Infineon Technologies IPP50R190CEXKSA1

Overview

IPP50R190CEXKSA1 from Infineon Technologies is a 500 V, 0.19 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in PG-TO220 package, optimized for hard-switching and resonant PFC/PWM stages in industrial SMPS. It delivers 24.8 A continuous drain current at T_C = 25°C, 47.2 nC total gate charge, and 4.42 µJ output energy at 400 V - enabling high-efficiency, compact 500–600 W server PSUs and LED drivers.

For engineers reviewing the IPP50R190CEXKSA1 datasheet, IPP50R190CEXKSA1 pinout, IPP50R190CEXKSA1 application, or IPP50R190CEXKSA1 equivalent, key selection criteria include its 550 V V_DS rating at T_j,max, 0.82 °C/W R_thJC, 50 V/ns dv/dt ruggedness, and JEDEC industrial-grade qualification - critical for reliable operation in high-voltage AC-DC front-ends.

Technical Context

This CoolMOS™ CE device implements a superjunction structure with optimized charge balance to achieve ultra-low FOM (R_DS(on) × Q_g = 8.95 Ω·nC) and E_oss (4.42 µJ @ 400 V), directly reducing conduction and switching losses in continuous conduction mode (CCM) PFC and fixed-frequency PWM converters. Its 5.4 V gate plateau voltage and 3 Ω intrinsic gate resistance simplify gate drive design without requiring negative turn-off bias.

The integrated body diode features 280 ns reverse recovery time and 3.2 µC Q_rr at 400 V/7.7 A, supporting robust commutation in bridge-leg configurations. Thermal performance is defined by 0.82 °C/W junction-to-case resistance and 62 °C/W junction-to-ambient rating under leaded conditions - enabling thermally constrained TO-220 layouts up to 152 W dissipation at T_C = 25°C.

Key Specifications

Pinout & Package

IPP50R190CEXKSA1 uses the PG-TO220 package (standard 3-pin through-hole outline), with tab-connected drain for direct thermal path to heatsink. Pin 1 is Gate, Pin 2 is Drain (tab), Pin 3 is Source - matching JEDEC TO-220AB mechanical standard and enabling drop-in replacement in legacy board designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP50R190CEXKSA1, the C7 revision offers lower R_DS(on) and Q_g for improved efficiency in new designs, while the IPW50R190CEFKSA1 provides superior thermal performance in TO-247 form factor - both retain identical voltage rating and ruggedness, making them functionally aligned but mechanically distinct alternatives.

Availability

IPP50R190CEXKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial LED drivers, and LCD TV backlight inverters requiring stable component supply and long-term industrial-grade availability.

Supply support for IPP50R190CEXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

This part belongs to the CoolMOS™ CE superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in industrial and computing power supplies - balancing cost, performance, and ease of use.

FAQ

What is the maximum continuous drain current for IPP50R190CEXKSA1 at 100°C case temperature?

The maximum continuous drain current is 15.7 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.2 datasheet. This derating reflects thermal limitations of the PG-TO220 package and ensures junction temperature remains below 150°C under steady-state operation with proper heatsinking.

Does IPP50R190CEXKSA1 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 2.5–3.5 V and operates reliably with 0 V to +13 V gate drive. Its 5.4 V gate plateau voltage and low Q_gd/Q_gs ratio ensure clean turn-off without negative bias, simplifying gate driver design in cost-sensitive applications.

Can IPP50R190CEXKSA1 replace standard planar MOSFETs in existing TO-220 designs?

Yes - it uses the standard PG-TO220 outline with identical pin assignment (G-D-S), mechanical dimensions, and mounting hole pattern. Electrical improvements (lower R_DS(on), Q_g, E_oss) typically yield immediate efficiency gains without layout changes.

What is the safe operating area (SOA) limitation at 100 V V_DS and 25°C case temperature?

At V_DS = 100 V and T_C = 25°C, the SOA supports continuous DC operation up to 24.8 A (per Diagram 2). For pulse widths ≤100 µs, it sustains up to 63 A, limited by peak junction temperature rise rather than secondary breakdown - consistent with superjunction architecture behavior.