Infineon Technologies IPP80R1K4P7XKSA1

Overview

IPP80R1K4P7XKSA1 from Infineon is an 800V superjunction N-channel CoolMOS™ P7 power MOSFET in PG-TO220 package, featuring R_DS(on) = 1.4 Ω (max), Q_g = 10 nC (typ), V_GS(th) = 3 V (typ), integrated Zener ESD protection, and JEDEC-qualified industrial reliability. It serves as a high-voltage switching device in primary-side hard/soft-switching flyback converters for LED lighting and low-power adapters.

For engineers reviewing the IPP80R1K4P7XKSA1 datasheet, IPP80R1K4P7XKSA1 pinout, IPP80R1K4P7XKSA1 application, or IPP80R1K4P7XKSA1 equivalent, key selection criteria include its 800V V_DS, 1.4 Ω R_DS(on), 3 V gate threshold with ±0.5 V variation, 0.9 µJ E_oss at 500 V, and PG-TO220-3 thermal performance (R_thJC = 3.9 °C/W).

Technical Context

This MOSFET employs Infineon's 4th-generation CoolMOS™ P7 superjunction technology optimized for high-voltage, medium-power SMPS. Its low Q_g/C_iss/C_oss and reduced E_oss enable efficient operation in discontinuous conduction mode (DCM) and quasi-resonant (QR) flyback topologies up to 400 V DC-link.

The device integrates a robust Zener-protected gate structure (ESD Class 2 HBM), exhibits 100 V/ns dv/dt ruggedness, and supports parallel operation via gate ferrite beads-critical for auxiliary power supplies where layout simplicity and production yield are prioritized over ultra-high-frequency switching.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab). Tab is electrically connected to Drain (Pin 2). Mounting torque: 60 N·cm (M3/M3.5 screws).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with IPP65R1K4C7XKSA1 and IPW65R1K4P7XKSA1, IPP80R1K4P7XKSA1 uniquely delivers 800 V capability in TO-220 while maintaining P7-series low E_oss and tight V_GS(th) tolerance-enabling universal-input designs without sacrificing efficiency or production yield.

Availability

IPP80R1K4P7XKSA1 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C adapters ≤30 W, and industrial auxiliary power supplies requiring stable component supply across multi-year production cycles.

Supply support for IPP80R1K4P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

The CoolMOS™ P7 series targets high-efficiency, cost-sensitive offline SMPS in consumer, lighting, and industrial markets-designed to replace older superjunction generations with improved ease-of-use and production robustness.

FAQ

What is the maximum continuous drain current for IPP80R1K4P7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 2.7 A at T_C = 100°C, as specified in Table 2 of the datasheet. This value is thermally limited by the 3.9 °C/W junction-to-case thermal resistance and 150°C maximum junction temperature. Derating curves in Diagram 1 confirm 25 W power dissipation at 100°C case, consistent with I_D² × R_DS(on) calculations using 1.4 Ω.

Does IPP80R1K4P7XKSA1 require external gate protection components?

No external gate Zener diode is required-the device integrates a robust gate oxide Zener clamp rated for ≥2 kV HBM ESD. However, a small gate resistor (10–22 Ω) and optional ferrite bead remain recommended to dampen high-frequency ringing during paralleling or fast-switching layouts, per Infineon's application note AN2017-04.

Can IPP80R1K4P7XKSA1 be used in PFC boost stages?

Yes-it is explicitly recommended for PFC stages in consumer applications and solar auxiliary supplies. Its 800 V rating accommodates 400 V DC-link with margin, and low E_oss (0.9 µJ) reduces switching losses in continuous conduction mode (CCM) PFC. However, for >1 kW industrial PFC, higher-current devices like IPW65R041CFD7 are preferred due to lower R_DS(on).

What is the safe operating area (SOA) limitation at 100 V V_DS and 25°C case temperature?

At V_DS = 100 V and T_C = 25°C, the SOA limits continuous drain current to 8.9 A (per Table 2 pulsed rating, DC-limited by thermal constraints). Diagram 2 confirms this point lies within the DC boundary at 100 V, supported by the 32 W P_tot rating and R_thJC = 3.9 °C/W, yielding ~120°C junction rise at 8.9 A × 1.4 Ω = 111 W conduction loss-exceeding thermal limits, so practical DC current is lower.