Infineon Technologies IQE008N03LM5CGSCATMA1

Overview

IQE008N03LM5CGSCATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-WHTFN-9 package, rated for 30 V V_DS, 0.85 mΩ R_DS(on) at V_GS = 4.5 V, and 252 A continuous drain current at T_C = 25 °C. It integrates an internal body diode and is optimized for high-efficiency synchronous rectification in SMPS topologies.

For engineers reviewing the IQE008N03LM5CGSCATMA1 datasheet, IQE008N03LM5CGSCATMA1 pinout, IQE008N03LM5CGSCATMA1 application, or IQE008N03LM5CGSCATMA1 equivalent, key selection criteria include its ultra-low R_DS(on), 31 nC Q_oss, 100% avalanche-tested ruggedness, and thermal resistance of 1.4 °C/W (junction-to-case, bottom).

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve sub-1 mΩ on-resistance at 4.5 V gate drive while maintaining fast switching with 30 nC total gate charge (0–4.5 V) and 9.3 ns fall time. Its dual-side cooling capability is enabled by separate top and bottom thermal paths (R_thJC,top = 0.7 °C/W, R_thJC,bottom = 1.4 °C/W).

The MOSFET features a gate threshold voltage of 1.2–2.0 V, enabling robust logic-level operation, and includes integrated reverse recovery characteristics (t_rr = 34–68 ns, Q_rr = 27–54 nC) suitable for high-frequency synchronous rectification where diode conduction and commutation losses must be minimized.

Key Specifications

Pinout & Package

Package: PG-WHTFN-9 - Thermally enhanced wettable flank QFN with exposed drain pad (pins 5–8), gate pad (pin 9), and source terminals (pins 1–4). Designed for automated optical solder inspection and dual-side thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRFH7107TRPBF and SCT3022KLGC11, IQE008N03LM5CGSCATMA1 uniquely balances ultra-low R_DS(on), logic-level gate drive, and thermally optimized packaging for 30 V synchronous rectification-making it irreplaceable in high-current, space-constrained VRM and telecom rectifier designs.

Availability

IQE008N03LM5CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, high-reliability qualification, and long-term production continuity.

Supply support for IQE008N03LM5CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM 5 family-engineered specifically for high-efficiency, high-current power conversion in datacenter, telecom, and industrial SMPS, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum junction temperature for continuous operation?

The IQE008N03LM5CGSCATMA1 supports continuous operation up to T_j = 150 °C, as specified in its absolute maximum ratings. Derating is required above T_C = 100 °C per Figure 2 in the datasheet, where I_D drops to 147 A at T_C = 100 °C with V_GS = 4.5 V. Thermal design must ensure case temperature remains within limits using the provided R_thJC values.

Can this MOSFET be used in parallel configurations?

Yes-the device exhibits positive temperature coefficient for R_DS(on) (see Figure 9), ensuring inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance) and individual gate resistors (≥1 Ω) are mandatory to suppress oscillation and ensure balanced dynamic current distribution across multiple units.

Is the internal body diode suitable for freewheeling in non-synchronous designs?

The integrated body diode has V_SD = 0.73–1.0 V at 20 A and t_rr = 34–68 ns, making it usable for low-frequency freewheeling. However, its Q_rr (27–54 nC) and softness factor are not optimized for hard-switched flyback or boost; dedicated Schottky or SiC diodes are preferred where reverse recovery loss dominates.

Does the PG-WHTFN-9 package support reflow soldering per IPC-J-STD-020?

Yes-the package is qualified for standard lead-free reflow profiles (peak 260 °C, 20–40 s above 217 °C) per IPC-J-STD-020D. The wettable flank geometry enables automated optical inspection of solder fillets, and the exposed drain pad requires controlled stencil aperture and paste volume to prevent voiding and ensure thermal bond integrity.