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Vishay Siliconix IRCZ34PBF
- Part No.:
- IRCZ34PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-5
- Datasheet:
-
IRCZ34PBF.pdf
- Description:
- MOSFET N-CH 60V 30A TO220-5
- Quantity:
- Payment:
- Shipping:
Inventory:7,174
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Product details
Overview
IRCZ34PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 30A HEXFET® Power MOSFET with integrated current-sensing capability (HEXSense), 0.050Ω RDS(on), 175°C maximum junction temperature, and TO-220 package - designed for high-efficiency DC-DC converters and motor control stages requiring real-time current monitoring.
For engineers reviewing the IRCZ34PBF datasheet, IRCZ34PBF pinout, IRCZ34PBF application, or IRCZ34PBF equivalent, this device delivers verified current-sensing ratio (1340–1480:1), fast switching (ton = 120ns, toff = 81ns), low gate charge (Qg = 46nC), and rugged avalanche performance (EAS = 15mJ) in industrial power conversion designs.
Technical Context
The IRCZ34PBF implements a Kelvin-source-based HEXSence architecture that separates sensing and power source paths to eliminate common-source inductance errors during high-di/dt operation. Its gate threshold voltage (2.0–4.0V) and transconductance (9.4S) support direct drive from microcontrollers or gate drivers without level-shifting.
It features a body diode with 1.6V forward voltage at 30A and 120–230ns reverse recovery time, enabling synchronous rectification in buck converters. The device's thermal resistance (RθJC = 1.7°C/W) and linear derating factor (0.59W/°C) enable stable operation up to 175°C junction temperature under forced-air or heatsink-cooled conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - supports 48V bus systems with 20% margin against transients |
| RDS(on) | 0.050Ω @ VGS = 10V, ID = 18A - enables <1.5W conduction loss at 30A |
| ID (continuous) | 30A @ TC = 25°C - rated for sustained high-current output stage use |
| Qg | 46nC - allows efficient 100kHz+ switching with moderate gate driver strength |
| Sense ratio (r) | 1340–1480:1 - provides accurate, isolated current feedback without external shunt |
| EAS | 15mJ - withstands single-pulse inductive energy without failure in motor drive clamping |
| TJ max | +175°C - enables operation in sealed enclosures or high-ambient industrial environments |
Pinout & Package
IRCZ34PBF is housed in a standard TO-220AB package with insulated tab, featuring three main terminals (Drain, Source, Gate) plus two dedicated Kelvin sense leads (Sense Source, Sense Drain) for HEXSence functionality. Mounting torque: 10 lbf·in (1.1 N·m).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main power drain connection | High-current path to load; electrically connected to metal tab |
| Source (S) | Main power source return | Carries full load current; referenced to system ground |
| Gate (G) | Control input | Accepts 0–10V logic-level or PWM signal to switch MOSFET |
| Sense Source (SS) | Kelvin sense reference | Provides low-noise, inductance-free current-sense return path |
| Sense Drain (SD) | Kelvin sense output | Delivers scaled-down replica of drain current (1/1340–1/1480) |
Key Features
| Feature | Design Value |
|---|---|
| HEXSense current sensing | Integrated 1340–1480:1 current mirror eliminates need for external shunt resistor and associated PCB area/power loss |
| Dynamic dv/dt rating | 4.5V/ns immunity ensures reliable operation during fast voltage transitions in hard-switched topologies |
| Fast switching performance | Turn-on delay 13ns + rise time 100ns; turn-off delay 29ns + fall time 52ns - enables >200kHz converter designs |
| Simple drive requirements | Logic-level compatible (VGS(th) = 2.0–4.0V) and low Qg (46nC) allow direct MCU GPIO or low-power gate driver use |
| 175°C operating temperature | Enables deployment in thermally constrained spaces (e.g., enclosed motor drives, sealed power supplies) without derating |
Applications
| Brushless DC Motor Control | Industrial DC-DC Converters |
|---|---|
Use Scenario: Three-phase inverter stage driving BLDC motors in HVAC blowers or industrial pumps. IC Role / Device Role / Timing Role: High-side/low-side switching element with real-time phase current feedback via HEXSence. Use Value: Eliminates external current shunts and improves overcurrent protection response time by 3× vs. sampled analog sensing. | Use Scenario: Primary-side synchronous rectifier in 48V-to-12V isolated DC-DC modules for factory automation. IC Role / Device Role / Timing Role: Main power switch with integrated current sensing for adaptive dead-time control and cycle-by-cycle current limiting. Use Value: Reduces component count by 4 parts (shunt + op-amp + filter + ADC input) while improving measurement bandwidth to >1MHz. |
| Uninterruptible Power Supplies | Electric Vehicle Onboard Chargers |
Use Scenario: Bidirectional DC link switch in UPS inverters handling 3kVA loads. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rated MOSFET managing regenerative braking energy flow and battery charging paths. Use Value: 15mJ EAS rating prevents failure during line surge events; 175°C rating sustains operation during extended backup runtime. | Use Scenario: Secondary-side isolation barrier switch in 6.6kW OBC AC/DC front-end stages. IC Role / Device Role / Timing Role: Current-sensing power switch enabling precise input current shaping and harmonic mitigation per IEC 61000-3-2 Class A. Use Value: HEXSence ratio stability (<±2% over 25–150°C) ensures compliant THD across full thermal operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power MOSFET with current-sensing applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF3710PBF | No current-sensing capability; higher RDS(on) (0.056Ω); same TO-220 package | Requires external shunt and signal conditioning circuitry for current monitoring | Select when HEXSence is unnecessary and cost minimization is prioritized over sensing integration |
| STP60NF06 | 60V/60A rating; no integrated sensing; higher gate charge (120nC); different pinout (TO-220FP) | Lacks Kelvin-source structure; unsuitable for high-di/dt current sensing without layout compromises | Choose only for non-sensing, higher-current applications where footprint compatibility permits rework |
Compared with IRF3710PBF and STP60NF06, the IRCZ34PBF uniquely integrates precision current mirroring with low-inductance Kelvin connections - delivering measurable BOM reduction, improved thermal stability of sensing, and elimination of PCB-level current-path asymmetry errors in closed-loop power systems.
Availability
IRCZ34PBF is available at Aetrix Electronics and suitable for brushless DC motor control, industrial DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRCZ34PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap devices.
The IRCZ34PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-reliability industrial power conversion where integrated current sensing, ruggedness, and thermal resilience are critical design requirements.
FAQ
What is the HEXSence current-sensing ratio for IRCZ34PBF?
The IRCZ34PBF features a guaranteed HEXSence current-sensing ratio of 1340–1480:1 across its operating range. This means the sense drain (SD) terminal delivers a precise, scaled-down replica of the main drain current - for example, 30A on the drain yields 20.1–22.4mA at SD. The ratio remains stable over temperature and gate voltage, as confirmed in Figures 15–17 of the official datasheet.
Does IRCZ34PBF require a separate gate driver IC?
The IRCZ34PBF can be driven directly by many microcontrollers due to its logic-compatible gate threshold (2.0–4.0V) and moderate total gate charge (46nC). However, for high-frequency (>100kHz) or high-current applications, a dedicated gate driver (e.g., Infineon 1EDN7512B) is recommended to ensure clean, fast switching and minimize Miller-induced shoot-through risk in bridge configurations.
How does the Kelvin-source configuration in IRCZ34PBF improve current sensing accuracy?
The IRCZ34PBF uses physically separate sense-source (SS) and sense-drain (SD) terminals to isolate the current-sensing path from high-di/dt power loops. This eliminates voltage error caused by common-source inductance (LS = 7.5nH), ensuring the sensed signal reflects true drain current - not distorted by switching transients. This is validated in Figure 18's test circuit and critical for cycle-by-cycle protection in motor drives.
What is the maximum continuous drain current for IRCZ34PBF at 100°C case temperature?
The IRCZ34PBF supports 21A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating from 30A (at 25°C) follows the device's linear derating factor of 0.59W/°C and accounts for reduced thermal headroom - essential for thermal design validation in convection-cooled industrial enclosures.
Can IRCZ34PBF replace standard TO-220 MOSFETs like IRFZ44N without PCB changes?
No - IRCZ34PBF has five terminals (Drain, Source, Gate, Sense Source, Sense Drain), whereas IRFZ44N has only three. Direct replacement requires PCB redesign to accommodate the two additional Kelvin sense pins and updated gate/sense routing. Attempting pin-for-pin substitution will disable HEXSence functionality and may cause instability due to unconnected sense leads.
IRCZ34PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- HEXFET®
- Package/Case:
- TO-220-5
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 46 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- Current Sensing
- Power Dissipation (Max):
- 88W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-5
IRCZ34PBF FAQ
1.How can I place an order for IRCZ34PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRCZ34PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRCZ34PBF reliable?
The price and inventory of IRCZ34PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRCZ34PBF is usually 5 days.
3.What payment methods are accepted for IRCZ34PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRCZ34PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRCZ34PBF?
IRCZ34PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRCZ34PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRCZ34PBF?
For technical support, including IRCZ34PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRCZ34PBF requirements.
6.How does Aetrix verify that IRCZ34PBF is sourced from the original manufacturer or authorized distributors?
All IRCZ34PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRCZ34PBF meets industry standards.
7.What is the process for return or replacement of IRCZ34PBF?
All IRCZ34PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRCZ34PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRCZ34PBF part is unused and in its original packaging.
Return procedure for IRCZ34PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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