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Infineon Technologies IPP65R190CFD7AAKSA1

Part No.:
IPP65R190CFD7AAKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP65R190CFD7AAKSA1.pdf
Description:
MOSFET N-CH 650V 14A TO220-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:688

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Product details

Overview

IPP65R190CFD7AAKSA1 from Infineon is a 650 V, 190 mΩ automotive-qualified Superjunction MOSFET in PG-TO220-3 package with integrated fast body diode and ESD protection. It delivers ultra-low Qrr (0.46 µC), low RDS(on)×Qg FOM, and 1300 A/µs diF/dt for high-efficiency PFC and resonant DC-DC stages in on-board chargers.

For engineers reviewing the IPP65R190CFD7AAKSA1 datasheet, IPP65R190CFD7AAKSA1 pinout, IPP65R190CFD7AAKSA1 application, or IPP65R190CFD7AAKSA1 equivalent, key selection criteria include avalanche ruggedness (64 mJ), Eoss (3.7 µJ @ 400 V), dv/dt immunity (120 V/ns), and AEC-Q101 qualification for automotive battery systems up to 475 V.

Technical Context

This CoolMOS™ CFD7A device uses charge compensation technology to achieve low conduction and switching losses simultaneously. Its optimized internal structure enables ZVS operation in phase-shift full-bridge and LLC topologies while maintaining robust unclamped inductive switching capability.

The integrated fast-recovery body diode (trr = 97 ns, Qrr = 0.46 µC) eliminates need for external anti-parallel diodes in bidirectional converters. Gate plateau voltage of 5.7 V and low Qgd (9 nC) support clean turn-on/turn-off control under high dv/dt conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 650 V - Withstands DC bus voltages up to 475 V in automotive battery systems with margin for transients.
RDS(on),max 190 mΩ @ Tj = 150°C - Enables low conduction loss in high-current PFC boost stages at elevated temperature.
Qg,typ 28 nC @ VGS = 0–10 V - Supports efficient gate driving at 100–300 kHz switching frequencies with moderate driver strength.
Eoss 3.7 µJ @ 400 V - Reduces turn-off energy loss and enables higher frequency operation in resonant converters.
diF/dt 1300 A/µs - Allows fast commutation in synchronous rectification and bidirectional power flow without oscillation.
Qrr 0.46 µC @ VR = 400 V - Minimizes reverse recovery loss and EMI in hard-switched and quasi-resonant topologies.
Tj max 150°C - Rated for continuous operation in under-hood automotive environments with thermal derating.

Pinout & Package

Delivered in PG-TO220-3 package with isolated tab (Drain-connected). Mounting via M3/M3.5 screw (60 Ncm torque); soldering allowed only on leads at 260°C for 10 s at 1.6 mm from case.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control input Receives 10–13 V gate drive; low 10 Ω gate resistance enables stable switching with minimal ringing.
Pin 2 (Drain) Main current path (high-side) Connected to internal drain metallization and exposed tab; handles 55 A pulsed current and 650 V blocking.
Pin 3 (Source) Reference node / return path Serves as gate reference and current return; low-inductance layout critical for diF/dt performance.

Key Features

Feature Design Value
Integrated fast body diode trr = 97 ns, Qrr = 0.46 µC - Eliminates need for discrete anti-parallel diode in bidirectional DC-DC converters.
Avalanche-rated structure 100% single-pulse EAS tested to 64 mJ - Ensures reliability during inductive load switching without snubbers.
Low RDS(on) × Qg FOM 5.32 Ω·nC - Balances conduction and switching loss for optimal efficiency across light-to-full load.
AEC-Q101 qualified Validated for automotive-grade temperature cycling, HTRB, and UIS - Meets OEM requirements for on-board chargers.
High dv/dt immunity 120 V/ns (MOSFET), 70 V/ns (body diode) - Prevents false turn-on in high-noise high-side configurations.

Applications

On-Board Charger (OBC) PFC Stage LLC Resonant DC-DC Converter

Use Scenario: Boost PFC front-end in 400–475 V battery EV charging systems operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) boost converter.

Use Value: Low Qrr and high diF/dt enable zero-current switching transitions, reducing diode loss and EMI generation.

Use Scenario: Primary-side switch in 3.3–6.6 kW bi-directional LLC converter for vehicle-to-grid (V2G) applications.

IC Role / Device Role / Timing Role: ZVS-capable primary switch synchronized to resonant tank zero-voltage crossings.

Use Value: Ultra-low Eoss (3.7 µJ) minimizes turn-off loss at 200–500 kHz, improving full-load efficiency by ≥0.8%.

Phase-Shift Full-Bridge (PSFB) Bidirectional DC-DC for 48 V Mild Hybrid Systems

Use Scenario: High-side and low-side switches in PSFB topology for 800 V battery-to-48 V DC-DC conversion.

IC Role / Device Role / Timing Role: Hard-switched bridge leg with active clamp-assisted ZVS transition.

Use Value: 1300 A/µs diF/dt supports rapid freewheeling current reversal during dead-time, preventing shoot-through risk.

Use Scenario: Bidirectional power transfer between 48 V starter-generator and 400 V traction battery in mild hybrids.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-active-bridge (DAB) configuration.

Use Value: Integrated fast body diode enables efficient reverse conduction without external diode, saving PCB area and BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPP65R190C7XKSA1 Same RDS(on) and VDS, but CFD7 (not CFD7A) generation; higher Qrr (0.62 µC) and no AEC-Q101 qualification. Limited to industrial PFC; not approved for automotive OBC PPAP release. Select only for cost-sensitive non-automotive designs where diF/dt >1000 A/µs is not required.
IPW65R095C7FKSA1 Lower RDS(on) (95 mΩ), higher Qg (52 nC), same CFD7 platform; AEC-Q101 qualified. Better conduction loss at high current, but higher gate drive loss and reduced ZVS margin in LLC above 300 kHz. Prefer for <300 kHz PSFB or high-current unidirectional DC-DC where thermal headroom is constrained.

Compared with IPP65R190CFD7AAKSA1, the C7XKSA1 lacks automotive qualification and has inferior body diode performance, while the IPW65R095C7FKSA1 trades switching efficiency for conduction gain-making the CFD7A the optimal balance for 400–475 V bidirectional resonant converters requiring AEC-Q101 compliance.

Availability

IPP65R190CFD7AAKSA1 is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and automotive PFC stages requiring stable component supply, AEC-Q101 validation, and production-ready PPAP support.

Supply support for IPP65R190CFD7AAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the CoolMOS™ CFD7A product line-designed specifically for high-efficiency, high-reliability automotive power conversion in battery electric vehicles, with emphasis on ZVS compatibility and body-diode robustness.

FAQ

Is IPP65R190CFD7AAKSA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device due to thermal instability risks. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'." For applications requiring analog regulation, contact Infineon sales for alternative solutions or detailed assessment support.

What is the maximum recommended gate resistor value for reliable ZVS in LLC operation?

For ZVS operation at 300 kHz with 400 V bus, a gate resistor of ≤10.2 Ω is validated per datasheet test conditions. Higher values increase turn-on delay and reduce ZVS margin; values >15 Ω may cause incomplete turn-on before voltage zero-crossing, increasing switching loss and stress.

Does the PG-TO220-3 package provide electrical isolation between tab and pins?

No. The tab is internally connected to Pin 2 (Drain) and is not electrically isolated. Thermal interface material must be non-conductive if mounting to a heatsink referenced to a different potential. Mechanical isolation is required for high-side configurations with floating grounds.

How does the integrated ESD diode affect layout or system-level ESD testing?

The integrated ESD diode (marked *2) protects gate-source terminals to ±30 V (dynamic) and ±20 V (static), meeting HBM Class 2 (2 kV) requirements. Layout must avoid routing gate traces near noisy nodes, and system-level IEC 61000-4-2 testing still requires external TVS protection on power rails-not gate lines-as the internal diode does not cover system-level surge events.

IPP65R190CFD7AAKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
190mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:
28 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1291 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
77W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

IPP65R190CFD7AAKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IPP65R190CFD7AAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IPP65R190CFD7AAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R190CFD7AAKSA1 is usually 5 days.

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6.How does Aetrix verify that IPP65R190CFD7AAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R190CFD7AAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R190CFD7AAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R190CFD7AAKSA1?

All IPP65R190CFD7AAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R190CFD7AAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R190CFD7AAKSA1 part is unused and in its original packaging.

Return procedure for IPP65R190CFD7AAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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