Infineon Technologies IPP60R280CFD7XKSA1

Overview

IPP60R280CFD7XKSA1 from Infineon Technologies is a 600 V, 280 mΩ ultra-fast body diode CoolMOS™ CFD7 power MOSFET in PG-TO220 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 18 nC gate charge, 0.29–0.58 µC reverse recovery charge (Qrr), 1300 A/µs diF/dt ruggedness, and operates up to 150 °C junction temperature - enabling high-efficiency, high-power-density server, telecom, and EV charging power supplies.

For engineers reviewing the IPP60R280CFD7XKSA1 datasheet, IPP60R280CFD7XKSA1 pinout, IPP60R280CFD7XKSA1 application, or IPP60R280CFD7XKSA1 equivalent, key selection criteria include Qrr performance in hard-commutated resonant circuits, RDS(on)×Qg figure-of-merit (FOM), dv/dt robustness, thermal resistance (RthJC = 2.39 °C/W), and gate drive compatibility with standard 10 V logic-level controllers.

Technical Context

This device implements Infineon's superjunction-based CoolMOS™ CFD7 architecture, engineered specifically for zero-voltage switching (ZVS) operation. Its low Qg (18 nC typ.) and best-in-class Qrr (0.29–0.58 µC) minimize switching losses during turn-off and body diode commutation, while its 1300 A/µs diF/dt rating ensures reliable hard-switching capability without external snubbers.

The MOSFET features a fast intrinsic body diode with trr of 77–116 ns at 400 V, VR, and exhibits improved reverse recovery dv/dt and diF/dt ruggedness over prior CFD2 generation. Its RDS(on) remains stable across Tj = 25–150 °C (0.237–0.28 Ω), supporting consistent conduction loss in thermally demanding industrial environments.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (through-hole), with integral metal tab acting as Drain terminal. Standard mounting torque: 60 N·cm for M3/M3.5 screws.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Compared with IPP60R190CFD7 and IPW60R099C7, IPP60R280CFD7XKSA1 offers the optimal balance of switching efficiency, thermal stability, and ruggedness for variable-frequency LLC and phase-shifted full-bridge systems operating between 200–500 kHz with moderate power density targets.

Availability

IPP60R280CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and long-term lifecycle support.

Supply support for IPP60R280CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CFD7 product line, designed explicitly for high-efficiency soft-switching power conversion in data center, telecom, and electric vehicle infrastructure.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A gate resistor of 10.2 Ω is specified in the datasheet for switching characterization (td(on)/td(off)). For ZVS applications, values between 5–15 Ω maintain adequate dv/dt control while preserving turn-on speed. Exceeding 22 Ω risks incomplete turn-on before resonant voltage reversal, increasing body diode conduction time and loss.

Can IPP60R280CFD7XKSA1 be paralleled for higher current handling?

Yes, but with strict layout requirements: individual gate resistors (≥10 Ω), ferrite beads on each gate line, matched trace lengths, and symmetrical thermal mounting. Parallel operation increases total Qrr linearly, so ensure the controller can manage cumulative reverse recovery energy across all devices.

Does this MOSFET require negative gate turn-off voltage?

No - the device is rated for ±30 V dynamic gate voltage and operates reliably with 0 V to +10 V or +12 V gate drive. Negative turn-off (e.g., –5 V) is not required for robustness, though it may marginally improve noise immunity in high-dV/dt environments.

Is the TO-220 tab electrically isolated from the package plastic body?

No - the metal tab is internally connected to the Drain (Pin 2). Electrical isolation from heatsink or chassis must be achieved using insulating pads or shoulder washers rated for ≥650 V working voltage and thermal conductivity ≥1.0 W/m·K.