price and inventory of IPP114N12N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP114N12N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP114N12N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP114N12N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP114N12N3GXKSA1?

IPP114N12N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP114N12N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP114N12N3GXKSA1?

For technical support, including IPP114N12N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP114N12N3GXKSA1 requirements.

6.How does Aetrix verify that IPP114N12N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP114N12N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP114N12N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP114N12N3GXKSA1?

All IPP114N12N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP114N12N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP114N12N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP114N12N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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