Infineon Technologies IQE220N15NM5CGSCATMA1

Overview

IQE220N15NM5CGSCATMA1 from Infineon Technologies is an N-channel 150 V, 22 mΩ R_DS(on) OptiMOS™ 5 power MOSFET in PG-WHTFN-9 package, optimized for high-efficiency synchronous rectification in SMPS. It delivers 44 A continuous drain current at T_C = 25 °C, features 100% avalanche testing, and integrates an internal body diode with 25 ns reverse recovery time.

For engineers reviewing the IQE220N15NM5CGSCATMA1 datasheet, IQE220N15NM5CGSCATMA1 pinout, IQE220N15NM5CGSCATMA1 application, or IQE220N15NM5CGSCATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g = 14.4 nC for fast switching, thermal resistance R_thJC = 0.8 °C/W (bottom), and PG-WHTFN-9 footprint compatibility with high-power density layouts.

Technical Context

This device implements a trench-based silicon MOSFET architecture with enhanced charge balancing for reduced conduction and switching losses. Its gate threshold voltage (V_GS(th) = 3.0–4.6 V) supports standard 10 V gate drivers, while low Q_gd = 3.1–4.7 nC and C_iss = 1100–1400 pF enable stable operation in hard-switched and resonant topologies.

The integrated body diode exhibits V_SD = 0.86–1.2 V at I_F = 22 A and t_rr = 25–50 ns under dI_F/dt = 100 A/µs, making it suitable for bidirectional current paths in LLC and phase-shifted full-bridge converters where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Pinout & Package

PG-WHTFN-9 is a 9-pin thermally enhanced wettable flank package with exposed drain pad on bottom side. Pin 1–4 are source terminals, Pin 5–8 are parallel-connected drain terminals, and Pin 9 is the gate terminal. The internal body diode anode connects to source (Pins 1–4), cathode to drain (Pins 5–8).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Compared with IPB180N15N5 and IRFH7185TRPBF, IQE220N15NM5CGSCATMA1 offers the best balance of low R_DS(on), moderate Q_g, and thermally optimized PG-WHTFN-9 packaging-making it ideal for space-constrained, high-efficiency SMPS where both conduction and switching losses must be minimized simultaneously.

Availability

IQE220N15NM5CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term manufacturability.

Supply support for IQE220N15NM5CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and JEDEC standards.

This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-frequency, high-efficiency power conversion in server, telecom, and industrial SMPS-emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum junction temperature rating for IQE220N15NM5CGSCATMA1?

The device is rated for continuous operation from –55 °C to +175 °C junction temperature. This 175 °C limit enables reliable use in high-ambient environments such as enclosed telecom chassis or industrial enclosures without derating below full current rating until case temperature exceeds 100 °C, as confirmed by Figure 2 in the Rev. 2.0 datasheet.

Does IQE220N15NM5CGSCATMA1 require a gate resistor for stable switching?

Yes-a 1.6 Ω external gate resistor is specified in the datasheet's dynamic test conditions (Table 5) to control dV/dt and prevent oscillation. Using this value achieves measured t_r = 2 ns and t_f = 2 ns; lower values risk shoot-through in half-bridge configurations, while higher values increase switching losses disproportionately.

Can IQE220N15NM5CGSCATMA1 be used in paralleled configurations?

Yes-the device's positive temperature coefficient for R_DS(on) (shown in Diagram 9) ensures inherent current sharing when multiple units are paralleled. Layout symmetry and matched gate drive paths are required; the 9-pin PG-WHTFN-9 package supports uniform thermal coupling across parallel devices mounted on shared copper area.

Is the internal body diode suitable for freewheeling in non-synchronous topologies?

Yes-the diode is fully characterized with I_S = 44 A continuous and t_rr = 25–50 ns. However, its V_SD = 0.86–1.2 V at 22 A is higher than Schottky alternatives, so it is recommended only for synchronous rectification or low-duty-cycle freewheeling where conduction loss is secondary to layout simplicity and cost.