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Vishay Siliconix IRF510PBF-BE3
- Part No.:
- IRF510PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF510PBF-BE3.pdf
- Description:
- MOSFET N-CH 100V 5.6A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,464
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Product details
Overview
IRF510PBF-BE3 from Vishay Siliconix is a 100 V, 5.6 A N-channel power MOSFET in TO-220AB package, featuring 0.54 Ω RDS(on) at VGS = 10 V, 8.3 nC total gate charge, and 175 °C maximum junction temperature - designed for DC-DC converters, motor drivers, and switch-mode power supplies.
For engineers reviewing the IRF510PBF-BE3 datasheet, IRF510PBF-BE3 pinout, IRF510PBF-BE3 application, or IRF510PBF-BE3 equivalent, this page delivers verified specifications, thermal performance data, avalanche capability, body diode recovery metrics, and real-world switching timing (td(on) = 6.9 ns, tf = 9.4 ns) to support robust power stage design and layout decisions.
Technical Context
This N-channel enhancement-mode MOSFET uses planar silicon technology optimized for high-voltage switching with low conduction loss and fast turn-on/turn-off. Its 3.5 °C/W junction-to-case thermal resistance enables reliable operation up to 43 W at TC = 25 °C, while the integrated body diode supports freewheeling in inductive loads.
The device is rated for repetitive avalanche energy (EAR = 4.3 mJ) and unclamped inductive switching (EAS = 75 mJ), with dV/dt immunity of 5.5 V/ns and gate threshold voltage (VGS(th)) spanning 2.0–4.0 V - ensuring stable turn-on across temperature and drive variations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input rails up to 80 V DC with margin for transients in industrial SMPS |
| RDS(on) @ VGS = 10 V | 0.54 Ω - limits conduction loss to ≤17.3 W at 5.6 A continuous drain current |
| Qg | 8.3 nC - determines gate drive power requirement and switching speed with 24 Ω resistor |
| ID (TC = 25 °C) | 5.6 A - defines maximum continuous output current with heatsink at ambient conditions |
| EAS | 75 mJ - enables safe operation during single-pulse inductive load turn-off without snubber |
| TJ(max) | +175 °C - allows sustained operation in high-temperature environments like enclosed motor drives |
| trr / Qrr | 100–200 ns / 0.44–0.88 μC - quantifies body diode reverse recovery behavior critical for synchronous rectification |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 0.50 °C/W case-to-sink thermal resistance with greased interface, and 10 lbf·in mounting torque rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; 2.3 nC gate-source charge enables fast turn-on with minimal driver stress |
| D (Drain) | High-side power terminal | Connected to package tab; electrically tied to heat sink - requires isolation if heatsink is grounded |
| S (Source) | Power return and reference | Serves as local ground reference for gate drive; internal source inductance (LS = 7.5 nH) affects high-speed switching ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 5.6 A repetitive avalanche current (IAR) - eliminates need for external clamping in flyback or boost converters |
| Dynamic dV/dt rating | 5.5 V/ns immunity - prevents false turn-on during high dv/dt transients in half-bridge configurations |
| Fast switching | 6.9 ns turn-on delay + 9.4 ns fall time - reduces switching losses in 100–500 kHz power stages |
| 175 °C operating temperature | Enables use in sealed enclosures or high-ambient environments without derating below 100 °C case temperature |
| Low RDS(on) × Qg figure-of-merit | 0.54 Ω × 8.3 nC = 4.48 Ω·nC - balances conduction and switching loss for medium-frequency hard-switched topologies |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulator supplying 5–24 V to microcontrollers and sensors from 12–48 V battery or bus. IC Role / Device Role / Timing Role: High-side switching element controlling duty cycle and regulating output via PWM at 200–500 kHz. Use Value: 0.54 Ω RDS(on) minimizes I²R loss at 5 A load; 175 °C rating ensures reliability under sustained full-load conditions. | Use Scenario: H-bridge or half-bridge driver for 12–36 V brushed motors in industrial actuators or robotics. IC Role / Device Role / Timing Role: Low-side or high-side power switch enabling bidirectional control and dynamic braking. Use Value: Repetitive avalanche rating handles inductive kickback during rapid PWM reversal; body diode trr < 200 ns reduces shoot-through risk. |
| AC-DC Flyback Supply | LED Constant-Current Driver |
Use Scenario: Isolated offline flyback converter delivering 12–24 V at ≤30 W for industrial control systems. IC Role / Device Role / Timing Role: Primary-side power switch operating in discontinuous conduction mode (DCM) at 65–132 kHz. Use Value: 75 mJ single-pulse avalanche energy absorbs leakage inductance spikes without snubber; TO-220AB simplifies heatsinking on PCB. | Use Scenario: Constant-current LED driver for signage or architectural lighting using buck or boost topology. IC Role / Device Role / Timing Role: Series-pass switch modulating average LED current via high-frequency PWM dimming. Use Value: Low gate charge (8.3 nC) enables efficient driving from low-power MCU GPIO; 100 V VDS accommodates string voltages up to 80 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V VDS, 55 A ID, 0.018 Ω RDS(on), logic-level gate (VGS(th) = 1–2.5 V) | Higher current, lower voltage rating - unsuitable for >65 V input rails but better for high-current 12 V systems | Select when drive voltage is ≤5 V and load current exceeds 10 A; not drop-in due to different voltage class and pinout |
| FQP50N06L | 60 V VDS, 50 A ID, 0.022 Ω RDS(on), logic-level compatible | Optimized for 5 V microcontroller drive and high-efficiency low-voltage switching - lacks 100 V margin and avalanche rating | Prefer for battery-powered tools or automotive 12 V systems where 100 V rating is unnecessary and gate drive is constrained |
Compared with STP55NF06L and FQP50N06L, the IRF510PBF-BE3 provides higher voltage headroom (100 V), proven avalanche ruggedness, and industry-standard TO-220AB mechanical compatibility - making it the preferred choice for universal-input SMPS, industrial motor controls, and legacy designs requiring field-proven reliability at moderate power levels.
Availability
IRF510PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drivers, and AC-DC flyback supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant/halogen-free manufacturing.
Supply support for IRF510PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and industrial reliability.
The IRF510PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered for cost-effective, high-reliability switching in commercial and industrial power conversion - balancing low RDS(on), fast switching, and robust avalanche capability.
FAQ
What is the maximum continuous drain current for IRF510PBF-BE3 at 100 °C case temperature?
The IRF510PBF-BE3 supports 4.0 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within the 175 °C limit. At 25 °C case temperature, the rating rises to 5.6 A. Designers must verify heatsink performance to maintain safe operating area compliance.
Does IRF510PBF-BE3 have a built-in body diode, and what are its key parameters?
Yes, the IRF510PBF-BE3 integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key parameters include 5.6 A continuous source-drain current (IS), 20 A pulsed rating (ISM), 2.5 V forward voltage (VSD) at 5.6 A and 25 °C, and reverse recovery time (trr) of 100–200 ns. These values are critical for freewheeling path design in inductive switching applications.
Is IRF510PBF-BE3 suitable for logic-level gate drive?
No, the IRF510PBF-BE3 is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, and it requires 10 V gate drive to achieve specified RDS(on) = 0.54 Ω. Driving it with 3.3 V or 5 V will result in significantly higher on-resistance and excessive conduction loss. A dedicated gate driver or level-shifter is recommended for microcontroller-based control.
What is the avalanche energy rating of IRF510PBF-BE3, and how is it tested?
The IRF510PBF-BE3 is rated for 75 mJ single-pulse avalanche energy (EAS) under test conditions of VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 Ω, and IAS = 5.6 A. It also supports 4.3 mJ repetitive avalanche energy (EAR). These ratings validate its ability to absorb inductive energy without failure during unclamped inductive switching events.
How does the TO-220AB package of IRF510PBF-BE3 affect thermal management?
The TO-220AB package of IRF510PBF-BE3 provides a junction-to-case thermal resistance (RthJC) of 3.5 °C/W and case-to-sink resistance (RthCS) of 0.50 °C/W with greased interface. Its isolated drain tab allows direct mounting to a heatsink while maintaining electrical isolation. Proper mounting torque (10 lbf·in) and flat, clean surfaces are essential to minimize thermal impedance and prevent hot-spot formation.
IRF510PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 43W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF510PBF-BE3 FAQ
1.How can I place an order for IRF510PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF510PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF510PBF-BE3 reliable?
The price and inventory of IRF510PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF510PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRF510PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF510PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF510PBF-BE3?
IRF510PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF510PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF510PBF-BE3?
For technical support, including IRF510PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF510PBF-BE3 requirements.
6.How does Aetrix verify that IRF510PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRF510PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF510PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRF510PBF-BE3?
All IRF510PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF510PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF510PBF-BE3 part is unused and in its original packaging.
Return procedure for IRF510PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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