Vishay Siliconix IRF530S

Overview

IRF530S from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 100 V drain-source voltage, 14 A continuous drain current at 25 °C, and 0.16 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching, repetitive avalanche capability, and operates up to 175 °C junction temperature - used in DC-DC converters, motor drivers, and industrial power supplies.

For engineers reviewing the IRF530S datasheet, IRF530S pinout, IRF530S application, or IRF530S equivalent, key selection criteria include its 26 nC total gate charge, 5.5 nC gate-source charge, 11 nC gate-drain charge, 69 mJ single-pulse avalanche energy, and PCB-mount thermal resistance of 40 °C/W - critical for thermal design and switching loss estimation in high-current surface-mount power stages.

Technical Context

The IRF530S employs a third-generation silicon process optimized for low R_DS(on) and ruggedized avalanche performance. Its D2PAK package integrates a thermally efficient copper drain tab directly bonded to the die, enabling 88 W case-mounted power dissipation and supporting high-current operation without discrete heatsinks in many applications.

It features intrinsic body diode with 150–280 ns reverse recovery time and 0.85–1.7 μC Q_rr, making it suitable for synchronous rectification and freewheeling paths where controlled diode recovery is required. The device is specified for ±20 V gate drive and supports standard 10 V logic-level control.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab (Pin 2), 3-terminal configuration, and 1.7 °C/W junction-to-case thermal resistance. Mounting requires soldering the large drain pad to ≥1"² copper pour for thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP14NF10 and IXTP12N10P, the IRF530S offers superior thermal performance via D2PAK mounting, higher avalanche robustness, and lower on-resistance - making it the preferred choice for surface-mount, high-reliability power stages requiring sustained current and transient resilience.

Availability

IRF530S is available at Aetrix Electronics and suitable for DC-DC converters, motor controllers, and industrial LED drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRF530S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRF530S belongs to Vishay's third-generation power MOSFET family, engineered for high-current surface-mount power conversion where low R_DS(on), fast switching, and avalanche tolerance are essential in industrial and automotive auxiliary systems.

FAQ

What is the maximum continuous drain current for the IRF530S at 100 °C case temperature?

The IRF530S supports 10 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures junction temperature remains within the 175 °C limit. At this condition, conduction loss is approximately 1.6 W assuming R_DS(on) = 0.16 Ω, requiring careful PCB thermal design. The IRF530S maintains stable operation across this range due to its positive R_DS(on) temperature coefficient.

Does the IRF530S have a specified body diode reverse recovery time (t_rr)?

Yes, the IRF530S specifies t_rr = 150–280 ns under test conditions of T_J = 25 °C, I_F = 14 A, and di/dt = 100 A/μs. This value is measured using the intrinsic body diode and is critical for designing snubberless inductive switching circuits. The IRF530S body diode also exhibits Q_rr = 0.85–1.7 μC, directly impacting switching loss in synchronous rectifier or H-bridge freewheeling modes.

Is the IRF530S pin-compatible with other D2PAK N-channel MOSFETs like the IRF540S?

No documented pin-to-pin compatibility exists between the IRF530S and IRF540S. While both use the D2PAK (TO-263) package and share identical pinout (G-D-S), the IRF540S has different electrical characteristics - including 100 V V_DS, 33 A I_D, and 0.077 Ω R_DS(on). Substitution requires validation of gate drive strength, thermal margins, and avalanche energy requirements. The IRF530S remains distinct in its 14 A/0.16 Ω balance optimized for cost-sensitive medium-power applications.

What is the gate threshold voltage range for the IRF530S?

The IRF530S has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This confirms it is a standard-level MOSFET requiring ≥5 V for partial enhancement and ≥10 V for full saturation. The IRF530S does not qualify as a logic-level device; driving it with 3.3 V microcontroller outputs will result in incomplete turn-on and excessive conduction loss. Gate drive must ensure ≥10 V swing for optimal performance.

Can the IRF530S be used in avalanche mode for energy clamping?

Yes, the IRF530S is explicitly rated for repetitive avalanche operation with E_AR = 8.8 mJ per pulse and I_AR = 14 A. Its datasheet includes validated test conditions (V_DD = 25 V, L = 528 μH, R_g = 25 Ω) and thermal limits (pulse width limited by T_J(max)). This makes the IRF530S suitable for clamping inductive kickback in relay drivers or solenoid controls without external components - a key functional advantage over non-avalanche-rated MOSFETs.