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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

onsemi IRF540

Name: IRF540
Brand: onsemi
SKU: IRF540
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF540

Manufacturer:: onsemi

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF540.pdf

Description:: MOSFET N-CH 100V 28A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:2,116

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Product details

Overview

IRF540 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 100 V drain-source voltage, 22 A continuous drain current at 25°C, and 0.055 Ω typical R_DS(on) at V_GS = 10 V. It serves as a primary switching device in isolated DC-DC converters and motor control circuits requiring low gate charge (30 nC) and high dv/dt immunity (9 V/ns).

For engineers reviewing the IRF540 datasheet, IRF540 pinout, IRF540 application, or IRF540 equivalent, key selection criteria include its avalanche-rated ruggedness (220 mJ single-pulse), thermal resistance (1.76 °C/W junction-to-case), and diode recovery performance (100 ns trr, 7.5 A I_RRM) under hard-switching conditions.

Technical Context

The IRF540 employs ST's proprietary STripFET™ II process to minimize input capacitance (C_iss = 870 pF) and gate charge, enabling efficient operation in high-frequency (>100 kHz) hard-switched topologies. Its transconductance (g_fs = 20 S) and low threshold voltage (V_GS(th) = 2–4 V) support direct drive from logic-level controllers without gate drivers.

Designed for unclamped inductive switching, it features 100% avalanche testing and supports source-drain conduction with 1.3 V forward voltage at 22 A. Safe operating area (SOA) is defined up to 88 A pulsed drain current with di/dt ≤ 300 A/µs and T_j ≤ 175°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage in off-state; defines use in 48 V telecom and 24–48 V industrial bus systems.
R_DS(on)	0.055 Ω (typ) at V_GS = 10 V - Enables <1.3 W conduction loss at 22 A, critical for thermally constrained PCB layouts.
Q_g	30 nC - Low total gate charge reduces driver power demand and switching transition time in PWM stages.
E_AS	220 mJ - Avalanche energy rating ensures robustness during inductive turn-off transients without external snubbers.
dv/dt	9 V/ns - High immunity to parasitic turn-on in high-noise motor drive and UPS inverters.
C_iss	870 pF - Low input capacitance minimizes Miller effect, supporting stable gate control above 200 kHz switching.
T_j(max)	175 °C - Extended junction temperature enables operation in sealed enclosures or high-ambient environments.

Pinout & Package

IRF540 is housed in a standard through-hole TO-220 package with three leads: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain terminal and must be insulated when mounted to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, tied to high-side switching node	Electrically connected to metal tab; requires isolation washer or insulating pad when heatsink-mounted.
Source (Pin 1)	Reference node for gate drive and current return path	Serves as common reference for gate-source voltage; carries full load current back to ground or bus return.
Gate (Pin 2)	Control electrode for channel modulation	High-impedance input requiring <30 nC charge for full enhancement; sensitive to ESD and layout-induced ringing.

Key Features

Feature	Design Value
STripFET™ II process technology	Reduces C_iss and Q_g by >25% vs. first-generation MOSFETs, enabling higher frequency operation without efficiency penalty.
100% avalanche tested	Guarantees minimum 220 mJ single-pulse energy handling-no derating required for inductive load commutation.
Low R_DS(on) × Q_g figure of merit	0.055 Ω × 30 nC = 1.65 Ω·nC-optimized trade-off between conduction and switching losses in 50–200 kHz converters.
Enhanced diode reverse recovery	trr = 100 ns with 7.5 A peak reverse recovery current-reduces cross-conduction losses in synchronous rectification.

Applications

Telecom DC-DC Converters

Industrial Motor Drives

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated flyback or forward converter for base station power supplies.

IC Role / Device Role / Timing Role: High-side power switch operating at 100–200 kHz with zero-voltage switching assist.

Use Value: Low Q_g and R_DS(on) reduce driver losses and conduction heating, enabling compact heatsink design in space-constrained modules.

Use Scenario: Half-bridge high-side switch in 24 V brushless DC motor controller for factory automation actuators.

IC Role / Device Role / Timing Role: Fast-turning power switch controlling phase voltage with <115 ns total switching time (td(on)+tr+td(off)+tf).

Use Value: 9 V/ns dv/dt rating prevents false triggering from bus noise during PWM edge transitions in noisy factory environments.

Uninterruptible Power Supplies

DC Power Distribution Switches

Use Scenario: Inverter stage switch in line-interactive UPS delivering 1 kVA output with battery backup.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch supporting both inverting and freewheeling conduction via body diode.

Use Value: 1.3 V V_SD at 22 A and 100 ns trr enable efficient body-diode conduction during dead-time intervals without external Schottky.

Use Scenario: Hot-swap and inrush current limiting switch in 48 V server rack power distribution units.

IC Role / Device Role / Timing Role: Controlled turn-on switch with gate-driven slew rate limiting to cap inrush di/dt.

Use Value: 22 A continuous rating at 100°C case temperature supports sustained 30 A peak loads during server boot-up surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44N	R_DS(on) = 0.028 Ω (lower), Q_g = 67 nC (higher), V_DS = 55 V (lower)	Not suitable for 100 V bus applications; better for 24–36 V motor drives where lower R_DS(on) dominates efficiency.	Select when system voltage ≤ 48 V and conduction loss is priority over switching speed.
STP10NK60Z	V_DS = 600 V, R_DS(on) = 0.7 Ω, Q_g = 34 nC, superjunction architecture	Designed for PFC and SMPS primary side at 380 V DC link; unsuitable for low-voltage, high-current roles.	Choose only for universal-input offline converters-not for 48 V or 24 V systems.

Compared with IRFZ44N and STP10NK60Z, the IRF540 uniquely balances 100 V rating, 22 A current capability, and 30 nC gate charge-making it optimal for 48 V telecom and industrial DC-DC where both voltage margin and switching efficiency matter.

Availability

IRF540 is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial motor drives, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRF540 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog ICs for industrial, automotive, and consumer markets.

The IRF540 belongs to ST's legacy STripFET™ II power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in telecom and computing power supplies.

FAQ

Is the IRF540 RoHS-compliant?

Yes, the IRF540 manufactured by STMicroelectronics meets RoHS Directive 2011/65/EU requirements. Lead-free finish is applied to the TO-220 leads and tab, with compliant solderability verified per J-STD-002. No exemptions apply to this part number.

Can the IRF540 be used in linear mode (as a pass transistor)?

No-it is not characterized or guaranteed for linear (ohmic) operation. SOA curves in the datasheet cover only switching conditions. Linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and lack of safe operating area validation in that region.

What is the maximum recommended gate resistor value for driving the IRF540?

A gate resistor of 4.7 Ω is specified in the datasheet for switching time measurements. For practical designs, values between 2.2 Ω and 10 Ω balance switching speed and gate ringing suppression. Higher values increase turn-on delay and reduce dv/dt stress but raise switching losses.

Does the IRF540 require a gate driver IC, or can it be driven directly from a microcontroller?

Direct microcontroller drive is possible only if the MCU GPIO can source/sink ≥30 mA peak and withstand 10 V gate voltage. Most 3.3 V MCUs cannot fully enhance the device (V_GS(th) up to 4 V); a level-shifting gate driver is strongly recommended for reliable 10 V gate drive and fast switching.

IRF540 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 77mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF540 FAQ

1.How can I place an order for IRF540 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF540 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF540 reliable?

The price and inventory of IRF540 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540 is usually 5 days.

3.What payment methods are accepted for IRF540?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF540?

IRF540 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF540 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF540?

For technical support, including IRF540 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540 requirements.

6.How does Aetrix verify that IRF540 is sourced from the original manufacturer or authorized distributors?

All IRF540 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540 meets industry standards.

7.What is the process for return or replacement of IRF540?

All IRF540 units undergo pre-shipment inspection (PSI). If there is an issue with IRF540, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF540 part is unused and in its original packaging.

Return procedure for IRF540:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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