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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP12CN10LGXKSA1

Name: IPP12CN10LGXKSA1
Brand: Infineon Technologies
SKU: IPP12CN10LGXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP12CN10LGXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP12CN10LGXKSA1.pdf

Description:: MOSFET N-CH 100V 69A TO220-3

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Product details

Overview

IPP12CN10LGXKSA1 from Infineon Technologies is an N-channel logic-level Power MOSFET in PG-TO220-3 package, rated for 100 V V_DS, 12 mΩ R_DS(on) at V_GS = 10 V and I_D = 69 A, with 175 °C maximum junction temperature. It delivers high-frequency switching efficiency and synchronous rectification capability in DC-DC converters and motor drives.

For engineers reviewing the IPP12CN10LGXKSA1 datasheet, IPP12CN10LGXKSA1 pinout, IPP12CN10LGXKSA1 application, or IPP12CN10LGXKSA1 equivalent, key selection criteria include its 9.9–12 mΩ R_DS(on) at 10 V gate drive, 58 nC total gate charge, 4210 pF input capacitance, and JEDEC-qualified reliability for industrial power stages.

Technical Context

This OptiMOS®2 device uses planar silicon technology optimized for low gate charge × R_DS(on) figure-of-merit (FOM), enabling reduced conduction and switching losses in hard-switched topologies. Its logic-level gate threshold (1.2–2.4 V) ensures full enhancement with standard 3.3 V/5 V microcontroller outputs.

The integrated body diode supports synchronous rectification with 101 ns reverse recovery time and 193 nC Q_rr, while the 1.2 K/W R_thJC thermal resistance enables high-power dissipation (125 W at T_C = 25 °C) in compact heatsink designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with 2× safety margin
R_DS(on) max	12 mΩ @ V_GS = 10 V, I_D = 69 A - enables <1.2 W conduction loss at 69 A
I_D continuous	69 A @ T_C = 25 °C - suitable for high-current output stages without forced air
Q_g total	58 nC - determines gate driver current requirement (~1.2 A avg for 50 ns rise)
C_iss	4210–5600 pF - impacts EMI filtering design and gate drive loop stability
T_j max	175 °C - allows operation in sealed enclosures or high ambient environments
E_AS	150 mJ - withstands single-pulse inductive energy without failure

Pinout & Package

Package: PG-TO220-3 - through-hole, isolated drain tab, standard mounting with M3 screw, 1.2 K/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node
Pin 2 (Gate)	Control input	Logic-level compatible; requires <20 V absolute max rating
Pin 3 (Drain)	Power output / high-side connection	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to same potential

Key Features

Feature	Design Value
N-channel logic-level gate	Threshold voltage 1.2–2.4 V - enables direct drive from 3.3 V MCU GPIO without level-shifting
Low R_DS(on) × Q_g FOM	~118 Ω·nC - reduces combined conduction + switching loss in 100–500 kHz SMPS
High avalanche ruggedness	150 mJ single-pulse E_AS - sustains unclamped inductive turn-off in motor gate drivers
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 - validated for industrial temperature cycling and humidity exposure
Integrated fast body diode	t_rr = 101 ns, Q_rr = 193 nC - supports synchronous rectification in buck converters with <5% efficiency penalty vs. Schottky

Applications

DC-DC Buck Converter

BLDC Motor Inverter Stage

Use Scenario: 48 V input to 12 V/30 A output in telecom power supply.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in two-phase interleaved buck.

Use Value: 12 mΩ R_DS(on) limits conduction loss to 1.1 W at 30 A, reducing thermal load on 25 mm heatsink.

Use Scenario: 3-phase inverter driving 500 W BLDC fan in HVAC system.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg, operating at 20 kHz PWM.

Use Value: 58 nC Q_g enables clean 50 ns turn-on with 1.5 A gate driver, minimizing shoot-through risk.

Industrial LED Driver

Hot-Swap Controller Protection

Use Scenario: Constant-current 36 V/10 A LED string driver with analog dimming.

IC Role / Device Role / Timing Role: Primary current-regulating switch in linear+PWM hybrid topology.

Use Value: 175 °C T_j,max allows operation at 95 °C ambient without derating, supporting sealed outdoor fixture design.

Use Scenario: 48 V hot-swap card with inrush limiting and fault isolation.

IC Role / Device Role / Timing Role: Main pass transistor in active OR-ing and current-limiting circuit.

Use Value: 100 V V_DS rating accommodates 48 V rail + 20 % transients, while 150 mJ E_AS absorbs surge during plug-in events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB12CN10L G	PG-TO263-3 package; identical R_DS(on), Q_g, and V_DS; 1.4 K/W R_thJC	Suitable for surface-mount PCB assembly; lower profile but higher thermal resistance	Select when automated SMT placement is required and board space is constrained over thermal margin.
IRF540NPBF	Higher R_DS(on) (44 mΩ), higher Q_g (71 nC), 100 V rating, TO-220AB package	Legacy part with slower switching; acceptable only in <100 kHz, non-synchronous designs	Choose only for cost-sensitive, low-frequency replacements where efficiency is secondary.

Compared with IPB12CN10L G and IRF540NPBF, IPP12CN10LGXKSA1 offers superior thermal performance (1.2 K/W vs. 1.4/2.0 K/W) and lowest switching loss envelope, making it optimal for high-density, high-efficiency 200–500 kHz power stages.

Availability

IPP12CN10LGXKSA1 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor inverters, industrial LED drivers, and hot-swap controllers requiring stable component supply across multi-year production cycles.

Supply support for IPP12CN10LGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS®2 family, engineered for high-efficiency, high-frequency power conversion in industrial and computing applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum gate-source voltage rating for IPP12CN10LGXKSA1?

The absolute maximum V_GS is ±20 V. Operation beyond this risks irreversible gate oxide damage. Recommended gate drive is 10 V for full enhancement and minimal R_DS(on), with 4.5 V sufficient for logic-level operation. Gate resistors should limit peak current to avoid ringing while ensuring t_r/t_f < 20 ns under typical conditions.

Does IPP12CN10LGXKSA1 have an integrated body diode, and what are its key parameters?

Yes, it features a monolithic fast-recovery body diode with 101 ns reverse recovery time (t_rr) and 193 nC reverse recovery charge (Q_rr) at I_F = 69 A, T_j = 25 °C. Forward voltage is 1.0–1.2 V at 69 A, enabling use in synchronous rectification without external diodes in buck or flyback topologies.

How does the thermal resistance of IPP12CN10LGXKSA1 impact heatsink selection?

With R_thJC = 1.2 K/W and P_tot = 125 W at T_C = 25 °C, a heatsink must maintain case temperature ≤85 °C to stay within 175 °C T_j limit at full load. For 69 A continuous, assuming 1.1 W conduction loss, a 15 K/W heatsink suffices with natural convection on a 6 cm² copper pad per Infineon's layout guidelines.

Is IPP12CN10LGXKSA1 suitable for avalanche-rated applications like inductive load switching?

Yes - it is fully specified for unclamped inductive switching with E_AS = 150 mJ at I_D = 69 A and R_GS = 25 Ω. This rating applies across the full -55 °C to 175 °C junction temperature range, making it appropriate for relay replacement, solenoid drivers, and motor phase-leg protection where transient energy absorption is required.

IPP12CN10LGXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 69A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 69A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5600 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP12CN10LGXKSA1 FAQ

1.How can I place an order for IPP12CN10LGXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP12CN10LGXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP12CN10LGXKSA1 reliable?

The price and inventory of IPP12CN10LGXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP12CN10LGXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP12CN10LGXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP12CN10LGXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP12CN10LGXKSA1?

IPP12CN10LGXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP12CN10LGXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP12CN10LGXKSA1?

For technical support, including IPP12CN10LGXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP12CN10LGXKSA1 requirements.

6.How does Aetrix verify that IPP12CN10LGXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP12CN10LGXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP12CN10LGXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP12CN10LGXKSA1?

All IPP12CN10LGXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP12CN10LGXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP12CN10LGXKSA1 part is unused and in its original packaging.

Return procedure for IPP12CN10LGXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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