Infineon Technologies IPP60R380P6

Overview

IPP60R380P6 from Infineon Technologies is a 600 V, 380 mΩ CoolMOS™ P6 superjunction power MOSFET in PG-TO220-3 package, featuring 19 nC total gate charge, 29 A pulsed drain current, and integrated body diode with 500 A/µs commutation capability - deployed in PFC and hard-switching SMPS stages for server PSUs and telecom rectifiers.

For engineers reviewing the IPP60R380P6 datasheet, IPP60R380P6 pinout, IPP60R380P6 application, or IPP60R380P6 equivalent, key selection criteria include R_DS(on) vs. Q_g trade-off, dv/dt ruggedness (100 V/ns), E_oss (2.7 µJ @ 400 V), thermal resistance (R_thJC = 1.5 °C/W), and gate drive compatibility with standard 13 V logic-level controllers.

Technical Context

This 600 V superjunction MOSFET uses Infineon's CoolMOS™ P6 process to achieve low R_DS(on) × Q_g figure-of-merit (FOM) and reduced E_oss, enabling high-efficiency operation in continuous conduction mode (CCM) PFC and fixed-frequency PWM converters. Its 6.1 V gate plateau voltage ensures stable turn-on under varying drive conditions.

The device integrates a fast-recovery body diode (t_rr = 232 ns, Q_rr = 2.1 µC) with 15 V/ns reverse dv/dt rating and 500 A/µs di/dt capability, supporting robust synchronous rectification and ZVS resonant topologies without external diode supplementation.

Key Specifications

Pinout & Package

IPP60R380P6 is housed in PG-TO220-3 package with isolated tab (drain-connected). The case is electrically connected to Pin 2 (Drain), enabling direct heatsink mounting with minimal thermal resistance (R_thJC = 1.5 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Compared with IPP60R380C6 and STP60N3LLH6, IPP60R380P6 delivers optimal balance of conduction loss, switching loss, and ruggedness for mainstream 65–120 kHz industrial SMPS - especially where dv/dt immunity and thermal performance are prioritized over minimal Q_g.

Availability

IPP60R380P6 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial-grade reliability.

Supply support for IPP60R380P6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and qualification infrastructure aligned to IATF 16949 and ISO 9001.

This device belongs to the CoolMOS™ P6 superjunction MOSFET product line, engineered for high-efficiency, high-reliability switched-mode power supplies in industrial, computing, and telecom infrastructure.

FAQ

What is the maximum continuous drain current for IPP60R380P6 at 100 °C case temperature?

The maximum continuous drain current is 6.7 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.4 datasheet. This rating is thermally limited by junction-to-case thermal resistance (1.5 °C/W) and maximum junction temperature (150 °C), not by package current-carrying capacity alone.

Does IPP60R380P6 require a gate resistor for stability in hard-switching applications?

Yes - a 3.4 Ω gate resistor is used in the official switching time test circuit (Table 9) to suppress oscillation and control rise/fall times. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses. Layout-dependent parasitic inductance also dictates final value.

Can IPP60R380P6 replace IPP60R380E6 in an existing design?

No - while both share identical R_DS(on) and V_DS, the P6 version has higher Q_g (19 nC vs. 15.5 nC for E6) and different E_oss (2.7 µJ vs. 2.1 µJ). Gate drive requirements and switching loss profiles differ; re-validation of timing, thermal performance, and EMI is required before substitution.

Is the drain tab electrically isolated in the PG-TO220-3 package?

No - the metal tab is internally connected to Pin 2 (Drain) and is not electrically isolated. When mounted to a heatsink, the drain node becomes exposed to the mechanical mounting surface; insulation hardware (e.g., silicone pad + shoulder washer) is mandatory unless the heatsink is referenced to drain potential.