Infineon Technologies IRF2204PBF

Overview

IRF2204PBF from Infineon Technologies is a 40V, 210A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring 3.0–3.6 mΩ R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and 460 mJ single-pulse avalanche energy. It serves as a high-current synchronous rectifier or main switch in industrial DC motor drives and high-efficiency DC-DC converters.

For engineers reviewing the IRF2204PBF datasheet, IRF2204PBF pinout, IRF2204PBF application, or IRF2204PBF equivalent, key selection criteria include its 850A pulsed drain current capability, 2.2 W/°C linear derating factor, 130–200 nC total gate charge, and validated repetitive avalanche operation up to T_jmax.

Technical Context

This MOSFET employs advanced planar silicon processing to achieve ultra-low on-resistance per die area while maintaining robust unclamped inductive switching performance. Its 175°C rated junction temperature and 0.45°C/W junction-to-case thermal resistance support high-power density designs without forced cooling.

The device integrates a fast-recovery body diode with 68–100 ns reverse recovery time and 120–180 nC Q_rr, enabling efficient hard-switched topologies. Gate charge parameters (Q_gs = 35–52 nC, Q_gd = 39–59 nC) are optimized for low-loss 2.5Ω gate drive impedance operation.

Key Specifications

Pinout & Package

IRF2204PBF is housed in a through-hole TO-220AB package with isolated tab. The case is electrically connected to the Drain terminal, requiring insulating mounting hardware when used in non-ground-referenced configurations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with STL220N4F7AG and IXTH220N40L2, IRF2204PBF offers the best balance of isolated-tab safety, validated repetitive avalanche, and TO-220AB manufacturability-making it optimal for cost-sensitive industrial inverters where reliability under transient overload is mandatory.

Availability

IRF2204PBF is available at Aetrix Electronics and suitable for industrial motor drives, high-current DC-DC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRF2204PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF HEXFET® product line was engineered for high-efficiency power conversion in industrial motor control, UPS, and renewable energy systems-emphasizing ruggedness, thermal stability, and repeatable avalanche performance under real-world fault conditions.

FAQ

What is the maximum gate-source voltage rating for IRF2204PBF?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended drive is 10–15 V for full enhancement with margin against ringing-induced overvoltage. Gate drivers must limit dV/dt to <5 V/ns at the gate node to prevent false turn-on during high dv/dt switching events.

Can IRF2204PBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (0.041 V/°C) ensures inherent current sharing. Parallel operation requires matched gate drive impedances (<5% variation), symmetrical PCB layout, and individual gate resistors (≥5Ω) to dampen oscillation. Thermal coupling between devices must be minimized to avoid thermal runaway.

Does IRF2204PBF require a heatsink for 150A continuous operation?

Yes-a heatsink with ≤0.5°C/W thermal resistance is required. At 150A and 3.6mΩ R_DS(on), conduction loss is 81W. With R_θJC = 0.45°C/W and ambient at 50°C, a heatsink thermal resistance of 0.42°C/W keeps T_j ≤150°C. Forced air (200 LFM) reduces required heatsink size by ~35%.

Is the body diode suitable for synchronous rectification at 200kHz?

Yes-the 68 ns t_rr and 120 nC Q_rr support synchronous rectification up to 300kHz in hard-switched buck converters. However, zero-voltage switching (ZVS) is recommended above 150kHz to minimize diode reverse recovery losses and associated EMI. Layout must minimize source inductance (<2nH) to preserve diode softness.