Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF100B202

Name: IRF100B202
Brand: Infineon Technologies
SKU: IRF100B202
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF100B202

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF100B202.pdf

Description:: MOSFET N-CH 100V 97A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,919

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF100B202 from Infineon Technologies (formerly International Rectifier) is a 100V, 97A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-efficiency switching in motor drives and DC/DC converters. It delivers 7.2mΩ typical R_DS(on) at V_GS = 10V, supports 380A pulsed drain current, and features enhanced body diode dV/dt and dI/dt capability for robust synchronous rectification and half-bridge operation.

For engineers reviewing the IRF100B202 datasheet, IRF100B202 pinout, IRF100B202 application, or IRF100B202 equivalent, key selection criteria include its 0.68°C/W junction-to-case thermal resistance, 77nC total gate charge, 189mJ single-pulse avalanche energy rating, and validated performance in BLDC motor control and resonant-mode power supplies.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low conduction loss and high dynamic ruggedness. Its gate threshold voltage (2.0–4.0V) enables reliable turn-on with standard 5V or 10V logic-level drivers, while the 123S forward transconductance ensures stable gain across temperature.

The device integrates a fast, soft-recovery body diode with 51ns reverse recovery time (T_J = 25°C) and 105nC Q_rr, enabling efficient operation in hard-switched and synchronous rectifier topologies without external snubbers. Avalanche-rated design supports unclamped inductive switching up to 292mJ under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in DC/AC inverters and OR-ing switches.
R_DS(on) typ.	7.2mΩ @ V_GS = 10V, I_D = 58A - Enables <1.2W conduction loss at 58A, critical for thermal management in compact motor drive PCBs.
I_D continuous	97A @ T_C = 25°C - Supports high-current half-bridge legs without parallel devices in brushed/BLDC controllers.
Q_g total	77nC - Determines gate driver power requirement; compatible with common 1A–2A peak-output drivers like IR2110 or UCC27531.
E_AS single pulse	189mJ - Allows safe unclamped inductive switching in flyback or LLC primary-side switches without external clamping.
trr / Q_rr	51ns / 105nC - Minimizes switching loss and EMI during body-diode commutation in synchronous buck and bridge configurations.
R_θJC	0.68°C/W - Enables direct heatsink mounting with predictable junction temperature rise; simplifies thermal design vs. DPAK alternatives.

Pinout & Package

IRF100B202 uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering mechanical robustness and proven thermal performance in high-power applications. The three-terminal configuration supports straightforward PCB layout and heatsink integration.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10V logic-level signal to fully enhance channel; 2.4Ω internal gate resistance reduces ringing risk with moderate gate resistors.
D (Drain)	High-side current path	Connected to heatsink tab; must be electrically isolated unless system ground references drain potential.
S (Source)	Return path / reference node	Serves as local ground for gate drive; source inductance directly impacts switching speed and dV/dt stress.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	28V/ns peak recovery dv/dt at T_J = 175°C - Prevents false turn-on during fast voltage transients in high-frequency bridge legs.
Fully characterized avalanche SOA	292mJ tested single-pulse energy at T_J = 25°C - Enables reliable operation in unclamped inductive loads without derating.
Lead-free, RoHS-compliant construction	Halogen-free epoxy and matte tin-plated leads - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility.
Low C_oss eff. (TR)	385pF - Reduces turn-off energy loss in ZVS and resonant converters operating above 100kHz.
Thermally limited E_AS	189mJ - Defined by junction temperature limits, not device failure; allows precise thermal budgeting in repetitive avalanche scenarios.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: H-bridge control of 24–48V DC motors in power tools and industrial actuators.

IC Role / Device Role / Timing Role: High-side and low-side switch in full-bridge topology; handles bidirectional current up to 97A continuous.

Use Value: 7.2mΩ R_DS(on) minimizes I²R heating during stall conditions, extending tool runtime and reducing heatsink size.

Use Scenario: Six-step commutation in 3-phase BLDC inverters for HVAC blowers and e-bike controllers.

IC Role / Device Role / Timing Role: Low-side switch with fast body-diode recovery; synchronously rectifies back-EMF during freewheeling.

Use Value: 51ns trr and 105nC Q_rr reduce switching loss by >15% vs. standard MOSFETs, improving inverter efficiency at 20kHz PWM.

Synchronous Rectification

DC/DC Converter Primary Switch

Use Scenario: Secondary-side rectification in isolated 12V–48V output telecom and server PSUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes; driven by transformer-coupled or controller-synchronized gate signals.

Use Value: Body diode's 1.3V V_SD and soft recovery suppress voltage spikes, eliminating need for snubbers and reducing EMI filter cost.

Use Scenario: Primary-side switch in 300W LLC resonant converters for LED drivers and industrial power supplies.

IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable main switch; withstands 100V bus with margin for transient overvoltage.

Use Value: 0.68°C/W R_θJC enables direct heatsink mounting at 200W dissipation, avoiding complex thermal vias or copper pours.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	100V, 100A, 6.5mΩ R_DS(on), 105nC Q_g, TO-220FP package (isolated but smaller footprint)	Lower R_DS(on) improves conduction loss, but higher Q_g increases gate drive loss; FP variant has lower power dissipation rating (100W vs. 221W)	Prefer when board space is constrained and gate drive capability supports higher Q_g; avoid in thermally limited enclosures requiring full 221W rating.
IXTH100N10L2	100V, 100A, 7.5mΩ R_DS(on), 65nC Q_g, TO-247AC package (higher thermal mass, no isolated tab)	Lower gate charge reduces driver stress; TO-247 offers better thermal cycling life but requires insulating washer for heatsink mounting	Choose for high-reliability industrial inverters where long-term thermal cycling exceeds TO-220 limits; verify heatsink isolation method.

Compared with STP100N10F7 and IXTH100N10L2, IRF100B202 balances lowest gate charge among TO-220 variants (77nC), highest power rating (221W), and proven avalanche ruggedness-making it optimal for cost-sensitive, thermally demanding motor drive designs where TO-220 form factor is mandated.

Availability

IRF100B202 is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across automotive aftermarket, industrial automation, and renewable energy OEM programs.

Supply support for IRF100B202 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

This part belongs to the StrongIRFET™ family, engineered specifically for high-current, high-ruggedness switching in motor control, industrial power conversion, and battery-powered systems where reliability under repetitive stress is critical.

FAQ

What is the maximum recommended gate voltage for IRF100B202?

The absolute maximum gate-to-source voltage is ±20V per datasheet specifications. For reliable long-term operation, gate drive should be limited to +10V to +15V for full enhancement and –5V to –10V for fast turn-off. Exceeding +15V increases gate oxide stress without meaningful R_DS(on) improvement, while negative bias below –10V risks gate leakage or damage.

Can IRF100B202 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Fig 6) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (≥5Ω) to damp oscillation. Thermal coupling via shared heatsink is essential; mismatched case temperatures cause current imbalance exceeding 15% at full load.

Does IRF100B202 require a gate resistor, and what value is recommended?

A gate resistor is mandatory to control dV/dt and prevent oscillation. For 100kHz switching with a 1A driver, 5–10Ω is typical. Lower values (2–5Ω) suit high-speed ZVS applications; higher values (15–22Ω) reduce EMI in noise-sensitive environments. The device's 2.4Ω internal gate resistance must be included in total loop resistance calculations.

Is the TO-220AB package lead-free and RoHS compliant?

Yes-IRF100B202 is explicitly certified lead-free, RoHS compliant, and halogen-free per datasheet revision August 2014. The matte tin-plated leads meet J-STD-020 MSL1 requirements, supporting standard Pb-free reflow profiles with peak temperature up to 260°C for 10 seconds.

IRF100B202 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 97A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.6mOhm @ 58A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 116 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4476 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 221W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF100B202 FAQ

1.How can I place an order for IRF100B202 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF100B202 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF100B202 reliable?

The price and inventory of IRF100B202 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF100B202 is usually 5 days.

3.What payment methods are accepted for IRF100B202?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF100B202 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF100B202?

IRF100B202 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF100B202 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF100B202?

For technical support, including IRF100B202 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF100B202 requirements.

6.How does Aetrix verify that IRF100B202 is sourced from the original manufacturer or authorized distributors?

All IRF100B202 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF100B202 meets industry standards.

7.What is the process for return or replacement of IRF100B202?

All IRF100B202 units undergo pre-shipment inspection (PSI). If there is an issue with IRF100B202, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF100B202 part is unused and in its original packaging.

Return procedure for IRF100B202:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…