Infineon Technologies IQE065N10NM5ATMA1

Overview

IQE065N10NM5ATMA1 from Infineon is an N-channel 100 V OptiMOS™ 5 power MOSFET in PG-TSON-8 package, rated for 85 A continuous drain current at T_C = 25 °C, with R_DS(on) max of 6.5 mΩ at V_GS = 10 V and Q_g total of 34–42 nC. It features 100% avalanche testing, superior thermal resistance (R_thJC typ. 0.8 °C/W), and is qualified for industrial applications per JEDEC JESD47/JESD22/J-STD-020. It serves as a high-efficiency synchronous rectifier or primary-side switch in SMPS.

For engineers reviewing the IQE065N10NM5ATMA1 datasheet, IQE065N10NM5ATMA1 pinout, IQE065N10NM5ATMA1 application, or IQE065N10NM5ATMA1 equivalent, key selection criteria include its low R_DS(on), optimized gate charge profile for hard-switched and synchronous rectification topologies, robust avalanche capability, and thermal performance on standard FR4 PCBs with 6 cm² copper area.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for high-frequency switching in DC-DC converters and industrial power supplies. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) enables reliable turn-on with standard 5 V or 10 V gate drivers, while the low output capacitance (C_oss typ. 440 pF at V_DS = 50 V) reduces switching losses during hard commutation.

The integrated body diode supports synchronous rectification with t_rr of 36–72 ns and Q_rr of 40–80 nC, and its thermal design targets junction-to-case conduction via the exposed drain pad (pins 5–8). The PG-TSON-8 package enables compact layout with low-inductance source and gate connections.

Key Specifications

Pinout & Package

Package: PG-TSON-8 (exposed drain pad), RoHS-compliant, halogen-free per IEC61249-2-21, Pb-free lead plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with IPB180N10N5 and STL220N10F7, IQE065N10NM5ATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, and proven industrial reliability-making it preferred for high-frequency, thermally constrained SMPS where both conduction and switching losses matter.

Availability

IQE065N10NM5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, motor drive inverters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IQE065N10NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 5 product line-designed specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, industrial, and e-mobility applications where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IQE065N10NM5ATMA1 has a maximum junction temperature (T_j) of 175 °C, validated per JEDEC JESD22-A108. Continuous operation at this limit requires thermal design ensuring R_thJA ≤ 1.5 °C/W under worst-case ambient and airflow conditions, typically achieved using ≥6 cm² PCB copper and natural convection.

Is the body diode suitable for synchronous rectification without external control?

No-the internal body diode is not intended for standalone synchronous rectification. It is optimized for freewheeling and recovery in hard-switched topologies. For true synchronous rectification, external gate timing control (e.g., from a dedicated SR controller) is required to align turn-on with zero-voltage crossing and avoid cross-conduction.

Does this MOSFET require gate resistors for stable switching?

Yes-Infineon recommends a gate resistor of 3–10 Ω in series with the driver output to damp parasitic oscillation and control dV/dt. This is especially critical at >200 kHz switching due to the device's low gate resistance (R_G typ. 0.7 Ω) and high transconductance (g_fs typ. 55 S), which can excite PCB trace inductance.

Can IQE065N10NM5ATMA1 replace older OptiMOS™ 4 devices in existing designs?

Yes-pin-compatible with IQE045N10N5 and IQE080N10N5 in PG-TSON-8, offering lower R_DS(on) and improved Q_g/R_DS(on) ratio. Layout reuse is possible, but gate drive strength and PCB thermal relief should be verified due to higher peak current capability (85 A vs. 70 A).