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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU80R4K5P7AKMA1

Name: IPU80R4K5P7AKMA1
Brand: Infineon Technologies
SKU: IPU80R4K5P7AKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU80R4K5P7AKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU80R4K5P7AKMA1.pdf

Description:: MOSFET N-CH 800V 1.5A TO251-3

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Product details

Overview

IPU80R4K5P7AKMA1 from Infineon is an 800V superjunction N-channel CoolMOS™ P7 power MOSFET in PG-TO251-3 (IPAK) package, featuring R_DS(on) = 4.5 Ω (max), Q_g = 4.0 nC (typ), V_GS(th) = 3 V (typ), integrated Zener ESD protection, and JEDEC industrial qualification. It serves as a high-voltage switching device in flyback converters for LED lighting, low-power adapters, and auxiliary power supplies.

For engineers reviewing the IPU80R4K5P7AKMA1 datasheet, IPU80R4K5P7AKMA1 pinout, IPU80R4K5P7AKMA1 application, or IPU80R4K5P7AKMA1 equivalent, key selection criteria include 800V V_DS rating, low gate charge for soft-switching efficiency, tight 3.0 V ±0.5 V threshold voltage tolerance, thermal resistance of 9.4 °C/W (j–case), and suitability for paralleling with gate ferrite bead mitigation.

Technical Context

This 800V CoolMOS™ P7 device employs superjunction cell architecture optimized for hard- and soft-switching flyback topologies. Its low C_iss (80 pF), C_oss (3 pF), and E_oss (0.4 µJ @ 500 V) reduce switching losses and improve light-load efficiency.

The MOSFET integrates a robust body diode with t_rr = 600 ns and Q_rr = 1.6 µC at 400 V, enabling reliable discontinuous conduction mode (DCM) operation. Its 3 V gate threshold and ±0.5 V variation simplify gate drive design and enhance production yield across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports primary-side switching in universal-input offline SMPS up to 400 V DC link with margin.
R_DS(on), max	4.5 Ω @ T_j = 150°C - Determines conduction loss and heatsink sizing in 1.5 A continuous drain applications.
Q_g, typ	4.0 nC - Enables fast, low-loss turn-on with standard 13 V gate drivers; reduces gate driver power dissipation.
E_oss @ 500 V	0.4 µJ - Low stored output capacitance energy minimizes turn-off loss in high-frequency flyback designs.
V_GS(th), typ	3.0 V with ±0.5 V variation - Ensures consistent turn-on behavior across batches and temperatures; simplifies bias network design.
ESD Class	HBM Class 1C - Integrated Zener protection reduces assembly-line ESD failures without external components.
R_thJC	9.4 °C/W - Defines junction-to-case thermal path; enables accurate thermal modeling when mounted on PCB copper pour or heatsink.

Pinout & Package

IPU80R4K5P7AKMA1 uses the PG-TO251-3 (IPAK) package with exposed drain tab for enhanced thermal performance. The molded plastic case features gull-wing leads and a thermally conductive metal tab soldered directly to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives gate drive signal; low 5.0 Ω internal gate resistance supports stable switching without external series resistor in many cases.
Pin 2 (Drain) + Tab	High-voltage power terminal	Tab is electrically connected to Pin 2 and serves as primary heat path; must be soldered to large copper area for thermal management.
Pin 3 (Source)	Reference node / return path	Provides source connection for gate drive loop and current sensing; forms low-inductance return path with adjacent ground plane.

Key Features

Feature	Design Value
Best-in-class FOM R_DS(on) × E_oss	Enables higher switching frequencies in flyback converters without sacrificing efficiency or thermal headroom.
V_GS(th) = 3.0 V ± 0.5 V	Reduces risk of partial turn-on during startup or noise transients; improves system reliability in noisy industrial environments.
Integrated Zener ESD protection	Eliminates need for external gate protection diodes, reducing BOM count and layout complexity in space-constrained adapters.
Fully qualified per JEDEC JESD47	Validated for 150°C operation and long-term reliability in industrial power supplies, supporting extended product lifecycles.
Optimized for paralleling	Low threshold variation and matched dynamic parameters allow stable current sharing with gate ferrite bead compensation.

Applications

LED Lighting Driver

USB-C Adapter Primary Switch

Use Scenario: 30 W isolated flyback converter powering smart LED bulbs with universal AC input (90–264 V_AC).

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating in DCM at 65–100 kHz; handles peak drain voltage up to 720 V.

Use Value: Low E_oss and tight V_GS(th) ensure stable regulation and <1% line/load regulation drift over temperature.

Use Scenario: 20–30 W compact USB-C PD adapter using quasi-resonant flyback with valley switching.

IC Role / Device Role / Timing Role: Main power switch synchronized to zero-voltage switching transitions; rated for 800 V breakdown margin.

Use Value: 4.5 Ω R_DS(on) and 4.0 nC Q_g enable >90% efficiency at full load while maintaining <50 °C case temperature.

Auxiliary Power Supply

Solar Microinverter Auxiliary Stage

Use Scenario: 5 W standby supply in industrial PLCs, deriving 12 V/5 V from main DC bus or rectified AC.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck-derived topology; operates continuously at light load.

Use Value: Low IDSS (<1 µA @ 800 V, 150°C) ensures minimal standby power loss and meets Energy Star Level VI requirements.

Use Scenario: Isolated auxiliary supply in solar microinverters, powering gate drivers and sensing circuitry from PV string voltage.

IC Role / Device Role / Timing Role: Primary switch in flyback converter fed from 300–600 V DC input; withstands rapid voltage transients during grid faults.

Use Value: 100 V/ns dv/dt ruggedness and 1 mJ single-pulse avalanche energy support robust operation under PV string surge conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPU80R65P7AKMA1	R_DS(on) = 6.5 Ω (max); otherwise identical P7 platform, same package and pinout.	Higher conduction loss; suited for lower-current, cost-sensitive designs where 1.5 A ID is not required.	Select when thermal budget allows higher R_DS(on) and BOM cost reduction is prioritized over peak efficiency.
IPU80R1K0P7AKMA1	R_DS(on) = 1.0 Ω (max); 30% higher Q_g (5.2 nC); same V_GS(th) and E_oss.	Better conduction performance but increased gate drive demand; requires stronger driver for same switching speed.	Choose for higher-power flyback stages (>25 W) where reduced conduction loss outweighs added gate drive complexity.

Compared with IPU80R65P7AKMA1, the IPU80R4K5P7AKMA1 delivers lower conduction loss at 1.5 A, while versus IPU80R1K0P7AKMA1 it offers lower gate drive burden and better light-load efficiency-making it optimal for mid-power adapters and lighting where balance between R_DS(on) and Q_g is critical.

Availability

IPU80R4K5P7AKMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C power adapters, and industrial auxiliary power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPU80R4K5P7AKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon and wide-bandgap technologies.

The CoolMOS™ P7 series targets high-efficiency, high-density offline SMPS designs-specifically engineered to reduce total system cost and size in flyback, PFC, and resonant converters through superior R_DS(on) × E_oss figure-of-merit and ease-of-use features.

FAQ

What is the maximum continuous drain current for IPU80R4K5P7AKMA1 at 100°C case temperature?

The maximum continuous drain current is 1.0 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating is limited by junction temperature (T_j ≤ 150°C) and assumes proper PCB copper area for thermal conduction from the drain tab. Derating is linear between 25°C and 100°C.

Can IPU80R4K5P7AKMA1 be used in parallel configurations?

Yes-its tight V_GS(th) tolerance (±0.5 V) and matched dynamic parameters make it suitable for paralleling. Infineon recommends using individual gate ferrite beads or separate totem-pole drivers to suppress oscillation and ensure balanced current sharing, especially above 2 A total current.

Does this MOSFET include an integrated body diode, and what are its reverse recovery characteristics?

Yes, it features a monolithic body diode with t_rr = 600 ns and Q_rr = 1.6 µC at V_R = 400 V, I_F = 0.2 A, and di_F/dt = 50 A/µs. These values support reliable DCM flyback operation but are not optimized for synchronous rectification; external Schottky diodes are recommended for high-frequency secondary-side rectification.

Is the drain tab electrically isolated from the package leads?

No-the drain tab is internally connected to Pin 2 (Drain) and is not insulated. It must be soldered to a PCB copper pour designated as the high-voltage drain net. Any thermal pad or heatsink attached to the tab must maintain appropriate creepage and clearance distances for 800 V isolation requirements.

IPU80R4K5P7AKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 1.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5Ohm @ 400mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 250 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 13W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-21

IPU80R4K5P7AKMA1 FAQ

1.How can I place an order for IPU80R4K5P7AKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU80R4K5P7AKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU80R4K5P7AKMA1 reliable?

The price and inventory of IPU80R4K5P7AKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU80R4K5P7AKMA1 is usually 5 days.

3.What payment methods are accepted for IPU80R4K5P7AKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU80R4K5P7AKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU80R4K5P7AKMA1?

IPU80R4K5P7AKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU80R4K5P7AKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU80R4K5P7AKMA1?

For technical support, including IPU80R4K5P7AKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU80R4K5P7AKMA1 requirements.

6.How does Aetrix verify that IPU80R4K5P7AKMA1 is sourced from the original manufacturer or authorized distributors?

All IPU80R4K5P7AKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU80R4K5P7AKMA1 meets industry standards.

7.What is the process for return or replacement of IPU80R4K5P7AKMA1?

All IPU80R4K5P7AKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPU80R4K5P7AKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU80R4K5P7AKMA1 part is unused and in its original packaging.

Return procedure for IPU80R4K5P7AKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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