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Infineon Technologies IRF4104PBF
- Part No.:
- IRF4104PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF4104PBF.pdf
- Description:
- MOSFET N-CH 40V 75A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:888
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Product details
Overview
IRF4104PBF from Infineon Technologies is a 40V, 75A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring 5.5mΩ RDS(on) at VGS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche energy up to 120mJ - deployed in high-current DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRF4104PBF datasheet, IRF4104PBF pinout, IRF4104PBF application, or IRF4104PBF equivalent, key selection criteria include verified RDS(on), gate charge (Qg = 68–100nC), thermal resistance (RθJC = 1.05°C/W), body diode recovery (trr = 23–35ns), and avalanche capability under unclamped inductive switching.
Technical Context
This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining robust switching performance. Its low RDS(on) and fast turn-on/turn-off times (td(on) = 16ns, tf = 77ns) support high-frequency synchronous rectification in buck converters operating above 200kHz.
The integrated body diode exhibits low forward voltage (VSD ≤ 1.3V at 75A) and controlled reverse recovery (Qrr = 6.8–10nC), enabling reliable operation in hard-switched topologies without external snubbers. Repetitive avalanche rating is validated per JEDEC JESD24-11 test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum blocking voltage before avalanche onset; defines safe operation in 24V bus systems with transient margin. |
| RDS(on) | 5.5mΩ max @ VGS = 10V - Enables <1.5W conduction loss at 75A, critical for thermally constrained PCB layouts. |
| ID (TC = 25°C) | 75A - Continuous drain current limited by silicon; requires heatsinking to sustain at full rating. |
| Qg | 68–100nC - Gate drive energy requirement determines driver sizing and switching loss trade-offs at >100kHz. |
| trr | 23–35ns - Fast body diode recovery minimizes shoot-through risk and EMI in bridge configurations. |
| EAS | 120mJ - Single-pulse avalanche energy rating supports unclamped inductive load interruption without failure. |
| RθJC | 1.05°C/W - Junction-to-case thermal resistance enables direct mounting to heatsink with predictable thermal rise. |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration. Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature: 300°C for 10 seconds at 1.6mm from case.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Electrically connected to metal tab; must be electrically isolated from chassis unless system ground reference permits. |
| Source | Reference node for gate control and current return | Serves as common return for gate drive and load current; low-inductance layout essential for stable switching. |
| Gate | Control terminal for channel modulation | High-impedance input requiring <100nC charge; sensitive to ringing - needs local RC snubber or gate resistor ≥6.8Ω. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 4.3mΩ typical at 10V gate drive - reduces I²R losses by >30% vs. legacy 40V MOSFETs in high-current power stages. |
| 175°C rated junction | Extended thermal margin allows sustained operation in sealed enclosures or high-ambient industrial environments. |
| Repetitive avalanche rated | Validated per JEDEC JESD24-11 - supports robustness in motor drive fault conditions without derating. |
| Fast body diode | trr = 23ns typical - enables efficient freewheeling in synchronous buck and H-bridge inverters without external Schottky. |
| Lead-free construction | RoHS-compliant Pb-free plating - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility. |
Applications
| DC-DC Buck Converter | Brushless DC Motor Drive |
|---|---|
Use Scenario: High-efficiency 24V-to-5V/12V point-of-load converter delivering up to 90A continuous output. IC Role / Device Role / Timing Role: Synchronous rectifier switch in low-side position, operating at 300kHz with forced PWM mode. Use Value: 5.5mΩ RDS(on) limits conduction loss to <3W at full load, reducing heatsink size by 40% versus 8mΩ alternatives. | Use Scenario: 3-phase inverter stage for 750W BLDC fan controller in HVAC systems. IC Role / Device Role / Timing Role: Low-side switching element in each leg, commutated at 16kHz with 60° trapezoidal excitation. Use Value: 120mJ avalanche rating withstands back-EMF transients during abrupt stop/start cycles without clamping diodes. |
| Industrial Power Supply | Automotive Auxiliary Power Module |
Use Scenario: 48V input telecom rectifier with active OR-ing and hot-swap capability. IC Role / Device Role / Timing Role: Main pass transistor in ideal diode configuration, controlled via external gate driver. Use Value: Body diode VSD ≤ 1.3V ensures <1.5W forward drop at 75A, minimizing thermal stress during inrush and fault conditions. | Use Scenario: 12V battery-powered auxiliary DC-DC module supplying infotainment and ADAS sensors. IC Role / Device Role / Timing Role: High-current switch in load-dump protected power distribution unit (PDU). Use Value: 175°C TJ rating maintains reliability across -40°C to +125°C ambient with no derating required. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF40 | RDS(on) = 7.5mΩ (higher), Qg = 120nC (higher), TJmax = 175°C (same) | Higher conduction and switching loss; suitable only where gate drive strength exceeds 2A peak. | Select if cost-sensitive and thermal margin allows 25% higher RDS(on) penalty. |
| IXTH75N40L2 | RDS(on) = 5.0mΩ (lower), Qg = 145nC (higher), TO-247 package (larger footprint) | Lower on-resistance but slower switching; requires larger PCB area and stronger gate driver. | Select when lowest possible conduction loss dominates over layout space and driver capability. |
Compared with STP75NF40 and IXTH75N40L2, IRF4104PBF delivers optimal balance of low RDS(on), moderate Qg, and TO-220AB form factor - making it preferred for space-constrained, medium-frequency power stages where thermal and gate drive resources are balanced.
Availability
IRF4104PBF is available at Aetrix Electronics and suitable for DC-DC buck converters, brushless DC motor drives, industrial power supplies, and automotive auxiliary power modules requiring stable component supply and long-term manufacturability.
Supply support for IRF4104PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The IRF4104PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-reliability switching in industrial and transportation power systems where thermal robustness and avalanche tolerance are mandatory.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRF4104PBF supports 120A continuous drain current at TC = 100°C per Figure 9 in the official datasheet, confirmed by thermal derating curves and silicon-limited current rating. This value assumes proper heatsinking and ambient airflow meeting RθJA = 40°C/W (PCB mount) conditions.
Is the TO-220AB package electrically isolated?
No - the metal tab (Drain) is internally connected to the drain terminal and is not electrically isolated from the die. A mica or silicone insulator pad and shoulder washer must be used when mounting to a grounded heatsink to prevent short circuits.
Does IRF4104PBF require a gate resistor for stability?
Yes - a series gate resistor (6.8Ω typical) is required to dampen parasitic oscillation caused by gate-drain capacitance (Crss = 380pF) and PCB trace inductance. Without it, ringing can exceed VGS(th) and cause unintended turn-on or device failure.
Can IRF4104PBF replace IRF4104SPbF in a design?
Yes - IRF4104PBF and IRF4104SPbF share identical electrical specifications and TO-220AB mechanical dimensions; the "S" suffix denotes tape-and-reel packaging, while "PBF" indicates tube packaging. No layout or thermal changes are needed for substitution.
IRF4104PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF4104PBF FAQ
1.How can I place an order for IRF4104PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF4104PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF4104PBF reliable?
The price and inventory of IRF4104PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF4104PBF is usually 5 days.
3.What payment methods are accepted for IRF4104PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF4104PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF4104PBF?
IRF4104PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF4104PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF4104PBF?
For technical support, including IRF4104PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF4104PBF requirements.
6.How does Aetrix verify that IRF4104PBF is sourced from the original manufacturer or authorized distributors?
All IRF4104PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF4104PBF meets industry standards.
7.What is the process for return or replacement of IRF4104PBF?
All IRF4104PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF4104PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF4104PBF part is unused and in its original packaging.
Return procedure for IRF4104PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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