Infineon Technologies IPP60R190C6XKSA1

Overview

IPP60R190C6XKSA1 from Infineon Technologies is a 600 V, 20.2 A (T_C=25°C) superjunction N-channel power MOSFET in TO-220 package, optimized for high-efficiency hard-switching and resonant SMPS topologies. It features R_DS(on) = 0.19 Ω (max), Q_g = 63 nC (typ), E_oss = 5.2 µJ @ 400 V, and 500 A/µs body diode di/dt rating - enabling compact, cool-running PFC and main switch stages in server PSUs and telecom rectifiers.

For engineers reviewing the IPP60R190C6XKSA1 datasheet, IPP60R190C6XKSA1 pinout, IPP60R190C6XKSA1 application, or IPP60R190C6XKSA1 equivalent, key selection criteria include its 0.83 °C/W R_thJC, 600 V V_DS rating with 650 V surge capability, gate plateau voltage of 5.4 V, avalanche energy of 418 mJ, and JEDEC-qualified Pb-free/Halogen-free construction.

Technical Context

This CoolMOS™ C6 device implements a charge-compensated superjunction structure that reduces both conduction loss (via low R_DS(on)) and switching loss (via low Q_g and E_oss). Its 5.4 V gate plateau voltage enables robust drive margin with standard 12 V gate drivers, while the 500 A/µs body diode commutation ruggedness supports ZVS/ZCS operation in LLC and phase-shifted full-bridge converters.

The MOSFET is rated for continuous drain current up to 20.2 A at T_C = 25°C and 12.8 A at T_C = 100°C, with thermal resistance R_thJC = 0.83 °C/W - confirming suitability for heatsink-mounted, medium-power industrial and telecom power stages where thermal management and reliability are critical.

Key Specifications

Pinout & Package

IPP60R190C6XKSA1 is housed in a through-hole TO-220 package with isolated tab (full insulation per 2500 V_RMS test). The case serves as the drain terminal, enabling direct mounting to heatsinks without insulating hardware.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C6XKSA1, the C7 version delivers measurable efficiency gain above 150 kHz due to lower Q_g and E_oss, while the IPW60R190C6 offers identical performance in a mechanically more robust TO-247 housing - making both viable depending on frequency target and thermal/mechanical layout constraints.

Availability

IPP60R190C6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IPP60R190C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ C6 product line was engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in datacenter, telecom, and industrial power systems - emphasizing low-loss switching, rugged body diode behavior, and ease of system integration.

FAQ

What is the maximum continuous drain current for IPP60R190C6XKSA1 at 100°C case temperature?

The maximum continuous drain current is 12.8 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.3 datasheet. This rating is limited by junction temperature (T_j,max = 150°C) and assumes proper heatsinking with R_thJC = 0.83 °C/W. At T_C = 25°C, it rises to 20.2 A.

Does IPP60R190C6XKSA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dv/dt, suppress oscillation, and limit peak gate current. Infineon recommends R_G = 3.4 Ω for standard evaluation (per Table 20), balancing switching speed and gate driver stress. Values between 2.2 Ω and 10 Ω are commonly used depending on layout parasitics and EMI requirements.

Can IPP60R190C6XKSA1 be paralleled with identical units, and what precautions apply?

Yes, parallel operation is supported but requires gate ferrite beads or individual totem-pole drivers per device to prevent dynamic current imbalance. Layout symmetry, matched gate trace lengths, and Kelvin source connections are mandatory. Derating total current by ≥15% is advised to account for parameter spread and thermal coupling.

Is the TO-220 package of IPP60R190C6XKSA1 electrically insulated, and what is its isolation rating?

Yes - the TO-220 package features full electrical isolation between the drain-connected case and leads. It is rated for 2500 V_RMS insulation withstand voltage for 1 minute at 25°C, verified per IEC 60747-17, enabling direct heatsink mounting without insulating pads in most medium-power applications.