Infineon Technologies IPP50R380CEXKSA1

Overview

IPP50R380CEXKSA1 from Infineon Technologies is a 500 V, 0.38 Ω R_DS(on) CoolMOS™ CE superjunction power MOSFET in PG-TO220 package with drain-connected pin 2, gate on pin 1, and source on pin 3. It delivers 14.1 A continuous drain current at T_C = 25°C, 24.8 nC total gate charge, and 2.54 µJ output switching energy at 400 V - optimized for high-efficiency PFC and hard/resonant PWM stages in PC Silverbox, LCD/PDP TV, and lighting power supplies.

For engineers reviewing the IPP50R380CEXKSA1 datasheet, IPP50R380CEXKSA1 pinout, IPP50R380CEXKSA1 application, or IPP50R380CEXKSA1 equivalent, this page provides verified thermal resistance (R_thJC = 1.27 °C/W), diode commutation ruggedness (d_i/d_t = 500 A/µs), avalanche rating (E_AS = 173 mJ), and JEDEC industrial qualification - all critical for reliable high-voltage SMPS design.

Technical Context

This device implements Infineon's superjunction architecture to achieve ultra-low figure-of-merit (R_DS(on) × Q_g = 9.42 Ω·nC) and low E_oss (2.54 µJ @ 400 V), enabling high-frequency operation without sacrificing voltage robustness. Its 500 V V_(BR)DSS and 550 V absolute maximum V_DS support 400 V DC-link designs with margin.

The integrated body diode features 207 ns reverse recovery time and 1.7 µC Q_rr, with rated commutation ruggedness up to 500 A/µs and 15 V/ns dv/dt capability. Gate threshold voltage (2.5–3.5 V) and plateau voltage (5.3 V) ensure stable turn-on under wide temperature and drive conditions.

Key Specifications

Pinout & Package

Package: PG-TO220 (standard through-hole TO-220 variant with isolated tab, lead-free plating, halogen-free mold compound).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPP50R380CPXKSA1, the CE variant trades 23% higher E_oss for 24% lower Q_g and superior ease-of-drive; versus STP5NK50ZFP, it delivers 58% lower R_DS(on) and full superjunction ruggedness - making it the only qualified choice for industrial-grade 100+ kHz PFC.

Availability

IPP50R380CEXKSA1 is available at Aetrix Electronics and suitable for active PFC boost converters, LLC resonant half-bridges, and hard-switched flyback power supplies requiring stable component supply, long-term industrial qualification, and consistent thermal performance across temperature extremes.

Supply support for IPP50R380CEXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CE superjunction MOSFET product line, engineered specifically for cost-sensitive, high-efficiency AC-DC power conversion in consumer and industrial SMPS - balancing performance, ruggedness, and manufacturability.

FAQ

Is IPP50R380CEXKSA1 pin-compatible with standard TO-220 MOSFETs?

Yes - it uses the industry-standard PG-TO220 footprint with drain on pin 2, gate on pin 1, and source on pin 3. Mechanical dimensions, screw hole placement, and thermal pad layout match JEDEC TO-220AB specifications, enabling drop-in replacement in existing PCBs designed for TO-220 discrete MOSFETs without layout changes.

What is the maximum recommended gate resistor value for hard-switched PFC operation?

For 65–100 kHz active PFC with 13 V gate drive, a 3.4 Ω gate resistor is specified in the datasheet test circuit to achieve 7.2 ns turn-on delay and 5.6 ns rise time. Values above 5.6 Ω increase switching loss significantly; below 2.2 Ω risks ringing and overshoot due to gate loop inductance in typical layouts.

Does IPP50R380CEXKSA1 require a negative gate turn-off voltage?

No - its gate threshold voltage (2.5–3.5 V) and plateau voltage (5.3 V) are fully compatible with standard 0 V / +12–15 V gate drivers. Negative turn-off is unnecessary; the device exhibits no parasitic turn-on under high dv/dt due to its 50 V/ns ruggedness rating and low Q_gd/Q_gs ratio (4.2:1).

How does the body diode performance compare to standard silicon diodes in flyback applications?

The integrated body diode has 0.85 V forward voltage at 3.9 A and 207 ns t_rr, outperforming most discrete FRDs in softness and recovery charge (Q_rr = 1.7 µC). In flyback demagnetization, this reduces voltage spikes and EMI versus standard 600 V FRDs - though external SiC Schottky clamping remains preferred for >200 kHz designs.