Infineon Technologies IPS70R600P7SAKMA1

Overview

IPS70R600P7SAKMA1 from Infineon Technologies is a 700 V, 0.6 Ω R_DS(on) max, superjunction N-channel CoolMOS™ P7 power MOSFET in PG-TO251-3 (IPAK SL) package with drain-connected tab, gate on pin 1, source on pin 3. It delivers 10.5 nC typical gate charge, 1.2 µJ E_oss at 400 V, and 20.5 A pulsed drain current - optimized for high-efficiency, high-power-density flyback converters in consumer chargers and LED lighting.

For engineers reviewing the IPS70R600P7SAKMA1 datasheet, IPS70R600P7SAKMA1 pinout, IPS70R600P7SAKMA1 application, or IPS70R600P7SAKMA1 equivalent, key selection criteria include its 700 V V_DS, low R_DS(on)×Q_g figure-of-merit, integrated ESD protection (HBM Class 2), and thermal resistance of 2.9 °C/W (junction-to-case).

Technical Context

This CoolMOS™ P7 device implements a superjunction architecture enabling fast switching with reduced conduction and switching losses. Its 3.0 V typical gate threshold voltage and 4.4 V gate plateau voltage support robust drive margin in 12 V gate-drive systems while maintaining low E_oss (1.2 µJ) and low C_oss (7 pF) at 400 V.

The MOSFET integrates a fast-recovery body diode with 190 ns reverse recovery time and 0.8 µC Q_rr, enabling reliable operation in discontinuous conduction mode (DCM) flyback topologies. Its dv/dt ruggedness of 100 V/ns ensures stability under high-slew-rate conditions without spurious turn-on.

Key Specifications

Pinout & Package

Package: PG-TO251-3 (IPAK SL) - surface-mountable power package with exposed drain tab for thermal conduction and mechanical anchoring. Tab is electrically connected to drain (pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R600P7 and IPD70R600P7, IPS70R600P7SAKMA1 offers the lowest junction-to-case thermal resistance (2.9 °C/W) and smallest SMT-compatible footprint among P7 700 V/0.6 Ω variants - making it optimal for space-constrained, high-efficiency flyback designs where thermal performance and manufacturability are co-prioritized.

Availability

IPS70R600P7SAKMA1 is available at Aetrix Electronics and suitable for USB-C PD chargers, smart LED lighting drivers, TV auxiliary power supplies, and compact IoT adapters requiring stable component supply across production ramp and long-term maintenance cycles.

Supply support for IPS70R600P7SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for cost-sensitive, high-efficiency offline SMPS in consumer electronics - balancing performance, thermal behavior, and ease of use in flyback and resonant topologies.

FAQ

What gate drive voltage is required for full enhancement?

The IPS70R600P7SAKMA1 has a typical gate threshold voltage (V_GS(th)) of 3 V and achieves specified R_DS(on) at V_GS = 10 V. For reliable saturation and minimal conduction loss, a 12 V ±10% gate drive is recommended. The gate plateau voltage is 4.4 V, confirming strong Miller immunity above this level.

Can this MOSFET be paralleled in high-power designs?

Yes, but with specific layout precautions: Infineon recommends using individual ferrite beads on each gate line or separate totem-pole drivers to suppress oscillation and ensure current sharing. Matching gate resistors (±5%) and symmetrical PCB routing are mandatory; the device's low R_DS(on) temperature coefficient supports stable parallel operation up to 3 units.

Does it include an integrated body diode, and how is it characterized?

Yes - it features a monolithic fast-recovery body diode with typical V_SD = 0.9 V at 2.5 A and 25 °C, t_rr = 190 ns, Q_rr = 0.8 µC, and di/dt capability of 50 A/µs. These parameters are measured at V_R = 400 V and support ZVS operation in quasi-resonant flyback without external diode replacement.

Is the drain tab electrically isolated from the package leads?

No - the drain tab is internally bonded to pin 2 (drain terminal) and is not insulated. It must be mounted on a PCB copper pour or heatsink electrically connected to the drain net. Insulating pads or thermal interface materials with dielectric breakdown >700 V are required if isolation from chassis ground is needed.