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Vishay Siliconix IRF510STRRPBF
- Part No.:
- IRF510STRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF510STRRPBF.pdf
- Description:
- MOSFET N-CH 100V 5.6A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:1,497
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Product details
Overview
IRF510STRRPBF from Vishay Siliconix is a surface-mount N-channel power MOSFET rated for 100 V drain-source voltage, 5.6 A continuous drain current at 25 °C, and 0.54 Ω RDS(on) at VGS = 10 V. It operates up to 175 °C junction temperature and is designed for high-current DC-DC converters, motor drive half-bridges, and industrial power switching circuits.
For engineers reviewing the IRF510STRRPBF datasheet, IRF510STRRPBF pinout, IRF510STRRPBF application, or IRF510STRRPBF equivalent, key selection criteria include its D2PAK (TO-263) package thermal performance, repetitive avalanche rating (4.3 mJ), fast switching (6.9 ns turn-on delay), and PCB-mount power dissipation of 3.7 W - critical for compact, thermally constrained designs.
Technical Context
This third-generation power MOSFET uses planar V-groove silicon technology optimized for low conduction loss and robust unclamped inductive switching. Its gate charge profile (Qg = 8.3 nC, Qgd = 3.8 nC) supports efficient hard-switching operation with minimal Miller-induced shoot-through risk.
The device integrates a fast-recovery body diode (trr = 100–200 ns, Qrr = 0.44–0.88 μC) and features dynamic dv/dt immunity up to 5.5 V/ns - enabling reliable operation in noisy high-side switch configurations without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V bus systems with 2× safety margin against transients |
| RDS(on) @ VGS = 10 V | 0.54 Ω - limits conduction loss to ≤10.4 W at 4.5 A, enabling thermally viable SMT layout |
| ID Continuous @ TC = 25 °C | 5.6 A - delivers full-rated current with standard heatsinking on 1" FR-4 PCB |
| Qg | 8.3 nC - enables <100 ns total switching time with 10 Ω gate driver, reducing switching loss |
| EAS | 75 mJ - withstands single-pulse inductive energy without failure in flyback or motor freewheeling |
| TJ max | 175 °C - allows operation in sealed enclosures or high-ambient industrial environments |
| PD (PCB mount) | 3.7 W - defines maximum steady-state power with no external heatsink on standard PCB copper |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain thermal pad (pin 2), 3-terminal configuration, and JEDEC-compliant outline. Thermal pad must be soldered to ≥1"² copper area for rated power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | High-impedance control input; requires ≤10 Ω series resistance to suppress ringing during fast edge transitions |
| 2 (D) | Drain | Exposed metal thermal pad and primary high-voltage output node; electrically connected to case |
| 3 (S) | Source | Power return path and gate reference; internal source inductance (LS = 7.5 nH) affects di/dt capability |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 4.3 mJ per pulse - enables reliable operation in inductive load switching without external clamping |
| Dynamic dv/dt immunity | 5.5 V/ns - prevents false turn-on in high-noise half-bridge topologies with fast-rising VDS |
| Fast switching | 6.9 ns td(on), 9.4 ns tf - reduces total switching loss below 100 kHz in SMPS applications |
| 175 °C operating temperature | Rated junction temperature - supports extended-life operation in sealed industrial enclosures |
| RoHS-compliant, halogen-free | Meets IPC-1752A material declaration requirements for automotive and medical end equipment |
Applications
| DC-DC Converter Switch | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: Primary switch in 48 V input, 12 V output synchronous buck converter for telecom power supplies. IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer into output inductor; duty-cycle modulated at 250 kHz. Use Value: 0.54 Ω RDS(on) minimizes conduction loss at 5 A load; 8.3 nC Qg enables efficient gate drive with low-power controller. |
Use Scenario: H-bridge leg driving 24 V, 3 A brushed DC motor in automated valve actuator. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current; commutated at ≤20 kHz PWM frequency. Use Value: Repetitive avalanche rating absorbs inductive kickback during direction reversal; 175 °C rating ensures reliability in enclosed cabinet. |
| LED Constant-Current Driver | Industrial Power Sequencer |
|
Use Scenario: High-side switch regulating current through 10-series white LED string in streetlight driver. IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink; operated in saturation or active region depending on dimming method. Use Value: 100 V VDS accommodates 36 V LED string + 40 V transient margin; body diode reverse recovery (trr ≤ 200 ns) prevents cross-conduction. |
Use Scenario: Controlled power-up sequencing of FPGA, memory, and analog subsystems in programmable logic controller. IC Role / Device Role / Timing Role: Delayed-enable power switch triggered by microcontroller GPIO; held in linear mode during soft-start ramp. Use Value: 5.6 A ID supports 3 A peak inrush; 75 mJ EAS protects against capacitive load surge without external TVS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V VDS, 55 A ID, 0.014 Ω RDS(on), TO-220 package | Higher current, lower voltage rating; unsuitable for 48 V bus transients | Select only if system VDS stress remains <45 V and board space allows through-hole mounting |
| IRFZ44NPBF | 55 V VDS, 49 A ID, 0.028 Ω RDS(on), TO-220 package | Lower voltage rating, higher current; lacks repetitive avalanche rating | Use where cost-sensitive, non-avalanche applications require higher current density and through-hole assembly |
Compared with STP55NF06L and IRFZ44NPBF, IRF510STRRPBF offers superior voltage margin (100 V vs. ≤60 V), surface-mount compatibility, and guaranteed repetitive avalanche performance - making it the preferred choice for 48 V industrial switching where reliability under inductive stress is mandatory.
Availability
IRF510STRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and industrial power sequencers requiring stable component supply and long-term manufacturing continuity.
Supply support for IRF510STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF510S family delivers ruggedized, surface-mount power switching solutions optimized for high-efficiency, thermally constrained applications - emphasizing avalanche robustness, fast switching, and consistent parametric performance across temperature.
FAQ
What is the maximum continuous drain current for IRF510STRRPBF at 100 °C case temperature?
The IRF510STRRPBF supports 4.0 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package when mounted on standard PCB copper without additional heatsinking. Designers must verify junction temperature using RthJC = 3.5 °C/W and actual power dissipation to ensure operation stays within the 175 °C maximum junction limit. The IRF510STRRPBF maintains safe operation under these conditions when layout follows Vishay's recommended minimum pad guidelines.
Does IRF510STRRPBF have a built-in body diode, and what are its key parameters?
Yes, the IRF510STRRPBF integrates a monolithic body diode with typical forward voltage VSD = 2.5 V at IS = 5.6 A and TJ = 25 °C. Its reverse recovery time trr ranges from 100 to 200 ns, and reverse recovery charge Qrr is 0.44–0.88 μC under specified test conditions. These values enable use in freewheeling and synchronous rectification roles, though external Schottky diodes may be preferred for ultra-low-loss 100+ kHz applications. The IRF510STRRPBF body diode is rated for continuous 5.6 A and pulsed 20 A operation.
Can IRF510STRRPBF be used in avalanche mode, and what energy level is rated?
Yes, the IRF510STRRPBF is explicitly rated for repetitive avalanche operation with EAR = 4.3 mJ per pulse and single-pulse EAS = 75 mJ. These ratings are validated per the test conditions in Figure 12 (VDD = 25 V, IAS = 5.6 A, L = 4.8 mH). Operation in avalanche mode must respect pulse width and duty cycle limits defined by junction temperature rise - the IRF510STRRPBF data sheet specifies that repetitive rating is pulse-width limited by maximum junction temperature. Designers should avoid exceeding these validated boundaries without empirical testing.
What is the gate threshold voltage range for IRF510STRRPBF, and how does it affect drive requirements?
The IRF510STRRPBF has a gate-source threshold voltage VGS(th) ranging from 2.0 V to 4.0 V at ID = 250 μA. This standard-level threshold requires a minimum 5 V gate drive for partial enhancement and 10 V for full RDS(on) specification compliance. Gate leakage IGSS is ±100 nA at ±20 V, confirming low drive current demand. Because the IRF510STRRPBF is not a logic-level device, it must be driven by a dedicated gate driver or microcontroller with sufficient output voltage swing - typically 10–15 V - to ensure low conduction loss and thermal stability.
Is IRF510STRRPBF RoHS-compliant and halogen-free?
Yes, the IRF510STRRPBF is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and fulfilling Vishay's material categorization per document 99912. The "-GE3" suffix in related part numbers (e.g., SiHF510STRR-GE3) explicitly denotes this compliance. The IRF510STRRPBF uses matte tin plating and halogen-free molding compound, with full material declarations available in Vishay's IPC-1752A-compliant database. No exemptions apply, and the device is suitable for automotive, medical, and consumer applications requiring full environmental compliance.
IRF510STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 43W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF510STRRPBF FAQ
1.How can I place an order for IRF510STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF510STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF510STRRPBF reliable?
The price and inventory of IRF510STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF510STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF510STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF510STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF510STRRPBF?
IRF510STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF510STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF510STRRPBF?
For technical support, including IRF510STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF510STRRPBF requirements.
6.How does Aetrix verify that IRF510STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF510STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF510STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF510STRRPBF?
All IRF510STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF510STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF510STRRPBF part is unused and in its original packaging.
Return procedure for IRF510STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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