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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3717TRPBF-1

Name: IRF3717TRPBF-1
Brand: Infineon Technologies
SKU: IRF3717TRPBF-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3717TRPBF-1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF3717TRPBF-1.pdf

Description:: MOSFET N-CH 20V 20A 8-SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3717TRPBF-1 from Infineon Technologies is an N-channel enhancement-mode HEXFET^® Power MOSFET in SO-8 package, rated for 20 V V_DS, 4.4 mΩ R_DS(on) at V_GS = 10 V, 20 A continuous drain current at T_A = 25°C, and optimized as a synchronous rectifier FET in isolated DC-DC converters for networking systems.

For engineers reviewing the IRF3717TRPBF-1 datasheet, IRF3717TRPBF-1 pinout, IRF3717TRPBF-1 application, or IRF3717TRPBF-1 equivalent, key selection criteria include low gate charge (22 nC typ.), fast switching (t_r = 14 ns, t_f = 6.0 ns), body diode reverse recovery charge (Q_rr = 13–19 nC), and thermal resistance R_θJA = 50 °C/W - all critical for high-frequency, high-efficiency synchronous rectification.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage of 1.55–2.45 V and exhibits negative temperature coefficient for V_GS(th) (−5.4 mV/°C), enabling inherent current sharing in parallel configurations. Its low R_DS(on) of 3.7 mΩ (typ.) at V_GS = 10 V and 25°C supports conduction loss minimization in high-current, low-voltage output rails.

The device integrates a robust intrinsic body diode with V_SD ≤ 1.0 V at I_S = 16 A and reverse recovery time t_rr = 22–32 ns, enabling reliable operation in hard-switched synchronous rectifier topologies where diode conduction precedes FET turn-on during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input bus and 5 V/3.3 V output rails in telecom DC-DC stages.
R_DS(on) max @ V_GS = 10 V	4.4 mΩ - Enables <100 mW conduction loss at 16 A RMS, critical for >95% efficiency in 48 V–12 V isolated converters.
Q_g typ.	22 nC - Low total gate charge reduces drive power and enables clean switching with standard PWM controllers (e.g., UCC2897A).
t_r/t_f	14 ns / 6.0 ns - Fast edge rates minimize overlap loss during synchronous FET commutation in 300–1000 kHz designs.
Q_rr	13–19 nC - Quantified reverse recovery charge directly impacts shoot-through risk and losses transferred to primary-side switch.
R_θJA	50 °C/W - Specifies thermal limit under standard SO-8 PCB layout (1 in² copper, 2 oz); requires heatsinking above ~8 A continuous.

Pinout & Package

IRF3717TRPBF-1 uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC) with exposed drain pad for enhanced thermal performance. Pin 1 is Gate (G), Pins 2–4 and 6–8 are Drain (D), Pin 5 is Source (S). The top-view pinout aligns with multi-vendor compatibility requirements for drop-in replacement in existing layouts.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts 0–10 V logic-level drive; low input capacitance (C_iss = 2890 pF) eases driver selection.
2,3,4,6,7,8	Drain (D)	High-current power terminal; internally paralleled pins reduce package inductance and improve current sharing.
5	Source (S)	Reference node for gate drive and current sensing; tied to output ground in synchronous buck/forward secondary side.

Key Features

Feature	Design Value
SO-8 package with exposed drain pad	Enables direct thermal coupling to PCB ground plane, reducing junction-to-board thermal resistance by ~30% vs. standard SO-8.
Low Q_gd/Q_gs1 ratio	Minimizes C_dv/dt induced turn-on risk during high dV/dt transitions on synchronous node (e.g., 48 V → 0 V edges).
RoHS-compliant, halogen-free	Meets IPC-1752A material declaration requirements for industrial and networking equipment with extended lifecycle.
MSL1 rating	Allows unlimited floor life and reflow without baking, simplifying SMT line integration and reducing manufacturing yield loss.

Applications

Server VRM Secondary Side

48 V–12 V Telecom Isolated DC-DC

Use Scenario: High-current, low-voltage output stage of multiphase server VRMs supplying CPU/GPU core power.

IC Role / Device Role / Timing Role: Synchronous rectifier FET replacing Schottky diode; switched complementary to primary-side high-side FET.

Use Value: Reduces conduction loss by >60% vs. 40 V Schottky, enabling >94% efficiency at 100 A load with 12 V output.

Use Scenario: Secondary-side synchronous rectification in 48 V input, isolated forward converter powering base station RF modules.

IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel FET operating in hard-switched mode with precise gate timing to avoid shoot-through.

Use Value: Achieves 1.2 W lower dissipation than IRF7832TRPBF at 16 A, extending thermal margin in sealed telecom enclosures.

Networking Switch PoE+ PSE

Industrial PLC Power Supply

Use Scenario: Secondary-side rectification in PoE+ (IEEE 802.3at) powered device (PD) DC-DC converters.

IC Role / Device Role / Timing Role: Synchronous FET in flyback or active-clamp forward topology, handling up to 25.5 W delivered power.

Use Value: Q_rr-optimized body diode ensures clean zero-voltage switching transition, eliminating diode ringing and EMI spikes.

Use Scenario: Output rectification in 24 V industrial PLC power supplies with wide ambient temperature range (−40°C to +85°C).

IC Role / Device Role / Timing Role: High-reliability synchronous rectifier with validated −55°C to +150°C T_J operation and MSL1 process control.

Use Value: Stable R_DS(on) drift (<1.5× at 125°C) maintains efficiency across full industrial temperature range without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7832TRPBF	R_DS(on) = 3.2 mΩ @ 10 V, Q_g = 29 nC, SO-8	Higher conduction loss margin but larger gate drive requirement; better for <300 kHz designs	Prefer when lowest R_DS(on) dominates over switching loss; verify gate driver current capability ≥2 A peak.
SiR872DP-T1-GE3	R_DS(on) = 3.0 mΩ @ 10 V, Q_g = 25 nC, PowerPAK^® SO-8	Enhanced thermal performance (R_θJA = 40 °C/W), same footprint but different thermal pad layout	Select for higher ambient temperature environments (>70°C) or space-constrained boards requiring improved θ_JA.

Compared with IRF3717TRPBF-1, IRF7832TRPBF offers lower R_DS(on) but increases gate drive loss and C_dv/dt sensitivity, while SiR872DP-T1-GE3 delivers superior thermal management at the cost of non-identical thermal pad geometry - both require layout review before substitution.

Availability

IRF3717TRPBF-1 is available at Aetrix Electronics and suitable for server VRM secondary sides, telecom isolated DC-DC converters, PoE+ powered devices, and industrial PLC power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRF3717TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification standards aligned to AEC-Q101 and IATF 16949.

The IRF3717TRPBF-1 belongs to Infineon's HEXFET^® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency synchronous rectification in low-voltage, high-current DC-DC conversion systems.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF3717TRPBF-1 supports 16 A continuous drain current at T_A = 70°C with V_GS = 10 V, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by R_θJA = 50 °C/W and junction temperature cap of 150°C, assuming standard SO-8 PCB layout with 1 in² copper area.

Does this MOSFET require a gate resistor for safe operation in synchronous rectifier circuits?

Yes - a series gate resistor (typically 2–10 Ω) is recommended to dampen ringing, control dV/dt during turn-on/off, and prevent C_dv/dt induced false turn-on. The low Q_gd/Q_gs1 ratio helps, but empirical tuning is required based on layout parasitics and controller slew rate.

Can IRF3717TRPBF-1 be used in linear regulator applications?

No - it is not characterized or qualified for linear (ohmic) operation. Its Safe Operating Area (SOA) curve shows pulse-limited operation only; sustained linear use risks thermal runaway due to positive R_DS(on) temperature coefficient above 100°C and lack of SOA derating data beyond 100 μs pulses.

Is the body diode suitable for freewheeling in non-synchronous flyback converters?

It can be used for low-duty-cycle freewheeling, but its Q_rr = 13–19 nC and t_rr = 22–32 ns make it less optimal than dedicated ultrafast diodes. In non-synchronous flyback designs above 100 kHz, reverse recovery losses may exceed conduction losses, reducing overall efficiency.

IRF3717TRPBF-1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2890 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

IRF3717TRPBF-1 FAQ

1.How can I place an order for IRF3717TRPBF-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3717TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3717TRPBF-1 reliable?

The price and inventory of IRF3717TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3717TRPBF-1 is usually 5 days.

3.What payment methods are accepted for IRF3717TRPBF-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3717TRPBF-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3717TRPBF-1?

IRF3717TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3717TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3717TRPBF-1?

For technical support, including IRF3717TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3717TRPBF-1 requirements.

6.How does Aetrix verify that IRF3717TRPBF-1 is sourced from the original manufacturer or authorized distributors?

All IRF3717TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3717TRPBF-1 meets industry standards.

7.What is the process for return or replacement of IRF3717TRPBF-1?

All IRF3717TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF3717TRPBF-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3717TRPBF-1 part is unused and in its original packaging.

Return procedure for IRF3717TRPBF-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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