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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics IRF530

Name: IRF530
Brand: STMicroelectronics
SKU: IRF530
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF530

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF530.pdf

Description:: MOSFET N-CH 100V 14A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:4,542

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Product details

Overview

IRF530 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 100 V V_DS, 14 A continuous drain current at 25°C, and 0.115 Ω typical R_DS(on) at V_GS = 10 V. It features low gate charge (16 nC), avalanche ruggedness (70 mJ E_AS), and 175°C maximum junction temperature - used as primary switch in telecom DC-DC converters and solenoid drivers.

For engineers reviewing the IRF530 datasheet, IRF530 pinout, IRF530 application, or IRF530 equivalent, key selection criteria include its 100 V breakdown voltage, 0.115 Ω on-resistance at 7 A, 16 nC total gate charge, avalanche energy rating, and TO-220 thermal performance under high-current switching.

Technical Context

This device employs STMicroelectronics' STripFET™ II process to minimize input capacitance (C_iss = 458 pF) and gate charge, enabling high-frequency operation in isolated DC-DC topologies. Its unclamped inductive switching capability is validated per Figure 1 test circuit with 70 mJ single-pulse avalanche energy at T_j = 150°C.

The MOSFET supports fast switching with 16 ns turn-on delay and 25 ns rise time (V_DD = 50 V, I_D = 7 A, R_G = 4.7 Ω), and integrates a body diode with 92 ns reverse recovery time and 1.6 V forward voltage at 14 A source-drain current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V telecom bus designs with 2× safety margin
R_DS(on)	0.115 Ω typ. at V_GS = 10 V, I_D = 7 A - limits conduction loss to ≤11.3 W at 14 A
Q_g	16 nC - enables efficient gate drive with <100 mW driver power at 500 kHz
E_AS	70 mJ - withstands unclamped inductive energy without failure in relay/solenoid snubberless designs
T_j(max)	175°C - allows operation in automotive engine bay environments with derated power
C_iss	458 pF - reduces Miller effect, supporting >1 MHz switching in resonant converters

Pinout & Package

TO-220 package with vertical metal tab (drain-connected), standard 3-pin through-hole mounting, 2.5°C/W junction-to-case thermal resistance, and 300°C max soldering temperature tolerance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level gate drive; 16 nC Q_g enables fast turn-on with minimal driver stress
2 (Drain)	High-side power terminal	Connected to heatsink via metal tab; carries full load current and dissipates heat directly to case
3 (Source)	Reference node	Common return path for gate drive and load current; defines V_GS reference for control loop stability

Key Features

Feature	Design Value
Avalanche ruggedness	100% tested to 70 mJ single-pulse energy - eliminates need for external clamping in inductive load circuits
Low gate charge	16 nC total gate charge - reduces driver power loss and enables higher PWM frequency without gate heating
High current capability	14 A continuous at 25°C, 10 A at 100°C - supports high-power solenoid and motor control without parallel devices
STripFET™ II process	458 pF C_iss, 29 pF C_rss - minimizes Miller feedback, improving noise immunity and switching controllability

Applications

Telecom DC-DC Converters

Solenoid & Relay Drivers

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated flyback converter for base station power supplies.

IC Role / Device Role / Timing Role: High-voltage, high-frequency power switch handling 14 A peak current with 16 ns turn-on delay.

Use Value: 0.115 Ω R_DS(on) and 16 nC Q_g enable >92% efficiency at 300 kHz switching while maintaining thermal margin.

Use Scenario: Direct-drive interface between microcontroller GPIO and 24 V/1 A industrial solenoid valve.

IC Role / Device Role / Timing Role: Low-side switching element with integrated avalanche-rated body diode for inductive kickback suppression.

Use Value: 70 mJ E_AS rating eliminates external flyback diode, reducing BOM count and PCB area.

Automotive Lamp Drivers

Audio Amplifier Output Stage

Use Scenario: Headlamp or fog lamp switch in 12 V vehicle electrical system with PWM dimming.

IC Role / Device Role / Timing Role: High-current, thermally robust N-channel switch operating up to 175°C ambient under hood.

Use Value: 175°C T_j(max) and 10 A continuous rating at 100°C case temperature ensure reliability in sealed headlamp housings.

Use Scenario: Output stage in Class AB audio amplifier delivering 20 W into 8 Ω load.

IC Role / Device Role / Timing Role: Linear-mode power switch with low R_DS(on) and stable transconductance (7 S typ.) across bias range.

Use Value: 7 S forward transconductance and 0.115 Ω on-resistance reduce distortion and thermal drift in analog output stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44N	R_DS(on) = 0.028 Ω (lower), V_DS = 55 V (lower), Q_g = 67 nC (higher)	Better for 24–48 V low-voltage, high-current motor drives; unsuitable for 100 V bus protection	Select when lower conduction loss dominates over voltage rating and gate drive power
STP16NF10	R_DS(on) = 0.12 Ω (similar), V_DS = 100 V (same), Q_g = 14 nC (slightly lower)	Same voltage/current class but optimized for faster switching in SMPS with reduced C_rss	Prefer for new designs targeting <500 kHz operation where gate charge reduction improves efficiency

Compared with IRF530, IRFZ44N offers lower on-resistance but sacrifices voltage headroom and increases gate drive demand, while STP16NF10 matches voltage/current specs with marginal gate charge improvement - making it a drop-in upgrade for high-frequency SMPS where layout parasitics constrain switching speed.

Availability

IRF530 is available at Aetrix Electronics and suitable for telecom DC-DC converters, automotive lamp drivers, and industrial solenoid control requiring stable component supply across extended production lifecycles.

Supply support for IRF530 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The STripFET™ power MOSFET product line targets high-efficiency, high-reliability switching applications - especially in telecom infrastructure, automotive electrification, and industrial automation where ruggedness and thermal performance are critical.

FAQ

Is IRF530 logic-level compatible?

No, IRF530 is not a logic-level MOSFET. Its gate threshold voltage ranges from 2 V to 4 V, but it requires ≥10 V V_GS to achieve specified R_DS(on) of 0.115 Ω. Driving it with 3.3 V or 5 V microcontroller outputs results in significantly higher on-resistance (>1 Ω) and excessive conduction loss.

Can IRF530 be used in linear (analog) mode?

Yes - its SOA curve supports linear operation up to 100 V × 14 A with proper heatsinking. The device exhibits stable transconductance (7 S typ.) and low thermal runaway risk due to positive temperature coefficient of R_DS(on), making it suitable for Class AB audio output stages and precision current regulators.

What is the maximum safe operating frequency for IRF530?

IRF530 is rated for reliable operation up to 500 kHz in hard-switched topologies when gate drive impedance is ≤4.7 Ω and thermal design maintains T_j < 150°C. Above this, switching losses dominate due to 25 ns rise time and 458 pF C_iss; resonant or soft-switching techniques extend usable range.

Does IRF530 require a gate resistor?

Yes - a series gate resistor (typically 4.7–22 Ω) is required to dampen ringing caused by gate-drain capacitance (C_rss = 29 pF) and PCB inductance. Omitting it risks oscillation, shoot-through in half-bridges, and accelerated gate oxide degradation during fast transitions.

IRF530 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 458 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

IRF530 FAQ

1.How can I place an order for IRF530 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF530 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF530 reliable?

The price and inventory of IRF530 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF530 is usually 5 days.

3.What payment methods are accepted for IRF530?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF530 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF530?

IRF530 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF530 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF530?

For technical support, including IRF530 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF530 requirements.

6.How does Aetrix verify that IRF530 is sourced from the original manufacturer or authorized distributors?

All IRF530 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF530 meets industry standards.

7.What is the process for return or replacement of IRF530?

All IRF530 units undergo pre-shipment inspection (PSI). If there is an issue with IRF530, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF530 part is unused and in its original packaging.

Return procedure for IRF530:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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