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Infineon Technologies IRF3546MTRPBF
- Part No.:
- IRF3546MTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 41-PowerVFQFN
- Datasheet:
-
IRF3546MTRPBF.pdf
- Description:
- MOSFET 4N-CH 25V 16A 41QFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,435
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Product details
Overview
IRF3546MTRPBF from Infineon Technologies (formerly International Rectifier) is a dual-phase integrated power block containing two matched pairs of control and synchronous MOSFETs (Q1–Q4) in a single 6 mm × 8 mm PQFN package. It delivers 30 A per phase at input voltages from 4.5 V to 21 V, achieves up to 94% peak efficiency at 1.2 V output, and integrates monolithic Schottky diodes in Q2/Q4 to suppress reverse recovery losses - optimized for CPU/GPU core voltage regulation in servers and high-end notebooks.
For engineers reviewing the IRF3546MTRPBF datasheet, IRF3546MTRPBF pinout, IRF3546MTRPBF application, or IRF3546MTRPBF equivalent, key selection criteria include per-phase current capability (30 A), ultra-low gate resistance (Rg = 0.4–0.6 Ω), dual-side cooling support, and validated thermal resistance (θJB = 1.6 °C/W) for high-density buck converter layouts.
Technical Context
The IRF3546MTRPBF implements a two-phase synchronous buck topology with independent high-side (Q1/Q3) and low-side (Q2/Q4) MOSFETs per channel, each pair co-packaged to minimize loop inductance and PCB layout complexity. Its internal structure integrates dedicated VIN1/VIN2 pads, SW1/SW2 switch nodes, and separate GATEH/GATEL drive terminals for precise timing control.
Thermal design leverages dual-side cooling via exposed top copper and bottom PGND pads, supported by low junction-to-board thermal resistance (θJB = 1.6 °C/W). The monolithic Schottky diode in each synchronous MOSFET (Q2/Q4) eliminates external body diode conduction and reduces dead-time dependency during transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Current | 30 A per phase - enables compact two-phase VR designs for 60 A total load without paralleling discrete devices. |
| Peak Efficiency | 94% at 1.2 V/300 kHz - achieved with ultra-low RDS(ON) (1.35 mΩ typ. @10 V for Q2/Q4) and minimized switching loss. |
| VIN Range | 4.5 V to 21 V - supports 12 V input systems common in server CPU/GPU VRMs and DDR memory regulators. |
| Rg (Gate Resistance) | 0.4 Ω (Q2/Q4), 0.6 Ω (Q1/Q3) - enables fast, low-loss gate drive with minimal external gate resistor need. |
| Package Thermal Resistance | θJB = 1.6 °C/W - allows direct thermal coupling to PCB ground plane for high-power density without heatsinks. |
| Integrated Schottky Diode | Monolithic in Q2/Q4 - eliminates reverse recovery charge (Qrr = 30–45 nC) and associated EMI in hard-switched buck stages. |
| Switch Node Layout | SW1 (pins 29–36), SW2 (pins 21–28) - isolated high-current paths reduce crosstalk and enable symmetric two-phase routing. |
Pinout & Package
IRF3546MTRPBF uses a 42-pin PQFN package (6 mm × 8 mm × 0.9 mm) with thermally enhanced top-side copper and dual-side cooling capability. Exposed PGND pads (pins 8, 19, 20, 38, 39, 42) provide low-inductance return paths and thermal conduction to PCB layers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIN1 (pins 1, 40, 41) | Phase 1 high-side drain supply | Connects to drains of Q1; requires local 10 µF + 0.1 µF ceramic decoupling for high di/dt stability. |
| VIN2 (pins 15–17) | Phase 2 high-side drain supply | Connects to drains of Q3; independent input path enables interleaved layout and reduced input ripple. |
| SW1 (pins 29–36) | Phase 1 switch node | Source of Q1 / drain of Q2; high-current AC node requiring short, wide copper for low EMI and loss. |
| SW2 (pins 21–28) | Phase 2 switch node | Source of Q3 / drain of Q4; electrically isolated from SW1 to prevent cross-phase coupling. |
| GATEH1 (pin 7), GATEH2 (pin 9) | High-side gate drive inputs | Drive gates of Q1 and Q3; require low-impedance gate drivers due to Qg = 9.7–15 nC (Q1/Q3). |
| GATEL1 (pin 37), GATEL2 (pin 18) | Low-side gate drive inputs | Drive gates of Q2 and Q4; higher Qg (22–33 nC) demands robust gate drive strength and layout symmetry. |
| PGND (pins 8, 19, 20, 38, 39, 42) | Power ground return | All internally connected; must be tied to solid PCB ground plane with multiple vias for thermal and current handling. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-phase integration | Two complete buck phases (Q1/Q2 + Q3/Q4) in one PQFN - cuts board area by >40% vs. discrete solutions. |
| Ultra-low Rg MOSFETs | Rg = 0.4–0.6 Ω enables <15 ns turn-on delay and <7 ns fall time - supports >1 MHz switching without excessive drive loss. |
| Monolithic Schottky in Q2/Q4 | Eliminates body diode reverse recovery (trr = 23–35 ns) and reduces dead-time sensitivity in synchronous rectification. |
| Optimized thermal path | θJB = 1.6 °C/W and dual-side cooling allow >60 W dissipation on standard 4-layer boards without heatsinks. |
| Low-inductance package | Proprietary PQFN minimizes source inductance and gate loop area - critical for stable 30 A/phase operation at high dv/dt. |
Applications
| CPU Core Voltage Regulation | GPU Power Delivery |
|---|---|
|
Use Scenario: High-current, low-voltage DC-DC conversion for Intel/AMD server CPUs operating at 1.2 V ±3% with transient loads up to 60 A. IC Role / Device Role / Timing Role: Dual-phase synchronous buck power block providing regulated Vcore with interleaved switching to reduce input/output ripple. Use Value: Achieves 94% efficiency at 1.2 V/300 kHz while fitting within 12 mm × 12 mm footprint - enabling dense multi-phase VRMs on limited motherboard real estate. |
Use Scenario: Compact, high-efficiency power stage for NVIDIA/AMD discrete GPUs requiring dynamic voltage scaling between 0.8 V and 1.3 V under 50 A peak load. IC Role / Device Role / Timing Role: Two-phase integrated power block delivering tightly regulated GPU core voltage with fast transient response (<500 ns load step recovery). Use Value: Integrated Schottky diodes in Q2/Q4 eliminate reverse recovery spikes, reducing EMI filtering requirements and enabling smaller output capacitors (22 µF ×5 instead of ×8). |
| DDR Memory VRM | High-Density Server VR13 |
|
Use Scenario: Dual-rail power delivery for DDR4/DDR5 memory subsystems requiring 1.1 V or 1.05 V at up to 40 A with tight voltage tolerance (±15 mV). IC Role / Device Role / Timing Role: Synchronous buck power block operating in forced PWM mode to maintain low noise during memory read/write bursts. Use Value: Low RDS(on) (1.35 mΩ typ. for Q2/Q4) minimizes conduction loss at 1.1 V, improving system-level power budget by >1.2 W per rail vs. discrete alternatives. |
Use Scenario: VR13-compliant 12 V input, 1.8 V output power stage for enterprise server motherboards with strict PMBus compliance and telemetry requirements. IC Role / Device Role / Timing Role: Dual-phase integrated power block interfacing with digital PWM controllers (e.g., ISL68127) via GATEH/GATEL signals for adaptive phase shedding. Use Value: Matched Q1/Q3 and Q2/Q4 parameters ensure balanced current sharing across phases - critical for VR13 current balance spec (<5% mismatch at full load). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-phase integrated power block applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR3557MTRPBF | Higher current rating (40 A/phase), lower RDS(on) (0.95 mΩ Q2/Q4), but larger 7 mm × 8 mm package and higher gate charge (Qg = 42 nC). | Targeted at next-gen CPU VRMs requiring >60 A total; less suitable for space-constrained GPU modules. | Select when phase current exceeds 30 A or when VR14/IMVP9 compliance is required; verify PCB pad layout compatibility. |
| MP87653GQ-Z | Single-chip dual-phase controller + power stage (integrated driver); no external gate drivers needed, but fixed 1.2 V/1.8 V outputs and no programmable VOUT. | Best for cost-sensitive embedded systems with fixed output rails; lacks flexibility for dynamic voltage scaling in CPUs/GPUs. | Choose for simplified BOM and layout where output voltage is static and controller integration is preferred over discrete gate drive tuning. |
Compared with IR3557MTRPBF and MP87653GQ-Z, the IRF3546MTRPBF offers optimal balance of current density (30 A/phase in 6×8 mm), thermal performance (θJB = 1.6 °C/W), and gate drive flexibility - making it ideal for high-performance, layout-sensitive VRMs where discrete driver control and voltage programmability are essential.
Availability
IRF3546MTRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulation, GPU power delivery, and DDR memory VRMs requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for IRF3546MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for computing, industrial, and automotive applications.
The IRF3546MTRPBF belongs to Infineon's Integrated Power Block (IPB) product line, engineered specifically for high-frequency, high-density DC-DC converters in datacenter and client computing platforms demanding sub-1.3 V output regulation.
FAQ
What is the maximum recommended continuous output current per phase for IRF3546MTRPBF?
The IRF3546MTRPBF is rated for 30 A continuous per phase at TC = 70°C with proper PCB thermal design (8-layer board, dual-side cooling, and ≥6 thermal vias per PGND pad). At TC = 25°C, the absolute maximum continuous drain current is 20 A for Q2/Q4 and 16 A for Q1/Q3, but system-level derating to 30 A/phase ensures reliability under transient loads and ambient temperature variation.
Does IRF3546MTRPBF require external Schottky diodes for synchronous rectification?
No. Each synchronous MOSFET (Q2 and Q4) integrates a monolithic Schottky diode, eliminating the need for external diodes and removing reverse recovery losses (Qrr = 30–45 nC) and associated EMI. This integration also reduces dead-time sensitivity and simplifies gate timing design compared to discrete MOSFET + diode solutions.
Can IRF3546MTRPBF be used in single-phase configurations?
Yes - though optimized for two-phase operation, IRF3546MTRPBF supports single-phase use by driving only one channel (e.g., GATEH1/GATEL1 active, GATEH2/GATEL2 grounded). However, thermal and electrical performance remains identical to half the dual-phase rating: 30 A max, with VIN1 and SW1 used exclusively, while VIN2/SW2 remain unconnected and PGND pads fully utilized for thermal conduction.
What is the significance of the 1.6 °C/W θJB specification for IRF3546MTRPBF?
The θJB (junction-to-board) value of 1.6 °C/W quantifies thermal resistance from die to PCB copper via the bottom PGND pads. With 60 W total dissipation (30 A × 0.002 Ω × 2 phases), this yields only ~96 °C rise above board temperature - enabling reliable operation on standard FR-4 without heatsinks or forced airflow, provided ≥4 oz copper and ≥12 thermal vias per PGND pad are implemented.
IRF3546MTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 41-PowerVFQFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 4 N-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 25V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc), 20A (Tc)
- Rds On (Max) @ Id, Vgs:
- 3.9mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1310pF @ 13V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 41-PQFN (6x8)
IRF3546MTRPBF FAQ
1.How can I place an order for IRF3546MTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF3546MTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF3546MTRPBF reliable?
The price and inventory of IRF3546MTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3546MTRPBF is usually 5 days.
3.What payment methods are accepted for IRF3546MTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3546MTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF3546MTRPBF?
IRF3546MTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF3546MTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF3546MTRPBF?
For technical support, including IRF3546MTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3546MTRPBF requirements.
6.How does Aetrix verify that IRF3546MTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF3546MTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3546MTRPBF meets industry standards.
7.What is the process for return or replacement of IRF3546MTRPBF?
All IRF3546MTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3546MTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF3546MTRPBF part is unused and in its original packaging.
Return procedure for IRF3546MTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF3546MTRPBF Tags
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