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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF40B207

Name: IRF40B207
Brand: Infineon Technologies
SKU: IRF40B207
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF40B207

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF40B207.pdf

Description:: MOSFET N-CH 40V 95A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF40B207 from Infineon Technologies (formerly International Rectifier) is a 40V, 95A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-current switching in motor drives and DC/DC converters. It delivers typ. 3.6 mΩ R_DS(on) at V_GS = 10 V, supports 380 A pulsed drain current, and features enhanced body diode dV/dt (6.4 V/ns) and dI/dt capability for robust synchronous rectification and half-bridge operation.

For engineers reviewing the IRF40B207 datasheet, IRF40B207 pinout, IRF40B207 application, or IRF40B207 equivalent, this device is selected for brushed/BLDC motor control, OR-ing power switches, resonant-mode supplies, and inverters where low conduction loss, avalanche ruggedness (E_AS = 85–167 mJ), and fast switching (Q_g = 45–68 nC) are critical.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low R_DS(on) while maintaining strong dynamic dV/dt immunity and fully characterized avalanche SOA. Its gate threshold voltage (2.2–3.9 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device integrates a fast, soft-recovery body diode (t_rr = 21–22 ns, Q_rr = 13–15 nC) and exhibits low C_oss eff. (TR) = 498 pF, supporting high-frequency ZVS/ZCS topologies in DC/AC inverters and resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage; suitable for 24 V and 36 V battery systems and 48 V bus architectures.
R_DS(on) max	4.5 mΩ @ V_GS = 10 V, I_D = 57 A - Enables <1 W conduction loss at 50 A, reducing heatsink requirements.
I_D continuous	95 A @ T_C = 25 °C - Supports high-power motor drive stages without parallel devices.
E_AS	85 mJ (low-energy test) / 167 mJ (high-energy test) - Confirmed unclamped inductive switching robustness for bridge-leg fault tolerance.
Q_g	45–68 nC - Gate charge range defines driver strength requirement; compatible with common 1–2 A peak gate drivers.
t_rr	21–22 ns - Fast reverse recovery minimizes switching loss and EMI in synchronous rectifier mode.
dV/dt rating	6.4 V/ns - High diode recovery dv/dt withstand ensures stability in hard-switched and high-dV/dt environments.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and 1.1 N·m screw torque rating. Thermal resistance R_θJC = 1.8 °C/W enables efficient heat transfer to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives gate drive signal; requires ≤20 V absolute max; 2.0 Ω internal gate resistance limits ringing.
D (Drain)	High-side power output	Connected to heatsink tab; carries full load current and must be electrically isolated if heatsink is grounded.
S (Source)	Power return/reference node	Serves as local ground reference for gate drive; source inductance directly impacts switching speed and oscillation risk.

Key Features

Feature	Design Value
Enhanced body diode dV/dt and dI/dt capability	6.4 V/ns dv/dt and 860 A/µs di/dt rating enable stable operation in high-speed synchronous rectification without snubbers.
Fully characterized avalanche SOA	Single-pulse E_AS validated up to 167 mJ under defined L, R_G, and I_AS conditions - supports design margin in inductive fault events.
Low effective output capacitance	C_oss eff. (TR) = 498 pF - Reduces turn-off energy and improves zero-voltage switching performance in resonant topologies.
Lead-free and RoHS-compliant	Halogen-free construction meets IPC-J-STD-020 moisture sensitivity level 1 - supports lead-free reflow and long-term reliability.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: H-bridge control of 24–36 V DC motors in power tools and industrial actuators.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in full-bridge topology; handles bidirectional current and regenerative braking.

Use Value: 3.6 mΩ R_DS(on) reduces I²R losses during high-current stall conditions, improving thermal headroom and efficiency.

Use Scenario: Six-step commutation in 3-phase BLDC inverters for e-bikes and HVAC fans.

IC Role / Device Role / Timing Role: Power switch in each leg; operates at 10–20 kHz PWM with fast turn-off (t_f = 19 ns) to minimize dead-time loss.

Use Value: Low Q_gd/Q_g ratio and soft-recovery body diode suppress shoot-through risk and reduce EMI during phase transitions.

Synchronous Rectification

OR-ing Power Switch

Use Scenario: Secondary-side switching in 48 V input DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Active replacement for Schottky diode; driven synchronously with primary-side controller timing.

Use Value: 0.9–1.3 V V_SD forward drop at 57 A cuts conduction loss by >50% vs. 45 V Schottky, improving full-load efficiency.

Use Scenario: Redundant 24 V power supply OR-ing in industrial PLC backplanes and medical equipment.

IC Role / Device Role / Timing Role: Unidirectional power path switch; blocks reverse current while conducting forward with minimal voltage drop.

Use Value: 40 V V_DSS and 95 A I_D support hot-swap insertion and transient overload without latch-up or thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP90NF03L	R_DS(on) = 4.5 mΩ max @ 10 V, but lower V_DSS = 30 V; higher Q_g = 85 nC.	Limited to ≤24 V systems; slower switching increases loss in >100 kHz designs.	Acceptable only in 24 V brushed motor drives where voltage margin and switching frequency are constrained.
IXTP40N40P	V_DSS = 400 V, R_DS(on) = 100 mΩ - orders-of-magnitude higher on-resistance and gate charge.	Designed for high-voltage flyback/LLC, not low-voltage high-current switching.	Not functionally substitutable: unsuitable for 40 V, 95 A applications due to excessive conduction and switching loss.

Compared with STP90NF03L and IXTP40N40P, the IRF40B207 uniquely balances 40 V rating, sub-5 mΩ R_DS(on), and 68 nC gate charge-enabling high-efficiency, high-current switching in battery-powered and bridge-based topologies where both voltage headroom and thermal performance are critical.

Availability

IRF40B207 is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across automotive aftermarket, industrial automation, and renewable energy power conversion programs.

Supply support for IRF40B207 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

The StrongIRFET™ product line delivers high-current, low-R_DS(on) MOSFETs engineered specifically for demanding motor control, power supply, and industrial switching applications where ruggedness and efficiency are non-negotiable.

FAQ

What is the maximum junction temperature and thermal resistance of IRF40B207?

The IRF40B207 has a maximum operating junction temperature of +175 °C and a junction-to-case thermal resistance (R_θJC) of 1.8 °C/W. This value is measured at approximately 90 °C junction temperature and assumes proper mechanical mounting with 1.1 N·m screw torque on a flat, greased heatsink surface.

Can IRF40B207 be used in synchronous rectification without external diode clamping?

Yes-the device's body diode is fully characterized for reverse recovery (t_rr = 21–22 ns, Q_rr = 13–15 nC) and rated for 6.4 V/ns dv/dt, enabling direct use in synchronous rectifier configurations without external clamping diodes in properly designed gate-drive circuits.

Is IRF40B207 suitable for 48 V battery systems?

No-its 40 V V_DSS rating provides insufficient voltage margin for 48 V nominal systems, which commonly experience transients exceeding 60 V. It is appropriate for 24 V and 36 V battery architectures where worst-case bus voltage remains ≤40 V.

What gate drive voltage is required to achieve specified R_DS(on)?

A minimum V_GS of 10 V is required to achieve the datasheet-specified R_DS(on) of 3.6 mΩ (typ.) and 4.5 mΩ (max). At V_GS = 6.0 V, R_DS(on) rises to 5.4 mΩ max, increasing conduction loss significantly in high-current operation.

IRF40B207 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 95A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 57A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2110 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF40B207 FAQ

1.How can I place an order for IRF40B207 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF40B207 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF40B207 reliable?

The price and inventory of IRF40B207 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF40B207 is usually 5 days.

3.What payment methods are accepted for IRF40B207?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF40B207 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF40B207?

IRF40B207 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF40B207 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF40B207?

For technical support, including IRF40B207 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF40B207 requirements.

6.How does Aetrix verify that IRF40B207 is sourced from the original manufacturer or authorized distributors?

All IRF40B207 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF40B207 meets industry standards.

7.What is the process for return or replacement of IRF40B207?

All IRF40B207 units undergo pre-shipment inspection (PSI). If there is an issue with IRF40B207, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF40B207 part is unused and in its original packaging.

Return procedure for IRF40B207:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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