Infineon Technologies IQE006NE2LM5CGATMA1

Overview

IQE006NE2LM5CGATMA1 from Infineon Technologies is an N-channel logic-level MOSFET optimized for high-current synchronous buck converters and OR-ing applications, featuring 25 V V_DS, 0.65 mΩ R_DS(on) at V_GS = 10 V, 298 A continuous drain current (T_C = 25 °C), and PG-TTFN-9-1 thermally enhanced package with exposed drain pad. It supports industrial-grade operation up to 150 °C junction temperature.

For engineers reviewing the IQE006NE2LM5CGATMA1 datasheet, IQE006NE2LM5CGATMA1 pinout, IQE006NE2LM5CGATMA1 application, or IQE006NE2LM5CGATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, 100% avalanche-tested ruggedness, Q_oss = 41.3 nC for hard-switching efficiency, and thermal resistance R_thJC = 1.4 °C/W for high-power density designs.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance: Q_g = 37.9 nC (0–4.5 V) and t_d(off) = 27 ns enable high-frequency operation in DC/DC converters. Its integrated body diode exhibits Q_rr = 25 nC and V_SD = 0.75 V at 20 A, supporting efficient synchronous rectification.

The MOSFET is fully qualified per JEDEC JESD47 for industrial applications and features Pb-free, halogen-free construction compliant with IEC61249-2-21. Thermal design leverages the PG-TTFN-9-1 package's low R_thJC and large copper drain area for direct PCB heat spreading without external heatsinks.

Key Specifications

Pinout & Package

Package: PG-TTFN-9-1 - Thermally enhanced thin-profile flat no-lead package with 9 terminals, featuring a large exposed drain pad (Pins 5–8) for low-inductance, high-current routing and superior thermal transfer to PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6342TRPBF and SIZ204DT-T1-GE3, IQE006NE2LM5CGATMA1 delivers optimal balance of ultra-low R_DS(on), industry-leading thermal performance, and proven avalanche ruggedness-making it the preferred choice for >200 A industrial and server power stages where reliability and power density are paramount.

Availability

IQE006NE2LM5CGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, OR-ing power systems, and high-current hot-swap controllers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IQE006NE2LM5CGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions, with leadership in silicon and wide-bandgap technologies.

This device belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-current DC/DC conversion in data center, industrial, and telecom infrastructure where low R_DS(on), thermal performance, and ruggedness are non-negotiable.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 188 A, as specified in Table 2 of the datasheet under "Continuous drain current" with V_GS = 10 V. This derating reflects thermal limits of the PG-TTFN-9-1 package and must be applied in thermal simulations using R_thJC = 1.4 °C/W.

Is IQE006NE2LM5CGATMA1 suitable for 4.5 V gate drive in synchronous rectifier applications?

Yes-R_DS(on) is guaranteed ≤ 0.80 mΩ at V_GS = 4.5 V and I_D = 20 A, and its gate threshold voltage (V_GS(th) = 1.2–2.0 V) ensures full enhancement with standard 4.5 V logic drivers. The low Q_g (37.9 nC, 0–4.5 V) further supports clean switching in high-frequency synchronous rectifiers.

Does this MOSFET include an integrated Schottky diode?

No-it features a standard silicon body diode with V_SD = 0.75 V at 20 A and T_j = 25 °C, and Q_rr = 25 nC. It does not contain a co-packaged Schottky diode; however, its low reverse recovery charge and soft recovery characteristics make it suitable for synchronous rectification without external diode replacement.

What is the recommended PCB layout for thermal performance?

Use ≥6 cm² of 70 µm thick copper on the primary layer connected to Pins 5–8 (drain) and Pins 1–4 (source), with vertical board orientation in still air. Thermal vias under the exposed drain pad should connect to internal ground/power planes. Avoid solder mask over thermal copper areas to maximize heat transfer per the datasheet's R_thJA = 60 °C/W test condition.