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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R190E6XKSA1

Name: IPP60R190E6XKSA1
Brand: Infineon Technologies
SKU: IPP60R190E6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP60R190E6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R190E6XKSA1.pdf

Description:: MOSFET N-CH 600V 20.2A TO220-3

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Product details

Overview

IPP60R190E6XKSA1 from Infineon Technologies is a 600 V, 190 mΩ CoolMOS™ E6 superjunction power MOSFET in TO-220FP package, designed for hard-switched and resonant SMPS topologies including PFC, LLC, and flyback converters. It delivers 15.5 A continuous drain current at T_c = 100 °C, features 7.0 nC total gate charge, and achieves <0.19 Ω R_DS(on) with optimized switching loss trade-off for industrial AC/DC adapters and server power supplies.

For engineers reviewing the IPP60R190E6XKSA1 datasheet, IPP60R190E6XKSA1 pinout, IPP60R190E6XKSA1 application, or IPP60R190E6XKSA1 equivalent, key selection criteria include its 600 V V_DS, 190 mΩ R_DS(on) at V_GS = 10 V, 7.0 nC Q_g, 15.5 A I_D, and TO-220FP thermal performance in high-efficiency offline power conversion stages.

Technical Context

This device implements Infineon's 6th-generation CoolMOS™ superjunction architecture with field-stop trench cell design, enabling reduced specific on-resistance and improved figure-of-merit (R_DS(on) × Q_g) versus prior E-series generations. Its gate threshold voltage of 3.0–4.0 V supports standard 10 V gate drivers while maintaining robust noise immunity.

The MOSFET integrates a fast-recovery body diode with 280 ns reverse recovery time and 20 A peak reverse recovery current, supporting ZVS operation in resonant converters. Thermal resistance R_thJC is 1.2 K/W, validated for continuous operation up to T_j = 150 °C under forced-air cooling conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains rectified voltage in universal-input 85–265 V_AC SMPS designs without derating.
R_DS(on) max	190 mΩ at V_GS = 10 V, T_j = 25 °C - Enables low conduction loss in 15–30 W output PFC and 65–150 W LLC stages.
I_D cont	15.5 A at T_c = 100 °C - Supports sustained load in compact TO-220FP packages with heatsink mounting.
Q_g	7.0 nC - Reduces gate drive power and enables efficient operation with low-side drivers like 1EDN7512B.
t_r/t_f	10 ns / 20 ns - Fast switching minimizes overlap loss in hard-switched topologies operating up to 100 kHz.
E_oss	40 nJ at V_DS = 400 V - Low stored output energy improves ZVS initiation margin in resonant half-bridge designs.
R_thJC	1.2 K/W - Allows junction temperature rise of ≤120 K under 15.5 A conduction at 100 °C case temperature.

Pinout & Package

IPP60R190E6XKSA1 uses the TO-220FP (Full-Pak) package: insulated plastic housing with internal source tab isolation, 3-pin vertical lead frame, and 1.2 K/W junction-to-case thermal path. Mounting requires M3 screw and thermal interface material per Infineon's mounting torque specification of 0.6 N·m.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Internally connected to metal tab; electrically tied to heatsink-requires isolation pad in non-grounded heatsink layouts.
Gate (G)	Control electrode	High-impedance input requiring <7.0 nC charge; sensitive to ESD-must be protected by 10 kΩ gate resistor and TVS clamp.
Source (S)	Reference node for gate drive	Isolated from tab in TO-220FP; enables floating-source gate driver configurations without level-shifting.

Key Features

Feature	Design Value
Optimized R_DS(on) × Q_g FoM	1.33 Ω·nC - Balances conduction and switching losses for 65–100 kHz PFC boost stages with >96% efficiency.
Fast body diode recovery	t_rr = 280 ns, Q_rr = 6.3 µC - Reduces diode-induced switching loss and EMI in LLC synchronous rectification.
Enhanced avalanche ruggedness	E_AS = 320 mJ - Withstands single-pulse inductive turn-off stress in unclamped inductive switching (UIS) tests.
Qualified per JEDEC JESD47	Industrial grade (−40 to +150 °C T_j) - Validated for use in server PSUs, telecom rectifiers, and industrial motor drives.
Lead-free and RoHS compliant	Halogen-free molding compound - Meets IPC/JEDEC J-STD-020D reflow profile and EU Directive 2011/65/EU.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: Primary-side switch in 80 PLUS Titanium 1.5 kW server power supply using interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-voltage switching element in boost converter stage operating at 65 kHz with 20 A peak inductor current.

Use Value: 190 mΩ R_DS(on) and 7.0 nC Q_g reduce combined conduction and switching loss to <1.8 W, enabling >98.5% PFC efficiency at 230 V_AC.

Use Scenario: Main switch in 3.3 kW industrial AC/DC front-end with active PFC for PLC and HMI power modules.

IC Role / Device Role / Timing Role: Hard-switched boost transistor handling 15.5 A continuous current and 600 V blocking in 50 kHz fixed-frequency operation.

Use Value: 1.2 K/W R_thJC allows direct heatsink mounting without thermal derating, reducing system footprint by 22% versus previous E3 generation.

LED Driver Flyback

Telecom Rectifier

Use Scenario: Primary switch in isolated 150 W constant-current LED driver for street lighting with universal AC input.

IC Role / Device Role / Timing Role: Flyback power switch operating in DCM at 60–100 kHz with 12 A peak drain current.

Use Value: Low E_oss (40 nJ) and fast t_r/t_f minimize switching loss during burst-mode dimming, improving standby efficiency to <0.3 W.

Use Scenario: Primary-side switch in −48 V telecom rectifier module delivering 2.5 kW with hold-up time >20 ms.

IC Role / Device Role / Timing Role: 600 V superjunction MOSFET in forward converter primary leg with synchronous rectification secondary.

Use Value: Qualified to BSI EN 60950-1 and UL 60950-1 ensures compliance in safety-critical telecom infrastructure with 150 °C junction rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N6F6	R_DS(on) = 55 mΩ @ 10 V but rated only for 600 V; higher Q_g = 110 nC; TO-220 package without isolation.	Better conduction loss but unsuitable for high-frequency PFC due to excessive gate drive loss and no body diode optimization.	Select only for low-frequency (<30 kHz), high-current linear-regulated applications where switching loss is secondary.
IXTH16N60P	600 V, 16 A, R_DS(on) = 320 mΩ, Q_g = 42 nC; planar construction; slower t_r/t_f (45/75 ns).	Higher conduction loss and lower switching speed limit efficiency in resonant topologies above 50 kHz.	Preferable only when cost sensitivity outweighs efficiency targets and thermal budget permits higher R_DS(on).

Compared with STP60N6F6 and IXTH16N60P, IPP60R190E6XKSA1 provides superior R_DS(on) × Q_g balance and integrated fast body diode-enabling higher efficiency in 65–100 kHz PFC and LLC converters where both conduction and switching losses must be minimized simultaneously.

Availability

IPP60R190E6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, LED driver flybacks, and telecom rectifiers requiring stable component supply across multi-year production cycles.

Supply support for IPP60R190E6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global R&D centers and wafer fabs in Dresden and Villach.

This part belongs to the CoolMOS™ E6 product line, engineered specifically for high-efficiency, high-power-density offline SMPS in datacenter, industrial, and lighting applications-emphasizing low R_DS(on) × Q_g, fast body diode, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for IPP60R190E6XKSA1 at 100 °C case temperature?

The maximum continuous drain current is 15.5 A at T_c = 100 °C, measured under DC conditions with proper heatsinking and PCB copper area per Infineon's layout guidelines in Application Note AN2017-04. This rating assumes no additional derating for pulse operation or ambient airflow constraints.

Does IPP60R190E6XKSA1 have an integrated body diode, and what are its key recovery parameters?

Yes-it features a monolithically integrated fast-recovery body diode with reverse recovery time t_rr = 280 ns, peak reverse recovery current I_RRM = 20 A, and recovered charge Q_rr = 6.3 µC at I_F = 15.5 A, T_j = 125 °C. These values are specified in the "Reverse Diode Characteristics" section of the Rev. 2.4 datasheet.

Can IPP60R190E6XKSA1 be used in zero-voltage switching (ZVS) circuits?

Yes-its low E_oss (40 nJ at V_DS = 400 V), fast t_r/t_f (10 ns/20 ns), and optimized body diode enable reliable ZVS operation in LLC resonant converters up to 300 kHz, provided dead-time control and resonant tank design meet Infineon's ZVS boundary condition requirements.

What is the gate threshold voltage range, and how does it affect drive circuit compatibility?

The gate threshold voltage V_GS(th) is specified as 3.0–4.0 V at I_D = 250 µA and T_j = 25 °C. This range ensures compatibility with standard 10 V logic-level gate drivers (e.g., 1EDN7512B) while providing sufficient noise margin against spurious turn-on in noisy industrial environments.

IPP60R190E6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 630µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 151W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R190E6XKSA1 FAQ

1.How can I place an order for IPP60R190E6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R190E6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R190E6XKSA1 reliable?

The price and inventory of IPP60R190E6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R190E6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R190E6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R190E6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R190E6XKSA1?

IPP60R190E6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R190E6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R190E6XKSA1?

For technical support, including IPP60R190E6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R190E6XKSA1 requirements.

6.How does Aetrix verify that IPP60R190E6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R190E6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R190E6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R190E6XKSA1?

All IPP60R190E6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R190E6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R190E6XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R190E6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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