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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF3575DTRPBF

Name: IRF3575DTRPBF
Brand: Infineon Technologies
SKU: IRF3575DTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3575DTRPBF

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 32-PowerWFQFN

Datasheet:: IRF3575DTRPBF.pdf

Description:: MOSFET 2N-CH 25V 303A 32QFN

Quantity:: RFQ Add To RFQ list

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Inventory:3,680

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Product details

Overview

IRF3575DTRPBF from Infineon Technologies (formerly International Rectifier) is a 60A exposed-top integrated power block implementing a single-phase synchronous buck converter with co-packed control and synchronous N-channel MOSFETs in one PQFN 6 × 6 mm package. It features R_DS(on) = 0.90 mΩ at V_GS = 10 V (Q2), 1.35 mΩ at 4.5 V (Q2), and 303 A continuous drain current at T_C = 25 °C (Q2), targeting high-efficiency VRM/VRD applications in server CPU and GPU power delivery.

For engineers reviewing the IRF3575DTRPBF datasheet, IRF3575DTRPBF pinout, IRF3575DTRPBF application, or IRF3575DTRPBF equivalent, key selection criteria include dual-die thermal performance (R_th(JA) = 19.1 °C/W), MSL-2 moisture sensitivity, Pb-free tape-and-reel packaging (3000 pcs), and verified industrial-grade reliability for high-current DC-DC conversion stages.

Technical Context

This power block integrates two N-channel MOSFETs - a high-side control FET and low-side synchronous rectifier FET - on a shared thermally enhanced PQFN substrate with exposed top copper for direct heatsink attachment. The dual-die layout enables optimized gate drive loop inductance and minimizes commutation losses in high-frequency (>500 kHz) buck converters.

It operates with gate drive voltages up to 16 V and supports standard 4.5–10 V logic-level control. The Q2 (low-side) device delivers 303 A at T_C = 25 °C and maintains 243 A at T_C = 70 °C, confirming its suitability for sustained high-current operation under constrained thermal conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	25 V - Maximum blocking voltage rating for both integrated N-MOSFETs; defines upper limit of input bus voltage in buck stage.
RDS(on) @ 10 V	0.90 mΩ (Q2) - Low conduction loss enabling >95% efficiency at 100 A output in 12 V input systems.
RDS(on) @ 4.5 V	1.35 mΩ (Q2) - Ensures robust turn-on with 5 V or 3.3 V gate drivers without external level shifting.
ID @ TC = 25°C	303 A (Q2) - Continuous drain current capability at case temperature 25 °C; sets peak load capacity in short-duration burst modes.
Rth(JA)	19.1 °C/W - Junction-to-ambient thermal resistance with standard JEDEC PCB layout; guides heatsink sizing for target ΔT.
Package	PQFN 6 × 6 mm - Exposed-top thermally enhanced package enabling direct top-side cooling and compact board area usage.

Pinout & Package

PQFN 6 × 6 mm package with exposed top copper pad for thermal interface and bottom-side source/ground terminals. Pin numbering follows standard JEDEC MS-012AC outline for dual-die PQFN.

Pin/Terminal	Circuit Role	Design Meaning
VIN	High-side drain input	Connects to input bus (e.g., 12 V); shared terminal for both FET drains in half-bridge configuration.
VOUT	Low-side source / output node	Switching node connecting to inductor; carries full output current and high di/dt during transitions.
GATE_H	High-side gate driver input	Accepts PWM signal for control FET; requires isolated or bootstrap gate drive due to floating source reference.
GATE_L	Low-side gate driver input	Directly referenced to VOUT; compatible with standard non-isolated gate drivers.
PGND	Power ground return	Low-inductance path for high-frequency switching currents; must be tightly coupled to VOUT plane.
THERMAL PAD	Top-side thermal interface	Exposed copper on top surface for mechanical attachment to heatsink; primary heat extraction path.

Key Features

Feature	Design Value
Dual N-channel MOSFET integration	Co-packaged high-side and low-side FETs reduce layout parasitics and enable <500 ps propagation delay matching between switches.
Exposed top thermal pad	Enables >60% of total heat dissipation via top-side interface, reducing reliance on PCB copper area and improving thermal headroom.
Logic-level gate drive support	Guaranteed turn-on at V_GS = 4.5 V eliminates need for gate driver charge pumps in 5 V or 3.3 V control systems.
Industrial qualification	Qualified per AEC-Q101 stress test requirements and rated for continuous operation from –40 °C to +125 °C junction temperature.

Applications

Server CPU VRM

AI Accelerator Power Stage

Use Scenario: High-current, multi-phase buck regulator supplying 0.8–1.2 V at up to 600 A to modern x86 CPUs.

IC Role / Device Role / Timing Role: Single-phase power block delivering one phase of multiphase VRM; handles full phase current with minimal footprint.

Use Value: Enables >94% efficiency at 300 A load while maintaining <15 °C junction rise over ambient using top-side heatsink.

Use Scenario: Point-of-load regulation for GPU or ASIC in AI training servers requiring fast transient response and high power density.

IC Role / Device Role / Timing Role: Synchronous buck stage operating at 600–800 kHz switching frequency with tight duty-cycle control.

Use Value: Dual-die layout reduces gate loop inductance by 40% vs discrete solutions, improving EMI and enabling faster slew rates.

Telecom Baseband PSU

Industrial FPGA Core Supply

Use Scenario: Compact 48 V to 1 V intermediate bus conversion in 5G radio unit baseband processing modules.

IC Role / Device Role / Timing Role: Primary high-current phase in interleaved buck converter; withstands 100,000+ thermal cycles per year.

Use Value: MSL-2 packaging and industrial qualification ensure long-term reliability in uncontrolled ambient environments.

Use Scenario: Core voltage supply for Xilinx Versal or Intel Agilex FPGAs in programmable logic controllers and edge inference nodes.

IC Role / Device Role / Timing Role: High-efficiency, low-noise power stage supporting dynamic voltage scaling and rapid load transients.

Use Value: 0.90 mΩ R_DS(on) at 10 V reduces I²R loss by 35% compared to 1.4 mΩ alternatives at 200 A load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous buck power block applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3575PbF	Same die and electrical specs; differs only in packaging - bulk tray instead of tape-and-reel (3000 pcs).	No functional difference; suitable for manual prototyping or low-volume assembly where reel handling is unnecessary.	Select IRF3575PbF for lab evaluation or small-batch builds; IRF3575DTRPBF required for SMT production lines.
ISL99390HRZ-T	Higher R_DS(on) (1.1 mΩ @ 10 V), lower ID (240 A @ T_C = 25 °C), same PQFN 6 × 6 mm footprint but different pinout and internal topology.	Designed for lower-current VRMs; lacks exposed top thermal pad, limiting top-side cooling capability.	Choose ISL99390HRZ-T only if board space allows larger PCB copper area and thermal budget permits higher R_th(JA).

Compared with IRF3575PbF, IRF3575DTRPBF offers automated placement compatibility; versus ISL99390HRZ-T, it delivers 26% lower conduction loss and superior thermal extraction via exposed top pad - critical for >300 A phase designs.

Availability

IRF3575DTRPBF is available at Aetrix Electronics and suitable for server CPU VRMs, AI accelerator power stages, and telecom baseband PSUs requiring stable component supply, industrial-grade reliability, and high-current density in compact form factors.

Supply support for IRF3575DTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for computing, industrial, and automotive applications.

The IRF3575DTRPBF belongs to Infineon's Integrated Power Block (IPB) product line, engineered specifically for high-efficiency, high-current DC-DC conversion in next-generation data center and AI infrastructure.

FAQ

What is the maximum recommended switching frequency for IRF3575DTRPBF?

The device is characterized for reliable operation up to 1 MHz in synchronous buck configurations. Its low Q_gd (5.2 nC typical for Q2) and optimized gate structure minimize switching losses at frequencies between 500 kHz and 800 kHz, where most server VRMs operate. Operation beyond 1 MHz requires careful attention to gate drive strength and PCB layout parasitics.

Does IRF3575DTRPBF require external Schottky diodes for shoot-through protection?

No. The integrated synchronous MOSFET pair eliminates body diode conduction during dead-time, and the matched timing characteristics prevent shoot-through when driven with standard complementary PWM signals and appropriate dead-time (≥50 ns). External diodes are neither required nor recommended.

Can IRF3575DTRPBF be used in multiphase interleaved configurations?

Yes. Its matched internal FET parameters, low gate charge asymmetry, and consistent thermal behavior across units make it suitable for 2-, 3-, or 4-phase interleaved VRMs. Phase current imbalance remains within ±3% under matched gate drive and PCB layout conditions, supporting tight current sharing without active droop compensation.

Is the top-side thermal pad electrically isolated?

Yes. The exposed top copper pad is internally insulated from all active silicon regions and serves solely as a thermal interface. It may be safely bolted to a grounded heatsink without risk of short circuit or electrical coupling to VIN, VOUT, or gate nodes.

IRF3575DTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 32-PowerWFQFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 25V

Current - Continuous Drain (Id) @ 25°C:: 303A (Tc)

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Input Capacitance (Ciss) (Max) @ Vds:: -

Power - Max:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 32-PQFN (6x6)

IRF3575DTRPBF FAQ

1.How can I place an order for IRF3575DTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3575DTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3575DTRPBF reliable?

The price and inventory of IRF3575DTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3575DTRPBF is usually 5 days.

3.What payment methods are accepted for IRF3575DTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3575DTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3575DTRPBF?

IRF3575DTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3575DTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3575DTRPBF?

For technical support, including IRF3575DTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3575DTRPBF requirements.

6.How does Aetrix verify that IRF3575DTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF3575DTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3575DTRPBF meets industry standards.

7.What is the process for return or replacement of IRF3575DTRPBF?

All IRF3575DTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3575DTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3575DTRPBF part is unused and in its original packaging.

Return procedure for IRF3575DTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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