Infineon Technologies IQE008N03LM5SCATMA1

Overview

IQE008N03LM5SCATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET optimized for high-efficiency synchronous rectification in SMPS, with 30 V V_DS, 0.85 mΩ R_DS(on) @ 4.5 V, 252 A continuous drain current at T_C = 25 °C, and PG-WHSON-8 package with exposed drain pad. It integrates a robust internal body diode and is fully qualified for industrial applications per JEDEC.

For engineers reviewing the IQE008N03LM5SCATMA1 datasheet, IQE008N03LM5SCATMA1 pinout, IQE008N03LM5SCATMA1 application, or IQE008N03LM5SCATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, ultra-low Q_oss (31 nC), thermal resistance (R_thJC = 1.4 °C/W bottom), avalanche ruggedness (50 mJ), and suitability for high-current DC/DC output stages.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve sub-1 mΩ on-resistance at logic-level gate drive, enabling efficient operation in 12 V and 24 V input SMPS topologies. Its gate charge profile (Q_g = 30 nC @ 0–4.5 V) and fast switching (t_r = 38 ns, t_f = 9.3 ns) support high-frequency synchronous rectification up to 1 MHz.

The integrated body diode exhibits low V_SD (0.73 V typ. @ 20 A) and controlled reverse recovery (Q_rr = 27 nC, t_rr = 34 ns), minimizing shoot-through risk and conduction losses in hard-switched and resonant converters. Thermal design leverages dual-path heat dissipation via bottom-side drain pad (R_thJC = 1.4 °C/W) and top-side case (R_thJC = 0.7 °C/W).

Key Specifications

Pinout & Package

PG-WHSON-8 package with exposed drain pad on bottom side; 2.1 mm × 2.1 mm footprint, 0.5 mm pitch, 0.55 mm height. Drain connected to pins 5–8 and bottom thermal pad; source to pins 1–3; gate to pin 4.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRFH7085TRPBF and STL220N3LLH6, IQE008N03LM5SCATMA1 delivers the best balance of ultra-low R_DS(on), low Q_oss, and dual-path thermal management-enabling higher power density in space-constrained, high-reliability industrial and telecom systems without compromising switching efficiency.

Availability

IQE008N03LM5SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, industrial PLC power supplies, and EV onboard charger auxiliary rails requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IQE008N03LM5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions, with leadership in silicon and wide-bandgap power devices.

This device belongs to the OptiMOSTM 5 family-engineered specifically for high-current, high-frequency synchronous rectification and primary-side switching in industrial-grade SMPS, emphasizing low R_DS(on), ruggedness, and thermal performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IQE008N03LM5SCATMA1 supports 147 A continuous drain current at T_C = 100 °C with V_GS = 4.5 V, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the PG-WHSON-8 package under realistic board-level cooling conditions and must be validated using the ID = f(T_C) curve in Diagram 2.

Is the internal body diode suitable for freewheeling in hard-switched topologies?

Yes-the integrated body diode is characterized with V_SD = 0.73 V (typ.) at 20 A and T_j = 25 °C, and reverse recovery parameters Q_rr = 27 nC and t_rr = 34 ns (typ.). These values confirm suitability for freewheeling in hard-switched buck and forward converters where di/dt ≤ 100 A/µs.

What is the recommended minimum PCB copper area for thermal management?

Infineon specifies a 6 cm² copper area (single layer, 70 µm thick) connected to the drain pad for R_thJA = 60 °C/W. For optimal thermal performance, use ≥6 cm² on inner or outer layers, ensure full solder coverage of the bottom thermal pad, and avoid thermal vias under the pad unless designed per IPC-7095 guidelines.

Does this MOSFET require gate resistors for stability in high-speed switching?

Yes-a gate resistor (R_G,ext = 1.6 Ω) is used in the datasheet's switching time test conditions (Table 5). This value damps gate oscillation and controls dV/dt during turn-on/off. For 1 MHz operation, a 1–2 Ω non-inductive resistor placed adjacent to the gate pin is recommended to prevent ringing and EMI.