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Vishay Siliconix IRF520S
- Part No.:
- IRF520S
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF520S.pdf
- Description:
- MOSFET N-CH 100V 9.2A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,167
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Product details
Overview
IRF520S from Vishay Siliconix is a surface-mount N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, rated for 100 V drain-source voltage, 9.2 A continuous drain current at 25 °C, and 0.27 Ω RDS(on) at VGS = 10 V. It delivers fast switching, repetitive avalanche capability, and 175 °C operating junction temperature-commonly used in DC-DC converters, motor control circuits, and power supply high-side switches.
For engineers reviewing the IRF520S datasheet, IRF520S pinout, IRF520S application, or IRF520S equivalent, key selection considerations include its 16 nC total gate charge, 5.5 V/ns peak diode recovery dV/dt rating, thermal resistance of 2.5 °C/W (junction-to-case), PCB-mount power dissipation of 3.7 W, and compatibility with standard D2PAK footprint layouts for high-current industrial switching.
Technical Context
The IRF520S employs a third-generation silicon process optimized for low conduction loss and rugged unclamped inductive switching. Its dynamic dV/dt rating and 200 mJ single-pulse avalanche energy support reliable operation in inductive load switching without external snubbers.
Designed for surface-mount assembly with tape-and-reel packaging, it features halogen-free construction per IEC 61249-2-21 and RoHS-compliant lead-free terminations (IRF520SPbF). The D2PAK package provides low internal connection resistance and enables up to 2.0 W dissipation in typical PCB-mount configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage before breakdown; suitable for 48 V bus and 100 V DC input systems. |
| RDS(on) @ VGS = 10 V | 0.27 Ω - Conduction loss of ~2.3 W at 9.2 A; determines heat sink sizing and efficiency in linear or PWM operation. |
| Qg | 16 nC - Total gate charge required to fully switch; impacts driver strength requirements and switching loss at high frequency. |
| ID (continuous, TC = 25 °C) | 9.2 A - Max steady-state current with case held at 25 °C; derates to 6.5 A at 100 °C case temperature. |
| EAS | 200 mJ - Single-pulse avalanche energy rating; enables robustness against inductive kickback in relay/motor drive applications. |
| TJ max | 175 °C - Maximum junction temperature; allows operation in high-ambient environments with appropriate thermal design. |
| dV/dt (diode recovery) | 5.5 V/ns - Peak rate of voltage rise across body diode during reverse recovery; constrains layout parasitics to avoid false turn-on. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G, D, S); recommended pad layout per Vishay AN826 (0.420" × 0.355" thermal pad).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level gate drive; threshold voltage 2.0–4.0 V; requires <100 nA leakage current handling. |
| D (Drain) | High-side power output | Connected to exposed copper tab; carries full load current and serves as primary thermal path to PCB heatsink. |
| S (Source) | Reference/return node | Common return for gate drive and load current; forms source node for current sensing and feedback loops. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under unclamped inductive switching without external protection components. |
| Dynamic dV/dt rating | 5.5 V/ns ensures immunity to false triggering during fast voltage transients across the body diode. |
| Fast switching | Turn-on delay 8.8 ns + rise time 30 ns supports >100 kHz PWM operation with minimal switching loss. |
| 175 °C operating temperature | Permits use in sealed enclosures or high-ambient industrial environments without derating penalties. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and EU RoHS Directive for environmentally constrained end equipment. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: High-efficiency 12–48 V input to 3.3–12 V output conversion in industrial PLC power supplies. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch controlling duty cycle and regulating output voltage. Use Value: 0.27 Ω RDS(on) minimizes conduction loss at 5–9 A loads; 16 nC Qg enables efficient gate driving with low-power controllers. |
Use Scenario: H-bridge or half-bridge control of 24 V brushed motors in automated gate actuators and conveyor systems. IC Role / Device Role / Timing Role: Low-side or high-side power switch enabling bidirectional motor control and braking via PWM. Use Value: Repetitive avalanche rating absorbs back-EMF spikes during motor commutation; 200 mJ EAS eliminates need for external clamping diodes. |
| AC-DC SMPS Primary Switch | LED Constant-Current Driver |
|
Use Scenario: 100 W offline flyback or forward converter in medical auxiliary power supplies. IC Role / Device Role / Timing Role: Primary-side switching transistor handling 100 V DC link and delivering regulated isolated output. Use Value: 100 V VDS withstands reflected output voltage plus leakage spikes; 175 °C TJ max supports compact transformer-coupled designs. |
Use Scenario: Constant-current dimmable LED driver for street lighting and industrial high-bay fixtures. IC Role / Device Role / Timing Role: Series-pass switch modulating current through LED string using analog or PWM dimming. Use Value: Fast switching (tr = 30 ns) supports high-frequency dimming (>1 kHz) without audible noise; ease of paralleling allows current scaling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK50ZFP | 500 V VDS, 10 A ID, 0.55 Ω RDS(on), TO-220FP package | Higher voltage rating but higher on-resistance and through-hole mounting | Preferred where 400–500 V blocking is required; not drop-in due to package and pinout mismatch. |
| IRFZ44NPBF | 55 V VDS, 49 A ID, 0.028 Ω RDS(on), TO-220 package | Lower voltage rating, higher current, lower RDS(on), different thermal profile | Selected when 55 V systems demand ultra-low conduction loss; requires PCB redesign and thermal re-evaluation. |
Compared with STP10NK50ZFP and IRFZ44NPBF, the IRF520S offers optimal balance of 100 V rating, D2PAK surface-mount compatibility, and proven avalanche ruggedness for mid-power industrial switching-without over-specifying voltage or sacrificing thermal interface simplicity.
Availability
IRF520S is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and LED lighting systems requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF520S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The IRF520S belongs to Vishay's third-generation Power MOSFET family engineered for high-current, surface-mount switching in industrial power conversion and motor control-prioritizing avalanche robustness, thermal performance, and manufacturability.
FAQ
What is the maximum continuous drain current for the IRF520S at 100 °C case temperature?
The IRF520S supports 6.5 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This reflects linear derating from 9.2 A at 25 °C using a factor of 0.40 W/°C. Designers must verify PCB copper area and thermal vias to sustain this current without exceeding 175 °C junction temperature. The IRF520S datasheet (S16-1000-Rev. D) confirms this value in the "Absolute Maximum Ratings" section.
Does the IRF520S require a gate resistor for safe operation?
Yes-the IRF520S benefits from an external gate resistor (Rg) to control switching speed and suppress oscillation. Typical evaluation uses Rg = 18 Ω for switching time measurements (td(on) = 8.8 ns, tr = 30 ns). Without Rg, parasitic inductance may cause ringing or shoot-through in bridge configurations. The IRF520S gate threshold (2.0–4.0 V) and 16 nC Qg make it sensitive to drive impedance, so Rg selection must balance EMI and loss trade-offs.
Can the IRF520S be used in avalanche mode repeatedly?
Yes-the IRF520S is explicitly rated for repetitive avalanche operation, with 6.0 mJ specified EAR (repetitive avalanche energy) and validated test conditions (VDD = 25 V, IAS = 9.2 A, L = 3.5 mH, Rg = 25 Ω). This capability allows safe energy absorption during inductive turn-off without external snubbers. The IRF520S datasheet Figure 12 and notes confirm repetitive rating is pulse-width limited by junction temperature, not single-event failure.
What is the thermal resistance from junction to case (RthJC) for the IRF520S?
The IRF520S has a maximum junction-to-case (drain) thermal resistance of 2.5 °C/W, as specified in the "Thermal Resistance Ratings" table. This value assumes direct thermal contact between the exposed drain tab and a properly designed copper heatsink or PCB thermal pad. The IRF520S achieves this low RthJC via its D2PAK package structure, enabling 60 W power dissipation at TC = 25 °C-critical for high-current industrial switching applications.
Is the IRF520S compatible with logic-level gate drive?
No-the IRF520S is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but full enhancement requires VGS = 10 V to achieve rated RDS(on) = 0.27 Ω. Driving it with 3.3 V or 5 V logic will result in significantly higher on-resistance and excessive conduction loss. The IRF520S must be paired with a dedicated gate driver or level-shifting circuit when controlled by microcontrollers or logic ICs.
IRF520S Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF520S FAQ
1.How can I place an order for IRF520S through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF520S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF520S reliable?
The price and inventory of IRF520S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF520S is usually 5 days.
3.What payment methods are accepted for IRF520S?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF520S transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF520S?
IRF520S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF520S order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF520S?
For technical support, including IRF520S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF520S requirements.
6.How does Aetrix verify that IRF520S is sourced from the original manufacturer or authorized distributors?
All IRF520S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF520S meets industry standards.
7.What is the process for return or replacement of IRF520S?
All IRF520S units undergo pre-shipment inspection (PSI). If there is an issue with IRF520S, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF520S part is unused and in its original packaging.
Return procedure for IRF520S:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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